PD - 97335 IRFH7921PbF HEXFET® Power MOSFET Applications l l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications VDSS 30V RDS(on) max Qg 8.5mΩ@VGS = 10V 9.3nC Benefits l l l l l l l l Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering S S S D D G D D PQFN Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 30 V VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ± 20 ID @ TA = 25°C ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 34 IDM Pulsed Drain Current 120 PD @TA = 25°C Power Dissipation 15 c PD @TA = 70°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A W 3.1 2.0 g 0.025 -55 to + 150 W/°C °C Thermal Resistance Parameter f RθJC Junction-to-Case RθJA Junction-to-Ambient g Typ. Max. Units ––– 7.9 °C/W ––– 40 Notes through are on page 9 www.irf.com 1 07/15/08 IRFH7921PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage ∆ΒVDSS/∆TJ RDS(on) 30 ––– ––– Breakdown Voltage Temp. Coefficient ––– 0.02 ––– Static Drain-to-Source On-Resistance ––– 7.1 8.5 ––– 10.4 12.5 V V/°C Reference to 25°C, ID = 1mA mΩ VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Forward Transconductance 27 ––– ––– Total Gate Charge ––– 9.3 14 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.2 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.2 ––– Qgd Gate-to-Drain Charge ––– 3.2 ––– Qgodr ––– 2.7 ––– Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– 4.4 ––– Qoss Output Charge ––– 5.0 ––– nC RG td(on) Gate Resistance Turn-On Delay Time ––– ––– 1.4 12 2.4 ––– Ω tr Rise Time ––– 7.6 ––– td(off) Turn-Off Delay Time ––– 14 ––– tf Fall Time ––– 4.7 ––– Ciss Input Capacitance ––– 1210 ––– Coss Output Capacitance ––– 240 ––– Crss Reverse Transfer Capacitance ––– 120 ––– IGSS gfs Qg Conditions VGS = 0V, ID = 250µA µA nA S VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A e e VDS = VGS, ID = 25µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 12A VDS = 15V nC VGS = 4.5V ID = 12A See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ns ID = 12A RG=1.8Ω See Fig.15 VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units ––– 29 mJ ––– 12 A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD Min. Typ. Max. Units ––– ––– 3.9 A (Body Diode) Diode Forward Voltage ––– ––– 120 ––– ––– 1.0 V trr Reverse Recovery Time ––– 12 18 ns Qrr Reverse Recovery Charge ––– 11 17 nC ton Forward Turn-On Time 2 c Conditions MOSFET symbol D showing the integral reverse G p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V S e TJ = 25°C, IF = 12A, VDD = 15V di/dt = 300A/µs e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFH7921PbF 1000 ≤60µs PULSE WIDTH TOP Tj = 25°C ID, Drain-to-Source Current (A) 100 BOTTOM 10 ≤60µs PULSE WIDTH VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V Tj = 150°C ID, Drain-to-Source Current (A) 1000 TOP 100 1 0.1 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 10 1 2.3V 2.3V 0.1 0.01 0.1 1 10 0.1 100 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 1.6 100 TJ = 150°C 10 T J = 25°C 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 1 2 3 4 5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com ID = 15A 1.4 (Normalized) RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) 1 VGS = 10V 1.2 1.0 0.8 0.6 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRFH7921PbF 10000 5.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd VGS , Gate-to-Source Voltage (V) ID= 12A C, Capacitance (pF) Coss = Cds + Cgd Ciss 1000 Coss Crss VDS= 24V VDS= 15V 4.0 3.0 2.0 1.0 100 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 2 4 6 8 10 12 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100 T J = 150°C 10 T J = 25°C 1 100µsec 1msec 10 DC 1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10msec 1.6 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFH7921PbF 16 2.5 VGS(th) , Gate Threshold Voltage (V) 14 ID, Drain Current (A) 12 10 8 6 4 2 0 2.0 ID = 25µA 1.5 1.0 0.5 25 50 75 100 125 150 -75 -50 -25 T J , Junction Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 τJ 0.1 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 τ2 τ1 τ3 τ2 τ3 τ4 τ4 Ci= τi/Ri Ci= τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.01 0.001 1E-006 1E-005 0.0001 τi (sec) Ri (°C/W) τA τA 2.4768 0.000496 6.6412 0.014506 15.997 0.80399 14.892 34.4 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 20 120 ID = 15A 18 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH7921PbF 16 14 12 T J = 125°C 10 8 T J = 25°C 6 4 ID TOP 2.2A 3.1A BOTTOM 12A 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage V DS V GS L + V - DD IAS 20V 150 RD D.U.T. RG DRIVER D.U.T RG 125 Fig 13. Maximum Avalanche Energy vs. Drain Current 15V VDS 100 Starting T J , Junction Temperature (°C) + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 A 0.01Ω tp Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS I AS Fig 14b. Unclamped Inductive Waveforms 6 td(on) tr td(off) tf Fig 15b. Switching Time Waveforms www.irf.com IRFH7921PbF D.U.T Driver Gate Drive P.W. + - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit www.irf.com Fig 18. Gate Charge Waveform 7 IRFH7921PbF PQFN Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 DATE CODE XXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PART NUMBER XYWWX XXXXX MARKING CODE (Per Marking Spec.) PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code) TOP MARKING (LASER) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRFH7921PbF PQFN Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.39mH, RG = 25Ω, IAS = 12A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/08 www.irf.com 9