IXYS IXTH50P10

Advance Technical Information
Standard Power MOSFET
IXTH 50P10
P-Channel Enhancement Mode
Avalanche Rated
RDS(on)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
-100
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
-100
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
IDM
TC = 25°C, pulse width limited by TJ
IAR
-50
A
-200
A
TC = 25°C
-50
A
EAR
TC = 25°C
30
mJ
PD
TC = 25°C
300
W
-55 ... +150
°C
TJ
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
TL
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
VDSS
ID25
1.13/10 Nm/lb.in.
6
Weight
g
TO-247 AD
D (TAB)
G = Gate,
S = Source,
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
V GS = 0 V, ID = -250 µA
-100
VGS(th)
V DS = VGS, ID = -250 µA
-3.0
IGSS
V GS = ±20 VDC, VDS = 0
IDSS
V DS = 0.8 VDSS
V GS = 0 V
RDS(on)
V GS = -10 V, ID = 0.5 ID25
© 2002 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
V
-5.0
V
±100
nA
-25
-1
µA
mA
55
mΩ
D = Drain,
TAB = Drain
Features
• International standard package
JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
•
•
•
Symbol
= -100 V
= -50 A
Ω
= 55 mΩ
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
Applications
High side switching
•
•
•
•
Push-pull amplifiers
DC choppers
Automatic test equipment
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
•
High power density
98905 (2/02)
IXTH 50P10
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
V DS = -10 V; ID = ID25, pulse test
Ciss
16
S
4200
pF
1720
pF
Crss
750
pF
td(on)
46
ns
Coss
V GS = 0 V, VDS = -25 V, f = 1 MHz
8
tr
V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
39
ns
td(off)
RG = 4.7 Ω (External)
86
ns
38
ns
150
nC
36
nC
70
nC
tf
Qg(on)
Qgs
V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.42
RthJC
0.25
RthCS
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
V GS = 0
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr
IF = IS, di/dt = 100 A/µs, VR = -50 V
-50
A
-200
A
-3
V
180
TO-247 AD Outline
1
2
3
Terminals: 1 - Gate
3 - Source
Dim.
2 - Drain
Tab - Drain
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1