KEC KDS165T

SEMICONDUCTOR
KDS165T
TECHNICAL DATA
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Low Forward Voltage.
E
Fast Reverse Recovery Time.
B
Small Total Capacitance.
1
DIM MILLIMETERS
_ 0.2
A
2.9 +
4
B
1.6+0.2/-0.1
_ 0.05
0.70 +
A
F
C
3
RATING
UNIT
VRM
85
V
VR
80
V
Maximum (Peak) Forward Current
IFM *
300
mA
Average Forward Current
IO *
100
mA
Surge Current (10ms)
IFSM *
2
A
Power Dissipation
PD **
900
mW
Tj
150
Tstg
-55 150
Maximum (Peak) Reverse Voltage
Reverse Voltage
Junction Temperature
Storage Temperature Range
* : Unit Rating. (Total Rating=Unit Rating 1.5)
** : Total rating, Package mounted on a ceramic board (600
0.8
2.8+0.2/-0.3
_ 0.2
1.9 +
_ 0.05
0.16 +
0.00-0.10
0.25+0.3/-0.15
_ 0.1
0.60 +
_ 0.1
0.55 +
K
SYMBOL
G
H
I
CHARACTERISTIC
C
)
_ 0.1
0.4 +
E
F
G
H
I
J
K
4
I
MAXIMUM RATING (Ta=25
D
2
D
3
D1
D2
1
2
TSQ
)
Marking
4
Type Name
3
G 3
2
1
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Forward Voltage
Lot No.
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
VF(1)
IF=1mA
-
0.60
-
VF(2)
IF=10mA
-
0.72
-
VF(3)
IF=100mA
-
0.90
1.20
UNIT
V
Reverse Current
IR
VR=80V
-
-
0.5
A
Total Capacitance
CT
VR=0, f=1MHz
-
0.9
3.0
pF
Reverse Recovery Time
trr
IF=10mA
-
1.6
4.0
nS
2005. 6. 21
Revision No : 0
1/2
KDS165T
I F - VF
10
REVERSE CURRENT I R (µA)
3
10
FORWARD CURRENT I F (mA)
I R - VR
2
10
Ta
=
10
0
C
Ta
=2
Ta 5 C
=-2
5
C
10
1
10
10
-1
-2
0
0.2
0.4
0.6
0.8
1.0
1.2
Ta=100 C
1
Ta=75 C
10
-1
10
-2
10
-3
Ta=50 C
Ta=25 C
0
20
40
t rr
TOTAL CAPACITANCE CT (pF)
REVERSE RECOVERY TIME t rr (ns)
C T - VR
f=1MHz
Ta=25 C
1.6
1.2
0.8
0.4
0
0.1
0.3
1
3
10
80
REVERSE VOLTAGE VR (V)
FORWARD VOLTAGE V F (V)
2.0
60
30
100
- IF
100
Ta=25 C
Fig. 1
50
30
10
5
3
1
0.5
0.1
0.3
1
3
10
30
100
FORWARD CURRENT I F (mA)
REVERSE VOLTAGE VR (R)
Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT
INPUT
WAVEFORM
INPUT
0.01µF
DUT
WAVEFORM
50Ω
-6V
2kΩ
50Ω
0
OUTPUT
SAMPLING
OSCILLOSCOPE
(RIN =50Ω)
I F =10mA
0
0.1 I R
IR
50ns
E
t rr
PULSE GENERATOR
(R OUT =50Ω)
2005. 6. 21
Revision No : 0
2/2