KEC KTC3790UM

SEMICONDUCTOR
KTC3790U
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
E
FEATURES
B
M
M
Low Noise Figure, High Gain.
2
NF=1.2dB, |S21e| =13dB (f=1GHz).
G
J
A
2
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
10
V
Emitter-Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Collector Power Dissipation
PC
100
mW
Junction Temperature
Tj
150
Tstg
-55 150
H
L
CHARACTERISTIC
3
1
)
C
MAXIMUM RATING (Ta=25
D
N
N
K
DIM
A
B
C
D
E
G
H
J
K
L
M
N
MILLIMETERS
_ 0.20
2.00 +
_ 0.15
1.25 +
_ 0.10
0.90 +
0.3+0.10/-0.05
_ 0.20
2.10 +
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_ 0.10
0.42 +
0.10 MIN
1. EMITTER
2. BASE
Storage Temperature Range
3. COLLECTOR
USM
Marking
Type Name
R
CHARACTERISTIC
SYMBOL
TEST CONDITION
h FE Rank
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=10V, IE=0
-
-
1
A
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
-
-
1
A
50
-
250
hFE (Note1)
DC Current Gain
VCE=8V, IC=20mA
Reverse Transfer Capacitance
Cre
VCB=10V, IE=0, f=1MHz (Note2)
-
0.35
0.9
pF
Transition Frequency
fT
VCE=8V, IC=20mA
-
9
-
GHz
Insertion Gain
|S21e|2
VCE=8V, IC=20mA, f=1GHz
11
13
-
dB
Noise Figure
NF
VCE=8V, IC=7mA, f=1GHz
-
1.2
2.5
dB
Note 1 : hFE Classification
L:50~100, M:80~160, N:125~250.
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.
2005. 11. 16
Revision No : 1
1/5
KTC3790U
hFE - IC
DC CURRENT GAIN hFE
300
VCE=8V
Ta=25 C
200
100
70
50
30
10
0.5
5
1
50
10
COLLECTOR CURRENT IC (mA)
REVERSE TRANSFER CAPACITANCE Cre (pF)
TYPICAL CHARACTERISTICS
Cre - VCB
3
f =1.0MHz
Ta=25 C
2
1
0.5
0.1
1
5
S21e
20
10
5
2
INSERTION GAIN S21e (dB)
TRANSITION FREQUENCY fT (GHz)
VCE=8V
Ta=25 C
1
5
10
20
30
2
5
VCE = 8V
f = 1.0GHz
Ta=25 C
1
- f
5
10
7
VCE=8V
IC=20mA
16 Ta=25 C
S21e
12
50 70
NF - I C
NOISE FIGURE NF (dB)
2
INSERTION GAIN S21e (dB)
- IC
COLLECTOR CURRENT IC (mA)
20
2
8
4
VCE = 8V
f = 1.0GHz
Ta=25 C
6
5
4
3
2
1
0
0.1
0.5
1.0
FREQUENCY f (GHz)
2005. 11. 16
2
10
COLLECTOR CURRENT IC (mA)
S21e
30
15
0
0.5
1
20
COLLECTOR-BASE VOLTAGE VCB (V)
f T - IC
30
10
Revision No : 1
2.0
3.0
0
0.5
1
5
10
50 70
COLLECTOR CURRENT IC (mA)
2/5
KTC3790U
COLLECTOR POWER DISSIPATION
PC (mW)
Pc - Ta
200
100
0
0
50
100
150
AMBIENT TEMPERATURE Ta ( C)
S-PARAMETER
(VCE = 8V, IC = 5mA, ZO=50
Ta = 25 )
S11
Frequency
S21
S21
S22
MHz
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
200
0.728
-45.3
12.107
138.7
0.036
66.2
0.825
-21.6
400
0.490
-74.5
8.097
114.2
0.065
61.6
0.675
-26.6
600
0.343
-93.2
6.260
102.3
0.079
61.6
0.582
-29.0
800
0.253
-110.1
4.623
90.1
0.090
61.2
0.529
-28.6
1000
0.202
-131.1
4.004
83.6
0.101
61.3
0.500
-30.1
1200
0.176
-148.9
3.250
75.8
0.125
60.8
0.470
-31.4
1400
0.176
-162.8
3.021
69.4
0.144
60.0
0.448
-33.4
1600
0.179
173.9
2.575
63.4
0.160
59.8
0.427
-34.8
1800
0.186
163.3
2.520
58.9
0.188
59.1
0.406
-37.5
2000
0.211
151.1
2.183
53.4
0.202
58.9
0.386
-44.5
(VCE = 8V, IC = 20mA, ZO=50
Ta = 25 )
S11
Frequency
S21
S21
S22
MHz
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
200
0.366
-66.8
19.757
116.9
0.033
62.6
0.587
-22.5
400
0.194
-88.9
10.502
98.8
0.055
70.6
0.485
-23.8
600
0.124
-104.3
7.591
91.1
0.072
74.6
0.453
-24.3
800
0.077
-132.0
5.446
82.0
0.095
73.2
0.419
-23.2
1000
0.063
-156.4
4.653
77.6
0.107
72.1
0.413
-24.2
1200
0.065
179.5
3.754
71.6
0.135
72.1
0.392
-26.4
1400
0.074
168.0
3.460
66.5
0.164
70.1
0.369
-29.9
1600
0.108
147.0
2.934
61.9
0.178
69.6
0.347
-32.2
1800
0.116
137.6
2.870
58.2
0.205
66.3
0.333
-34.3
2000
0.134
131.2
2.479
53.4
0.221
64.0
0.312
-42.1
2005. 11. 16
Revision No : 1
3/5
KTC3790U
S11e
VCE =8V
I C =5mA
Ta=25 C
(UNIT : Ω)
S12e
VCE =8V
I C =5mA
Ta=25 C
j50
90
60
120
j25
j100
2GHz
j150
j10
30
150
j250
2GHz
10
0
25
f=0.2GHz
100
50
250
0.24
_ 180
+
-j10
0
0.061
0.12
0.18
0
-j250
f=0.2GHz
-j25
-30
-150
-j150
-j100
-60
-120
-90
-j50
S21e
VCE =8V
I C =5mA
Ta=25 C
S22e
VCE =8V
I C =5mA
Ta=25 C
(UNIT : Ω)
90
60
120
j50
j25
150
j100
j150
30
f=0.2GHz
j10
_ 180
+
0
2GHz
3.6
7.3
11
15 0
0
j250
10
25
100
50
250
f=0.2GHz
2GHz
-j10
-30
-150
-j150
-j25
-j100
-60
-120
-90
2005. 11. 16
-j250
Revision No : 1
-j50
4/5
KTC3790U
S11e
VCE =8V
I C =20mA
Ta=25 C
(UNIT : Ω)
S12e
VCE =8V
I C =20mA
Ta=25 C
j50
90
60
120
j25
j100
2GHz
j150
j10
30
150
j250
2GHz
10
0
25
100
50
250
_ 180
+
f=0.2GHz
-j10
0
f=0.2GHz
0.066
0.27
0.13
0.2
0
-j250
-j150
-j25
-30
-150
-j100
-60
-120
-j50
S21e
VCE =8V
I C =20mA
Ta=25 C
120
-90
S22e
VCE =8V
I C =20mA
Ta=25 C
(UNIT : Ω)
90
60
j50
j25
j100
f=0.2GHz
j150
30
150
j10
2GHz
0
180
5.9
12
18
24 0
0
j250
10
25
100
50
2GHz
250
f=0.2GHz
-j10
-j250
-j150
-30
-150
-j25
-60
-120
-90
2005. 11. 16
-j100
Revision No : 1
-j50
5/5