Schottky Barrier Diodes (SBD) MA2ZD02 Silicon epitaxial planar type Unit : mm For high-frequency rectification A 0.625 0.3 0.5 ± 0.1 • Mini package (S-mini type 2-pin) • Reverse current (DC value) VR is low 1 0.16 − 0.06 2 Symbol Rating Unit VR 20 V Repetitive peak reverse voltage VRRM 20 V Average forward current IF(AV) 500 mA Non-repetitive peak forward surge current* IFSM 3 A Reverse voltage (DC) 0.7 ± 0.1 Parameter + 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.25 ± 0.1 K ■ Features 0.4 ± 0.1 1.7 ± 0.1 0.4 ± 0.1 2.5 ± 0.2 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2H Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (nonrepetitive) 2 1 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 1 µA 10 µA 0.4 V Reverse current (DC) IR1 VR = 5 V IR2 VR = 10 V Forward voltage (DC) VF1 IF = 10 mA 0.3 0.55 VF2 IF = 500 mA 0.5 Terminal capacitance Ct VR = 0 V, f = 1 MHz 60 pF V Reverse recovery time* trr IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 5 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2ZD02 Schottky Barrier Diodes (SBD) IF V F 104 0.8 0.7 Ta = 125°C 103 Forward voltage VF (V) 75°C 25°C − 20°C 10 1 10−1 Reverse current IR (µA) 102 Forward current IF (mA) IR VR VF Ta 103 0.6 0.5 IF = 500 mA 0.4 0.3 50 mA 0.2 Ta = 125°C 102 75°C 10 1 5 mA 25°C 0.1 10−2 0 0.1 0.2 0.3 0.4 0.5 0 −40 0.6 Forward voltage VF (V) 10−1 0 40 80 120 160 200 0 IR T a 5 10 80 10 1 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) Reverse current IR (µA) 102 60 50 40 30 20 10 10−1 −40 0 0 40 80 120 Ambient temperature Ta 2 160 (°C) 200 30 Ta = 25°C Ta = 25°C VR = 20 V 10 V 6V 3V 25 1 000 70 103 20 IF(surge) tW Ct VR 104 15 Reverse voltage VR (V) Ambient temperature Ta (°C) 0 5 10 15 20 25 Reverse voltage VR (V) 30 300 IF(surge) tW 100 30 Breakdown point (typ.) 10 3 1 0.3 0.1 0.1 0.3 1 3 10 30 Pulse width tW (ms) 100