INCH-POUND The documentation and process conversion measures necessary to comply with this amendment shall be completed by 23 June, 2001. MIL-PRF-19500/453D 23 March 2001 SUPERSEDING MIL-PRF-19500/453C 15 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY TYPES 2N5109, 2N5109UB, JAN, JANTX, JANTXV, AND JANS, JANHC and JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. 1.2 Physical dimensions. See figure 1 herein (similar to T0-39), figure 2 (2N5109UB) and figure 3 (JANHC2N5109, JANKC2N5109). 1.3 Maximum ratings. PT (1) (2) TA = +25°C W 1 VCBO VCEO IC VEBO TSTG Rja TJ V dc 40 V dc 20 A dc 0.4 V dc 3.0 °C -65 to +200 °C/W 175 °C +200 (1) Derate at 5.71 mW/°C above TA > +25°C. (2) PT = 2.9 W at TC = +25°C, derate at 16.6 mW/°C above TC > +25°C. 1.4 Primary electrical characteristics (common to all types). Limits hFE VCE = 15 V dc IC = 50 mA dc VCE(SAT) IC = 100mA dc IB = 10 mA dc V dc Min Max 40 150 0.5 Cobo IE = 0 100 kHz ≤ f ≤ 1 MHz VCB = 28 V dc hFE VCE = 15 V dc IC = 50 mA dc f = 200 MHz pF 3.5 6.0 11.0 Power gain IC = 50 mA dc f = 200 MHz Pin = -10dB VCE = 15 V dc dB 11.0 Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/453D Symbol Dimensions Inches Notes Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .190 .210 4.83 5.33 LD .016 .021 0.41 0.53 4 LL .500 .750 12.70 19.05 4 LU .016 .019 0.041 0.48 4 1.27 4 .050 L1 L2 .250 Q 6.35 .050 4 1.27 6 5 TL .029 .045 0.74 1.14 TW .028 .034 0.71 0.86 r α P .010 45° TP .100 0.25 45° TP 2.54 3 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. This zone is controlled for automatic handling. The variation in actual diameter within this zone shall not exceed .010 inch (0.254 mm). 4. (Three leads) LU applies between L1 and L2. LD applies between L2 and .5 inch (12.70 mm) from seating plane. Diameter is uncontrolled in L1 and beyond .5 inch (12.70 mm) from seating plane. 5. Measured from maximum diameter of the actual device. 6. Details of outline in this zone optional. FIGURE 1. Physical dimensions of transistor type 2N5109 (similar to TO 39). 2 MIL-PRF-19500/453D Dimensions Symbol A A1 B1 B2 B3 D D1 D2 D3 E E3 L1 L2 Inches Min .046 .017 .016 .016 .016 .085 .071 .035 .085 .115 .022 .022 Millimeters Min Max 0.97 1.42 0.43 0.89 0.41 0.61 0.41 0.61 0.41 0.61 2.41 2.74 1.81 2.01 0.89 0.99 2.41 2.74 2.82 3.25 3.25 0.56 0.96 0.56 0.96 Max .056 .035 .024 .024 .024 .108 .079 .039 .108 .128 .128 .038 .038 Note NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions, surface mount (UB version). 3 MIL-PRF-19500/453D E Die size: Die thickness: Base pad: Emitter pad: Back metal: Top metal: Back side: Glassivation: B .016 x .020 inches (0.4064 x 0.508 mm). .008 ±.0016 inches (0.2032 ±0.04064 mm). .0028 x .0028 inches (0.07112 x 0.07112 mm). .0028 x .0028 inches (0.07112 x 0.07112 mm). Gold, 6500 ±1950 Ang Aluminum, 17500 ±2500 Ang Collector SiO2, 7500 ±1500 Ang NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Unless otherwise specified tolerance is .00100 inch (0.00254 mm). FIGURE 3. JANHC and JANKC (A-version) die dimensions. 4 MIL-PRF-19500/453D 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in section 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this specification takes precedence. Nothing in this specification, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figure 1 (similar to T0-39), figure 2 (2N5109UB) and figure 3 (JANHC2N5109 and JANKC2N5109) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 5 MIL-PRF-19500/453D 3.6 Electrical test requirements. The electrical test requirements shall be group A as specified herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS levels JANTX and JANTXV levels 3c Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 7 Hermetic seal (optional) (1) Hermetic seal (optional) (1) 9 ICEO1 and hFE1 Not applicable 10 48 hours minimum 48 hours minimum 11 ICEO1 and hFE1; ∆ICEO1= 100 percent of initial value or 2 uA dc, whichever is greater. ∆hFE1 = ± 20 percent. ICEO1 and hFE1 12 See 4.3.1 240 hours minimum See 4.3.1 80 hours minimum 13 Subgroups 2 and 3 of table I herein; ∆ICEO1 = 100 percent of initial value or Subgroup 2 of table I herein; ∆ICEO1 = 100 percent of initial value or Optional Optional 2 µA dc, whichever is greater. ∆hFE1 = 20 percent change from initial reading; 14 (1) Hermetic seal test shall be performed in either screen 7 or screen 14. 6 2 µA dc, whichever is greater. ∆hFE1 = 20 percent change from initial reading; MIL-PRF-19500/453D 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 Vdc TA = Room ambient as defined in the general requirements of 4.5 of MIL-STD-750. Power shall be applied to the device to achieve a junction temperature, TJ = +135°C minimum and a minimum PD = 75 percent of PT maximum rated as defined in 1.3 herein. 4.3.2 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with method 3131 of MIL-STD-750. a. IH forward heating current ................ 200 mA (min). b. tH heating time .................................. 25 - 30 ms. c. IM measurement current ................... 5 mA. d. tmd measurement delay time............ 60 µs max. e. VCE collector-emitter voltage .......... 10 V dc minimum. The maximum limit for ZθJX under these test conditions are ZθJX (max) = 50°C/W 4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VIa (JANS) and 4.4.2.1 herein. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection table VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions B4 1037 VCB = 10 - 30 V dc. B5 1027 VCB = 10 V dc; TA = +125°C ±25°C for 96 hours with PT adjusted according to the chosen TA to give TJ = +275°C minimum. Optionally the test may be performed for a minimum of 216 hours with PT adjusted to achieve a TJ = +225°C; sample size = 45, c = 0. In this case the ambient temperature shall be adjusted such that a minimum 75 percent of maximum rated PT (see1.3) is applied to the device under test. (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample.) 7 MIL-PRF-19500/453D 4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Step Method Conditions 1 1027 Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc; power shall be applied to achieve TJ = 150°C minimum and a power dissipation of PD ≥ 75 percent of max rated PT as defined in 1.3 herein shall be used. n = 45 devices, c = 0. For small lots, n = 12 devices, c = 0. 2 1027 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX and JANTXV) herein for group C testing. Electrical measurements (end-points) shall be in accordance with group A, subgroup 2. 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E. C6 1026 1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ = +150°C minimum and a power dissipation of PD ≥ 75 percent of max rated PT as defined in 1.3 herein shall be applied. n = 45 devices, c = 0. For small lots, n = 12 devices, c = 0. 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup C2 C6 Method Condition 2036 Test condition E. Not applicable. 8 MIL-PRF-19500/453D 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power application shall be 79 mA dc minimum. b. Collector to emitter voltage magnitude shall be 20 V dc minimum. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be +25°C ≤ TR ≤ +75°C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to case. f. Maximum limit of RθJC shall be 60°C/W. 9 MIL-PRF-19500/453D TABLE I. Group A inspection. Inspection 1/ Method MIL-STD-750 Conditions Symbol Min Limits Max Unit Subgroup 1 2/ 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to 3/ 4/ 5/ Solvent 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Heremetic seal 4/ fine leak gross leak 1071 n = 22 devices, c = 0 Visual and mechanical 3/ examination Electrical measurements 4/ Bond strength 3/ 4/ Group A, subgroup 2 2037 Precondition TA = +250°C at t = 24 hrs or TA = +300°C at t = 2 hrs, n = 11 wires, c = 0 Breakdown voltage, collector to base 3001 Bias condition D; IC = 100 µA dc V(BR)CBO 40 V dc Breakdown voltage, collector to emitter 3011 Bias condition D; IC = 5 mA dc V(BR)CEO 20 V dc Breakdown voltage, emitter to base 3026 Bias condition D; IC = 100 µA dc V(BR)EBO 3.0 V dc Breakdown voltage, collector to emitter 3011 Bias condition D; IC = 5 mA dc; R2 = 10 V(BR)CER 40 V dc Collector to emitter cutoff current 3041 Bias condition D; VCE = 15 V dc ICE01 Forward-current transfer ratio 3076 VCE = 15 V dc; IC = 50 mA dc; Pulsed (see 4.5.1) hFE1 Collector to emitter saturated voltage 3071 IC = 100 mA dc; IB = 10 mA dc; Pulsed (see 4.5.1) VCE(sat)1 0.5 V dc ICE02 5.0 mA dc Subgroup 2 20 40 µA dc 150 Subgroup 3 High temperature operation: Collector to emitter cutoff current TC = +175°C 3041 Bias condition D; VCE = 15 V dc See footnotes at end of table. 10 MIL-PRF-19500/453D TABLE I. Group A inspection - Continued. Inspection 1/ Method MIL-STD-750 Conditions Symbol Min Limits Max Unit Subgroup 3 - Continued Low temperature operation TA = -55°C 3076 VCE = 5 V dc IC = 50 mA dc; Pulsed (see 4.5.1) hFE2 Open circuit output capacitance 3236 VCB = 5 V dc; IE = 0 100 kHz ≤ f ≤ 1 MHz Cobo Magnitude of commonemitter small-signal short-circuit forward-current transfer ratio 3306 VCE = 15 V dc f = 200 MHz hfe Forward-current transfer ratio 15 Subgroup 4 3.5 5.0 6.0 5.0 IC = 25 mA dc; IC = 50 mA dc; IC = 100 mA dc pF 10 11.0 10.5 Power gain (narrow band) current VCC = 15 V dc; IC = 50 mA dc; f = 200 MHz; Pin = -10 dB (See figure 4) GPE 11 Cross modulation VCC = 15 V dc; IC = 50 mA dc; 54 dB output; (See figure 4) cm -57 dB Noise figure VCC = 15 V dc; IC = 10 mA dc; f = 200 MHz; Pin = -10 dB (See figure 4) NF 3.5 dB Voltage gain (wideband) VCC = 15 V dc; IC = 50 mA dc; f = 50 to 216 MHz; Pin = -10 dB (See figure 5) G 11 dB dB Subgroups 5, 6, and 7 Not applicable 1/ For sampling plan, unless otherwise specified see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices. 5/ Not required for laser marked devices. 11 MIL-PRF-19500/453D C1, C2, C3: 1.0 to 30 pF. C4: 1.0 to 20 pF. C5: 10,000 pF. C6, C7: 1,000 pF. C8: .01 µF. L1: L4: L 2 , L3 : R1 : 4.5 turns, number 22 wire, .187 inch I. D. 3.5 turns, number 22 wire, .187 inch I. D. 0.82 µH RFC. 240Ω, 2 watts. FIGURE 4. RF amplifier for power gain and noise figure tests. 12 MIL-PRF-19500/453D C1, C2, C3, C5: 0.002 µF. C4: 0.03 µF. C6, C7: 1500 pF C8: 18 pF. R1: 4.7 kΩ, 0.25 W. R2: 6.8Ω, 0.5 W. R3 R4 T1 : 330Ω, 1W. : 200S, 0.25 W. : 4 turns number 30 wire. Bifilar wound on "Indiana General". Core number CF-102-Q1, or equivalent. FIGURE 5. RF amplifier for voltage gain test. 13 MIL-PRF-19500/453D 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.1). c. Lead finish (see 3.4.1). d. Product assurance level and type designator. e. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA2N5109) will be identified on the QPL. Die ordering information PIN Manufacturer 34156 2N5109 JANHCA2N5109 JANKCA2N5109 14 MIL-PRF-19500/453D 6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue because of the extensiveness of the changes. Custodians: Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2348) Review activity: Air Force - 19, 99 15 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/453D 2. DOCUMENT DATE 23 February 2001 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY TYPES 2N5109, 2N5109UB, JAN, JANTX, JANTXV, AND JANS, JANHC, AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99