ETC JANTXV2N5153L

The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 27 October 2001.
INCH-POUND
MIL-PRF-19500/545D
27 July 2001
SUPERSEDING
MIL-PRF-19500/545C
21 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER
TYPES 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, AND 2N5153U3
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in
high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated
device type.
1.2 Physical dimensions. See figure 1 (similar to T0-205), figures 2, 3, and 4 (JANHC and JANKC), and
figure 5 (U3).
1.3 Maximum ratings.
Safe
operating
area
PT
TA = +25°C
PT
TC = +25°C
VCBO
VCEO
VEBO
IC
IC
(1)
Reverse
pulse (2)
energy
W
W
V dc
V dc
V dc
A dc
A dc
mj
2N5151, L
2N5153, L
1 (3)
1 (3)
11.8 (4)
11.8 (4)
100
100
80
80
5.5
5.5
2
2
10
10
15
15
See
figure 6
-65 to
+ 200
2N5151U3
2N5153U3
1.16 (5)
1.16 (5)
100 (6)
100 (6)
100
100
80
80
5.5
5.5
2
2
10
10
15
15
See
figure 6
-65 to
+ 200
Types
Tstg
and TJ
°C
(1) This value applies for Pw ≤ 8.3 ms, duty cycle ≤ 1 percent.
(2) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy
test circuit of figure 7.
(3) Derate linearly 5.7 mW/°C for TA > +25°C.
(4) Derate linearly 66.7 mW/°C for TC > +25°C.
(5) Derate linearly 6.67 mW/°C for TA > +25°C.
(6) Derate linearly 571 mW/°C for TC > +25°C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCCVAC, P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/545D
1.4 Primary electrical characteristics at TC = +25°C.
Limits
hFE2 (1)
|hfe|
VCE(sat)2 (1)
VCE(sat)2 (1)
Cobo
VCE = 5 V
VCE = 5 V
IC = 5 A dc
IC = 5 A dc
VCB = 10 V dc
IC = 2.5 A dc
IC = 500 mA dc
f = 10 MHz
IB = 500 mA dc
IB = 500 mA dc
IE = 0
f = 1 Mhz
V dc
V dc
2.2
2.2
1.5
1.5
2N5151
(2)
2N5153
(2)
2N5151
(2)
2N5153
(2)
30
90
90
70
200
200
6
7
Min
Max (TO-205)
Max (U3)
RθJA
RθJC
pF
°C/W
°C/W
250
250
175
150
15
1.75
(1) Pulsed (see 4.5.1)
(2) The limits specified apply to all package outlines unless otherwise stated.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in section 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
- Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750
- Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited
herein, the text of this specification takes precedence. Nothing in this document, however, supersedes applicable
laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/545D
Symbol
11
Dimensions
Inches
Millimeters
Min
Max
Min
Max
CD
0.305
0.335
7.75
8.51
CH
0.240
0.260
6.10
6.60
HD
0.335
0.370
8.51
9.40
LC
LD
0.200 TP
0.016
LL
LU
0.41
6
7
0.53
8, 9
0.48
8, 9
1.27
8, 9
See notes 8, 9, 12, 13
0.016
L1
L2
0.021
5.08 TP
Notes
0.019
0.041
0.050
0.250
Q
6.35
0.050
8, 9
1.27
6
TL
0.029
0.045
0.74
1.14
4, 5
TW
0.028
0.034
0.71
0.86
3
0.25
11
r
α
P
0.010
45° TP
0.100
45° TP
7
2.54
FIGURE 1. Physical dimensions (T0-205).
3
MIL-PRF-19500/545D
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of 0.011 (.28 mm).
4. TL measured from maximum HD.
5. Outline in this zone is not controlled.
6. CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane 0.054 + 0.001 - 0.000 (1.37 + 0.03 - 0.00 mm) below seating plane shall be within 0.007
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC
8. LU applied between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and
beyond LL minimum.
9. All three leads.
10. The collector shall be electrically and mechanically connected to the case.
11. r (radius) applies to both inside corners of tab.
12. In accordance with ANSI Y14.5M, diameters are equivalent to ∅x symbology.
13. For transistor types 2N5151 and 2N5153, LL is 0.5 (12.70 mm) minimum, and 0.75 (19.05 mm) maximum.
14. For transistor types 2N5151L and 2N5153L, LL is 1.5 (38.10 mm) minimum and 1.75 (44.45 mm) maximum.
15. Lead designation, depending on device type, shall be as follows:
Lead number
1
2
3
TO-205
Emitter
Base
Collector
FIGURE 1. Physical dimensions (T0-205) - continued.
4
MIL-PRF-19500/545D
Dimensions
Ltr
A
Inches
Millimeters
Min
Max
Min
Max
0.117
0.127
02.97
3.23
Notes
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Unless otherwise specified, tolerance is ± 0.005 (0.13 mm).
4. The physical characteristics of the die are;
Thickness: 0.008 (0.20 mm) to 0.012 (0.30 mm), tolerance is ± 0.005 (0.13 mm).
Top metal: Aluminum, 40,000 Å minimum, 50,000 Å nominal.
Back metal: Gold 2,500 Å minimum, 3,000 Å nominal.
Back side: Collector.
Bonding pad: B = 0.015 (0.38 mm) x 0.0072 (0.183).
E = 0.015 (0.38 mm) x 0.0060 (0.152).
FIGURE 2. JANHCA and JANKCA die dimensions.
5
MIL-PRF-19500/545D
Dimensions
Ltr
Inches
Min
A
Millimeters
Max
Min
0.1
Notes
Max
2.54
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Unless otherwise specified, tolerance is ±0.005 (0.13 mm).
4. The physical characteristics of the die are;
5. Thickness: 0.0078 (0.198 mm) nominal, tolerance is ±0.005 (0.13 mm).
Top metal: Aluminum, 25,000 Å minimum, 33,000 Å nominal.
Back metal: Gold 1,500 Å minimum, 2,500 Å nominal.
Back side: Collector.
Bonding pad: 0.012 (0.305 mm) min. x .030 (0.761 mm) minimum.
FIGURE 3. JANHCB and JANKCB die dimensions.
6
MIL-PRF-19500/545D
1.
2.
3.
4.
Chip size................................. 0.128 x 0.128 inches ±0.002 inches
Chip thickness.......................…0.010 ± 0.0015 inches nominal
Top metal.............................… Aluminum 30,000Å minimum, 33,000Å nominal
Back metal............................…A.Al/Ti/Ni/Ag15kÅ/2kÅ/7kÅ/7kÅmin.18kÅ/3kÅ/10kÅ/10kÅ nom.
B. Gold 2,500Å minimum, 3,000Å nominal
5. Backside..............................… Collector
6. Bonding pad........................… B = 0.052 x 0.012 inches, E = 0.084 x 0.012 inches
FIGURE 4. JANHC and JANKC C-version die dimensions.
7
MIL-PRF-19500/545D
Symbol
Dimensions
Inches
BL
BW
CH
LH
LW1
LW2
LL1
LL2
LS1
LS2
Q1
Q2
TERM 1
TERM 2
TERM 3
Min
0.395
0.291
0.1085
0.010
0.281
0.090
0.220
0.115
Millimeters
Max
0.405
0.301
0.1205
0.020
0.291
0.100
0.230
0.125
Min
10.04
7.40
2.76
0.25
7.14
2.29
5.59
2.93
0.150 BSC
0.075 BSC
Max
10.28
7.64
3.06
0.51
7.41
2.54
5.84
3.17
3.81 BSC
1.91 BSC
0.030
0.030
-----
0.762
0.762
-----
Drain
Gate
Source
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimensions and tolerances shall be in accordance with ANSI Y14.5M-1982.
4. Terminal 1 - collector, terminal 2 - base, terminal 3 – emitter.
SCHEMATIC
1
3
2
FIGURE 5. Physical dimensions and configuration for surface mount (U3).
8
MIL-PRF-19500/545D
3. REQUIREMENTS
3.1. General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2. Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list (QML)
before contract award (see 4.2 and 6.3).
3.3. Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4. Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and figure 1 (TO-205), figures 2, 3, and 4 for JANHC and JANKC, figure 5 for U3 herein.
3.4.1. Current density. Current density of internal conductors shall be as specified in MIL-PRF-19500.
3.4.2. Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5. Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.6. Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
3.7. Marking. Marking shall be in accordance with MIL-PRF-19500.
3.8. Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1. Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2. Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.2.1. JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
9
MIL-PRF-19500/545D
4.3. Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see table IV
of MIL-PRF-19500
JANS levels
JANTX and JANTXV levels
1a
1b
Not required
Required
Not required
Required for JANTXV only
2
Optional
Optional
3a
3b
3c
Required
Not applicable
Thermal response (see 4.5.3)
Required
Not applicable
Thermal response (see 4.5.3)
4
Required
Optional
5
Required
Not applicable
7a and 7b
Required
Required
8
Required
Not required
9
ICES1 and hFE2
Not applicable
10
48 hours minimum
48 hours minimum
11
ICES1 and hFE2; ∆ICES1 = 100 percent of
initial value or100 nA dc, whichever is
greater. ∆hFE2 = ± 20 percent.
ICES1 and hFE2
12
See 4.3.2
See 4.3.2
13
Subgroup 2 of table I herein;
∆ICES1 = 100 percent of initial value or
100 nA dc, whichever is greater.
∆hFE2 = ± 20 percent.
Subgroup 2 of table I herein;
∆ICES1 = 100 percent of initial value or
100 nA dc, whichever is greater.
∆hFE2 = ± 20 percent.
14a and 14b
Optional
Optional
15
Required
Not required
16
Required
Not required
4.3.1. Screening (JANHC and JANKC). Screening of JANC die shall be in accordance with MIL-PRF-19500.
Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements.
10
MIL-PRF-19500/545D
4.3.2. Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc TA = room ambient
as defined in the general requirements, paragraph 4.5 of MIL-STD-750. Power shall be applied to the device to
achieve a Junction temperature, TJ=175 °C minimum and a minimum PD = 75% of PT maximum rated as defined
in paragraph 1.3 herein.
4.4. Conformance inspection. Conformance inspection shall be as specified herein.
4.4.1. Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein.
4.4.2. Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa of MIL-PRF-19500 (JANS) and 4.4.2.1 herein. Electrical measurements (end-points)
shall be in accordance with group A, subgroup 2 herein. Delta measurements shall be in accordance with table II
herein. See 4.4.2.2 herein and table VIb of MIL-PRF-19500 for JAN, JANTX, and JANTXV group B testing.
Electrical measurements (end-points) requirements shall be in accordance with group A, subgroup 2 herein. Delta
measurements shall be in accordance with table II herein.
4.4.2.1. Group B inspection table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
B4
1037
VCB = 40 V dc ± 1 V.
B5
1027
VCB = 10 V dc; 96 hours with PT = PT (max) at TA = 25°C, adjust TA to give TJ =
+275°C minimum. Optionally the test may be performed for a minimum of 216 hours
with PT adjusted to achieve a TJ = +225°C minimum; sample size = 45, c = 0. In this
case the ambient temperature shall be adjusted such that a minimum 75 percent of
maximum rated PT (see1.3) is applied to the device under test.
(NOTE: If a failure occurs, resubmission shall be at the test conditions of the original
sample.)
B6
3131
see 4.5.2.
4.4.2.2. Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
Method
Conditions
1
1039
Steady-state life: Test condition B, 340 hours min., VCB = 10 - 30 V dc, Power shall be
applied to achieve TJ = +175°C minimum using a minimum of PD = 75 percent of
maximum rated PT as defined in 1.3. n = 45 devices, c = 0.
2
1039
The steady-state life test of step 1 shall be extended to 1,000 hrs for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production.
Group B step 2 shall not be required more than once for any single wafer lot. n = 45,
c = 0.
3
1032
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
11
MIL-PRF-19500/545D
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers
(or from each wafer in the lot) from each wafer lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to
the application of final lead finish.
4.4.3. Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein.
Subgroup
Method
Conditions
C2
2036
Test condition E, (not applicable for U3 packages).
C6
1037
VCB = 10 - 30 V dc, 6,000 cycles.
4.4.4. Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table IX of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with
table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein.
Method
Condition
Sampling plan
E1
1051
500 cycles
45 devices, c = 0
E2
1039
Condition A: 500 hours
45 devices, c = 0
Subgroup
E3
E4
Not applicable
3131
RθJC = 15°C/W maximum (TO-205) 22 devices, c = 0 (See 4.5.2)
RθJC = 1.75°C/W maximum (U3)
See 4.5.2
E5
22 devices, c = 0 (See 4.5.2)
Not applicable
4.5. Methods of inspection and test. Methods of inspection and test shall be as specified in the appropriate tables
and as follows.
4.5.1. Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of
MIL-STD-750.
12
MIL-PRF-19500/545D
4.5.2. Thermal resistance. Thermal resistance measurements shall be conducted in accordance with
method 3131 of MIL-STD-750. The following details shall apply:
a.
Collector current magnitude during power application shall be 500 mA minimum dc.
b.
Collector to emitter voltage magnitude shall be 10 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference temperature measuring point shall be within the range +25°C ≤ TR ≤ +35°C. The chosen
reference temperature shall be recorded before the test is started.
e.
Mounting arrangement shall be with heat sink to case.
f.
Maximum limit of RθJC shall be 15.0°C/W for (TO-205) and 1.75°C/W for (U3).
4.5.3. Thermal response (∆VBE measurements). The ∆VBE measurements shall be performed in accordance
with method 3131 of MIL-STD-750. The ∆VBE conditions (IH and VH) and maximum limit shall be derived by each
vendor. The chosen ∆VBE measurement and conditions for each device in the qualification lot shall be submitted in
the qualification report and a thermal response curve shall be plotted. The chosen ∆VBE shall be considered final
after the manufacturer has had the opportunity to test five consecutive lots. One-hundred percent safe operating
area (SOA) testing may be performed in lieu of thermal response testing herein provided that the appropriate
conditions of temperature, time, current, and voltage to achieve die attach integrity are approved by the qualifying
activity. The following parameter measurements shall apply:
a. IM measurement ......................................................................... 10 mA.
b. VCE measurement voltage ......................................................... 16 V (same as VH).
c. IH collector heating current ......................................................... 1 A minimum.
d. VH collector-emitter heating voltage ........................................... 16 V minimum.
e. tH heating time ............................................................................ 10 ms.
f. tMD measurement delay time ...................................................... 50 µs.
g. tSW sample window time ............................................................ 10 µs maximum.
13
MIL-PRF-19500/545D
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 1 2/
Visual and mechanical 3/
examination
2071
n = 45 devices, c = 0
Solderability 3/, 4/
2026
n = 15 leads, c = 0
Resistance to solvents
3/, 4/, 5/
1022
n = 15 devices, c = 0
Temp cycling 3/, 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Heremetic seal 4/
Fine leak
Gross leak
1071
n = 22 devices, c = 0
Electrical measurements
4/
Bond strength 3/, 4/
Group A, subgroup 2
2037
Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Breakdown voltage,
collector to emitter
3011
Bias condition D, IC = 100 mA
dc; IB = 0, pulsed (see 4.5.1)
V(BR)CEO
Collector to emitter cutoff
current
3041
Bias condition C, VCE = 60 V dc;
VBE = 0
ICES1
1.0
µA dc
Collector to emitter cutoff
current
3041
Bias condition C, VCE = 100 V
dc; VBE = 0
ICES2
1.0
mA dc
Collector to emitter cutoff
current
3041
Bias condition D, VCE = 40 V dc;
IB = 0
ICEO
50
µA dc
Emitter to base cutoff
current
3061
Bias condition D, VEB = 4 V dc;
IC = 0
IEBO1
1.0
µA dc
Emitter to base cutoff
current
3061
Bias condition D, VEB = 5.5 V dc;
IC = 0
IEBO2
1.0
mA dc
Subgroup 2
See footnote at end of table.
14
80
V dc
MIL-PRF-19500/545D
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 2 - Continued
Forward current transfer
ratio
3076
VCE = 5 V dc; IC = 50 mA dc,
pulsed (see 4.5.1)
hFE1
2N5151 2/
2N5153
Forward current transfer
ratio
20
50
3076
VCE = 5 V dc; IC = 2.5 A dc,
pulsed (see 4.5.1)
hFE2
30
70
2N5151 2/
2N5153
Forward current transfer
ratio
3076
VCE = 5 V dc; IC = 5 A dc, pulsed
(see 4.5.1)
hFE3
2N5151 2/
2N5153
Base-emitter voltage (nonsaturated)
90
200
20
40
3066
Test condition B, VCE = 5 V dc;
IC = 2.5 A dc, pulsed (see 4.5.1)
VBE
1.45
V dc|
Base-emitter saturation
voltage
3066
Test condition A, IC = 2.5 A dc;
IB = 250 mA dc, pulsed (see
4.5.1)
VBE(sat)1
1.45
V dc
Base-emitter saturation
voltage
3066
Test condition A, IC = 5 A dc;
IB = 500 mA dc; pulsed (see
4.5.1)
VBE(sat)2
2.2
V dc
Collector-emitter saturation
voltage
3071
IC = 2.5 A dc; IB = 250 mA dc,
pulsed (see 4.5.1)
VCE(sat)1
0.75
V dc
Collector-emitter saturation
voltage
3071
IC = 5 A dc; IB = 500 mA dc,
pulsed (see 4.5.1)
VCE(sat)2
1.5
V dc
ICEX
500
µA dc
Subgroup 3
High temperature
operation:
Collector to emitter cutoff
current
TC = +150°C
3041
Bias condition A, VCE = 60 V dc;
VBE = +2 V dc
See footnote at end of table.
15
MIL-PRF-19500/545D
TABLE I, Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 4 continued
Low temperature operation
Forward - current transfer
ratio
TC = -55°C
3076
VCE = 5 V dc; IC = 2.5 A dc;
pulsed (see 4.5.1)
hFE4
2N5151 2/
2N5153
15
25
Subgroup 4
Common-emitter, smallsignal, short-circuit,
forward-current transfer
ratio
3206
VCE = 5 V dc; IC = 100 mA dc;
f = 1 KHz
hfe
2N5151 2/
2N5153
Magnitude of commonemitter, small-signal shortcircuit, forward-current,
transfer ratio
20
50
3306
VCE = 5 V dc; IC = 500 mA dc,
f = 10 MHz
|hfe|
2N5151 2/
2N5153
Open-circuit output
capacitance
Switching time
6
7
3236
VCB = 10 V dc; IE = 0, f = 1 MHz
Cobo
250
pf
IC = 5 A dc; IB1 = 500 mA dc
ton
0.5
µs
IB2 = -500 mA dc
ts
1.4
µs
VBE(off) = 3.7 V dc
tf
0.5
µs
RL = 6 Ω, (see figure 4)
toff
1.5
µs
See footnote at end of table.
16
MIL-PRF-19500/545D
TABLE I, Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Conditions
3051
Pre-pulse condition for each test:
VCE = 0; IC = 0; TC = +25°C
Symbol
Limits
Min
Unit
Max
Subgroup 5
Safe operating area (D.C.)
Test # 1
Test # 2
Test # 3
Pulse condition for each test:
tp = 1 sec. 1 cycle. TC = +25°C,
(see figure 8)
VCE = 5.0 V dc, IC = 2 A dc for
TO39/5
VCE = 5.8 V dc, IC = 2 A dc for
U3, unheatsunk (see note 3) or
TBD
VCE = 32 V dc, IC = 310 mA dc
for TO39/5
VCE = 32 V dc, IC = 360 mA dc
for U3, unheatsunk (see note 3)
or TBD
VCE = 80 V dc, IC = 12.5 mA dc
for TO39/5
VCE = 80 V dc, IC = 14.5 mA dc
for U3, unheatsunk (see note 3)
or TBD
Safe operating area
(unclamped inductive)
TC = +25°C; RBB1 = 10 Ω;
RBB2 = 100 Ω; L = 0.3 mH;
RL = 0.1 Ω; VCC = 10 V dc;
VBB1 = 10 V dc; VBB2 = 4 V dc;
ICM = 10 A dc (see figure 6)
End point electrical
measurements
See table I, Subgroup 2
Subgroups 6 and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in
group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
17
MIL-PRF-19500/545D
TABLE II. Groups B, C and E delta electrical measurements. 1/ 2/ 3/
Steps
Inspection
MIL-STD-750
Method
1.
Forward - current
transfer ratio
3076
Symbol
Conditions
IC = 2.5 V dc; VCE = 5 V dc,
pulsed (see 4.5.1)
Limits
Min
∆hFE2
Unit
Max
± 20 percent
change from
initial reading.
1/ The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows: Subgroups 4 and 5, see table II
herein, step 1.
2/ The delta measurements for table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows: All
subgroups, see table II herein, step 1.
3/ The delta measurements for table VII of MIL-PRF-19500 are as follows: Subgroup 6, see table II herein, step 1.
4/ The delta measurements for 4.4.4 are as follows: Subgroups 1 and 2, see table II herein, step 1.
18
MIL-PRF-19500/545D
FIGURE 6. Maximum safe operating area.
RBB1 = 10 Ω
RBB2 = 100 Ω
L = 0.3 mH
RL = 0.1 Ω
VCC = 10 V dc
IC = 10 nA
VBB1 = 10 V dc
VBB2 = 4 V dc
FIGURE 7. Unclamped inductive load energy test circuit.
19
MIL-PRF-19500/545D
NOTES:
1. Vgen is -30 pulse (from 0 V) into a 50 ohm termination.
2. The Vgen waveform is supplied by a generator with the following characteristics: tr ≤ 15 ns, tf = 15 ns,
ZOUT = 50 ohm, duty cycle ≤ 2 percent.
3. Waveforms are monitored on an oscilloscope with the following characteristics: tr ≤ 15 ns,
RIN ≥ 10 MΩ,
CIN ≤ 11.5 pF.
4. Resistors shall be noninductive types.
5. The dc power supplies may require additional bypassing in order to minimize ringing.
6. An equivalent circuit may be used.
FIGURE 8. Switching time test circuit.
20
MIL-PRF-19500/545D
5. PACKAGING
5.1. Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency,
or within the Military Departments' System Command. Packaging data retrieval is available from the managing
Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1. Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2. Acquisition requirements. Acquisition documents must specify the following:
a.
Title, number, and date of this specification.
b.
Issue of DoDISS to be cited in the solicitation and, if required, the specified issue of individual documents
referenced (see 2.2.1).
c.
Lead finish (see 3.4.2).
d.
Type designation and product assurance level.
e. Packaging requirements (see 5.1).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-19500 whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.4. Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA2N5151) will be identified on the QML.
JANHC and JANKC ordering information
Manufacturer
PIN
33178
34156
43611
2N5151
2N5153
JANHCA2N5151
JANHCA2N5153
JANHCB2N5151
JANHCB2N5153
JANHCC2N5151
JANHCC2N5153
2N5151
2N5153
JANKCA2N5151
JANKCA2N5153
JANKCB2N5151
JANKCB2N5153
JANHCC2N5151
JANHCC2N5153
6.5. Changes from previous issue. Marginal notations are not used in this revision to identify changes with
respect to the previous issue due to the extensiveness of the changes.
21
MIL-PRF-19500/545D
Custodians:
Air Force - 11
Navy - NW
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2399)
22
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/545D
2. DOCUMENT DATE
010727
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER TYPES 2N5151, 2N5153, 2N5151L, 2N5153L,
2N5151U3, AND 2N5153U3 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
COMMERCIAL
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
c. ADDRESS
Defense Supply Center Columbus,
ATTN: DSCC-VAC, P. O. Box 3990,
Columbus, OH 43216-5000
DD Form 1426, Feb 1999 (EG)
b. TELEPHONE
Commercial
DSN
FAX
EMAIL
614-692-0510
850-0510
614-692-6939
[email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
Previous editions are obsolete
WHS/DIOR, Feb 99