IXYS IXTP1R6N50P

Advance Technical Information
PolarHVTM
Power MOSFET
IXTP 1R6N50P
IXTY 1R6N50P
VDSS
ID25
RDS(on)
= 500
= 1.6
≤
6.5
V
A
Ω
N-Channel Enhancement Mode
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
1.6
2.5
A
A
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
1.6
5
75
A
mJ
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 50 Ω
10
V/ns
TC = 25°C
43
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
PD
Maximum Ratings
TO-252 (IXTY)
TL
1.6 mm (0.062 in.) from case for 10s
Maximum tab temperature for soldering
TO-252 package for 10s
Md
Mounting torque (TO-220)
Weight
TO-252
TO-220
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
TO-220 (IXTP)
g
g
Characteristic Values
Min. Typ.
Max.
3.0
TJ = 125°C
V
5.5
V
±100
nA
5
50
µA
µA
6.5
Ω
D = Drain
TAB = Drain
Features
z
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
500
(TAB)
D S
G = Gate
S = Source
z
0.8
4
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
(TAB)
1.13/10 Nm/lb.in.
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
S
G
TJ
TJM
Tstg
TAB
G
z
z
Easy to mount
Space savings
High power density
DS99441(09/05)
IXTP 1R6N50P
IXTY 1R6N50P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 20 V; ID = 0.5 ID25, pulse test
0.7
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
1.4
S
140
pF
20
pF
Crss
2.6
pF
td(on)
10
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25
16
ns
td(off)
RG = 20 Ω (External)
25
ns
16
ns
3.9
nC
1.4
nC
1.3
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
TO-252 AA Outline
Dim.
2.9 K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
1.6
A
ISM
Repetitive
2.5
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 1.6 A, -di/dt = 100 A/µs
VR = 100V
400
2.38
1.14
0.086
0.035
0.094
0.045
A2
b
0
0.64
0.13
0.89
0
0.025
0.005
0.035
b1
b2
0.76
5.21
1.14
5.46
0.030
0.205
0.045
0.215
c
c1
0.46
0.46
0.58
0.58
0.018
0.018
0.023
0.023
D
D1
5.97
4.32
6.22
5.21
0.235
0.170
0.245
0.205
E
E1
6.35
4.32
6.73
5.21
0.250
0.170
0.265
0.205
2.28 BSC
4.57 BSC
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
0.090 BSC
0.180 BSC
H
L
9.40
0.51
10.42
1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64
0.89
2.54
1.02
1.27
2.92
0.025
0.035
0.100
0.040
0.050
0.115
TO-220 Outline
ns
IXYS reserves the right to change limits, test conditions, and dimensions.
4,835,592
4,850,072
4,881,106
Max.
2.19
0.89
Pins: 1 - Gate
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
Inches
Min.
A
A1
e
e1
Source-Drain Diode
Millimeter
Min. Max.
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
2 - Drain
IXTP 1R6N50P
IXTY 1R6N50P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25ºC
1.6
2.7
VGS = 10V
1.4
8V
7V
2.1
I D - Amperes
I D - Amperes
1.2
VGS = 10V
2.4
8V
7V
1.0
0.8
6V
0.6
0.4
1.8
1.5
1.2
6V
0.9
0.6
0.2
0.3
5V
5V
0.0
0.0
0
2
4
6
8
10
0
12
3
6
9
V D S - Volts
18
21
24
27
30
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
@ 125ºC
3.00
1.6
2.75
VGS = 10V
1.4
R D S ( o n ) - Normalized
7V
1.2
I D - Amperes
15
V D S - Volts
Fig. 3. Output Characteristics
1.0
6V
0.8
0.6
0.4
VGS = 10V
2.50
2.25
2.00
I D = 1.6A
1.75
1.50
I D = 0.8A
1.25
1.00
5V
0.2
0.75
0.50
0.0
0
4
8
12
16
20
-50
24
-25
V D S - Volts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
Fig. 6. Drain Current vs. Case
Tem perature
0.5 ID25 Value vs. ID
1.8
3.0
2.8
VGS = 10V
1.6
TJ = 125∫ C
2.6
1.4
2.4
I D - Amperes
R D S ( o n ) - Normalized
12
2.2
2.0
1.8
1.6
1.4
TJ = 25∫ C
1.2
1.0
0.8
0.6
0.4
1.2
0.2
1.0
0.8
0.0
0
0.4
0.8
1.2
1.6
I D - Amperes
© 2005 IXYS All rights reserved
2
2.4
2.8
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTP 1R6N50P
IXTY 1R6N50P
Fig. 8. Transconductance
2.2
1.8
2.0
1.6
1.8
1.6
1.4
g f s - Siemens
I D - Amperes
Fig. 7. Input Adm ittance
2.0
1.2
1.0
TJ = 125∫ C
0.8
25∫ C
0.6
-40∫ C
1.4
1.2
TJ = -40∫ C
1.0
25∫ C
0.8
125∫ C
0.6
0.4
0.4
0.2
0.2
0.0
0.0
4
4.5
5
5.5
6
0
6.5
0.3
0.6
0.9
V G S - Volts
1.5
5.0
10
4.5
9
4.0
8
I D = 0.8A
7
I G = 10mA
3.5
3.0
TJ = 125∫ C
2.0
1.5
2.1
2.4
3
3.5
4
VDS = 250V
6
5
4
3
TJ = 25∫ C
1.0
2
0.5
1
0
0.0
0.5
0.6
0.7
0.8
0
0.9
0.5
1
V S D - Volts
1.5
2
2.5
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
10
1000
TJ = 150∫ C
f = 1MHz
R DS(on) Limit
C iss
I D - Amperes
Capacitance - picoFarads
1.8
Fig. 10. Gate Charge
VG S - Volts
I S - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
2.5
1.2
I D - Amperes
100
C oss
TC = 25∫ C
1
25µs
100µs
10
C rss
DC
1ms
10ms
0.1
1
0
5
10
15
20
25
30
35
10
40
100
V D S - Volts
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
1000