KSC2333 KSC2333 High Speed Switching Application • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Load TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 500 Units V 400 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 4 A IB Base Current (DC) 1 A PC Collector Dissipation (TC=25°C) 15 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C *PW≤350µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage Test Condition IC = 0.5A, IB =0.1A, L = 1mH Min. 400 VCEX(sus)1 Collector-Emitter Sustaining Voltage IC = 0.5A, IB1 = -IB2 = 0.1A TC = 125°C, L = 180µH, clamped 450 V VCEX(sus)2 Collector-Emitter Sustaining Voltage IC = 1A, IB1 = 0.2A, -IB2 =0.2A TC= 125°C, L = 180µH, clamped 400 V ICBO Collector Cut-off Current VCB = 400V, IE = 0 ICER Collector Cut-off Current VCE = 400V, RBE =51Ω, TC = 125°C ICEX1 Collector Cut-off Current VCE = 400V, VBE(off) = -5V 10 µA ICEX2 Collector Cut-off Current VCE = 400V, VBE(off) = -5V @ TC = 125°C 1 mA 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE1 hFE2 * DC Current Gain VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5A Max. 20 10 Units V 10 µA 1 mA 80 VCE(sat) * Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 1 V VBE(sat) * Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 1.2 V VCC = 150V, IC = 0.5A IB1 = - IB2 = 0.1A RL = 300Ω 1 µs 2.5 µs 1 µs tON Turn ON Time tSTG Storage Time tF Fall Time * Pulse Test: PW≤350µs, Duty Cycle≤2%Pulsed hFE Classification Classification R O Y hFE1 20 ~ 40 30 ~ 60 40 ~ 80 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC2333 Typical Characteristics 1000 IB = 100mA 0.8 VCE = 5V Pulsed IB = 90mA IB = 80mA IB = 70mA IB = 60mA 0.6 hFE, DC CURRENT GAIN Ic[A], COLLECTOR CURRENT 1.0 IB = 50mA IB = 40mA IB = 30mA IB = 20mA 0.4 IB = 10mA 0.2 100 10 0.0 0 1 2 3 4 1 5 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 IC = 5IB1 = -5IB2 Pulsed IC /IB = 5 Pulsed 1 tstg ton[µs], TURN ON TIME tstg[µs], STORAGE TIME tf[µs], FALL TIME VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 V BE(sat) 0.1 V CE(sat) 1 tf ton 0.1 0.01 0.01 1 10 100 10 1000 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Turn On, Storage and Fall Time vs Collector Current 1.0 10000 1000 ipati on L 1m imit ed 10 S ite m Li 10 m 0µ S =1 0µ S S 0.7 0.6 0.5 0.4 0.3 0.2 VCEX(SUS) d 100 0.8 VCEO(SUS) IC(A), COLLECTOR CURRENT Diss b S/ IC[mA], COLLECTOR CURRENT 0.9 PW 0.1 0.0 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Forward Bias Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0 50 100 150 200 250 300 350 400 450 500 VCE (V), COLLECTOR-EMITTER VOLTAGE Figure 6. Reverse Bias Safe Operating Area Rev. A1, June 2001 KSC2333 Typical characteristics (Continued) 20.0 140 17.5 PC[W], POWER DISSIPATION 160 dT(%), Ic DERATING 120 100 80 S/b Limited 60 Dissipation Limited 40 20 0 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Areas ©2001 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A1, June 2001 KSC2333 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3