SHINDENGEN Schottky Rectifiers (SBD) M1FS6 Single Case Case :: M1F Unit : mm 6 0V 1.2A FEATURES ● Small SMT ● Tj150℃ ● Low VF=0.45V ● PRRSM avalanche guaranteed APPLICATION ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment ● Telecommuniction RATINGS ●Absolute Maximum Ratings (If not specified Tl=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Average Rectified Forward Current 50Hz sine wave, R-load Ta=25℃ On alumina substrate IO Peak Surge Forward Current Repetitive Peak Surge Reverse Power IFSM PRRSM 50Hz sine wave, R-load Ta=25℃ On glass-epoxy substrate 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25℃ Pulse width 10μs, Tj=25℃ ●Electrical Characteristics (If not specified Tl=25℃) Item Symbol Conditions Forward Voltage VF IF=1.1A, Pulse measurement Reverse Current IR VR=60V, Pulse measurement Junction Capacitance f=1MHz, VR=10V Cj θjl junction to lead Thermal Resistance θja junction to ambient On alumina substrate junction to ambient On glass-epoxy substrate Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -55∼150 150 60 65 1.2 0.75 40 60 Unit ℃ ℃ V V A Ratings Max.0.58 Max.1.0 Typ.53 Max.20 Max.108 Max.186 Unit V mA pF A W ℃/W M1FS6 Forward Voltage Forward Current IF [A] 10 Tl=150°C [MAX] Tl=150°C [TYP] 1 Tl=25°C [MAX] Tl=25°C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 Junction Capacitance Cj [pF] 10 0.1 100 10 Junction Capacitance Reverse Voltage VR [V] 1 M1FS6 f=1MHz Tl=25°C TYP M1FS6 Reverse Current 100 Tl=150°C [MAX] Tl=150°C [TYP] 10 Reverse Current IR [mA] Tl=125°C [TYP] Tl=100°C [TYP] 1 Tl=75°C [TYP] 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 Reverse Voltage VR [V] 50 60 M1FS6 Reverse Power Dissipation Reverse Power Dissipation PR [W] 3.5 3 DC D=0.05 0.1 2.5 0.2 2 0.3 1.5 0.5 1 SIN 0.5 0 0.8 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T M1FS6 Forward Power Dissipation 1.4 Forward Power Dissipation PF [W] DC 1.2 D=0.8 SIN 1 0.2 0.5 0.3 0.1 0.8 0.05 0.6 0.4 0.2 0 0 0.5 1 1.5 2 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T M1FS6 Derating Curve Average Rectified Forward Current IO [A] 2.4 2 Alumina substrate Soldering land 2mmφ Conductor layer 20µm Substrate thickness 0.64mm DC D=0.8 1.6 0.5 SIN 1.2 0.3 0.2 0.8 0.1 0.05 0.4 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 30V IO 0 0 VR tp D=tp /T T M1FS6 Derating Curve Average Rectified Forward Current IO [A] 1.4 DC 1.2 Glass-epoxy substrate Soldering land 2mmφ Conductor layer 35µm D=0.8 1 0.5 0.8 SIN 0.6 0.3 0.2 0.4 0.1 0.2 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 30V IO 0 0 VR tp D=tp /T T M1FS6 Peak Surge Forward Capability IFSM 50 10ms 10ms 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied Peak Surge Forward Current IFSM [A] 40 30 20 10 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP