Ordering number : ENN7602 MCH3445 N-Channel Silicon MOSFET MCH3445 Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2167A [MCH3445] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65 0.07 1.6 2.1 3 2.0 3 (Bottom view) 0.85 1 : Gate 2 : Source 3 : Drain Specifications 1 2 (Top view) SANYO : MCPH3 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±12 V 2 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) V 8 A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 Ratings min typ Unit max 20 VGS=±8V, VDS=0 VDS=10V, ID=1mA 0.4 VDS=10V, ID=1A 1.4 V 1 µA ±10 µA 1.3 V 165 mΩ Forward Transfer Admittance VGS(off) yfs Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=1A, VGS=4V ID=0.5A, VGS=2.5V 165 235 mΩ RDS(on)3 ID=0.1A, VGS=1.8V 225 340 mΩ 2.4 125 Marking : ZW S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1003 TS IM TA-100534 No.7602-1/4 MCH3445 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 120 Output Capacitance 31 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit 9 ns Rise Time tr td(off) See specified Test Circuit 29 ns See specified Test Circuit 18 ns tf See specified Test Circuit 22 ns Qg VDS=10V, VGS=4V, ID=2A 2.3 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A 0.50 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=2A, VGS=0 0.94 Turn-OFF Delay Time Fall Time Total Gate Charge 0.73 nC 1.2 V Switching Time Test Circuit VDD=10V VIN 4V 0V ID=1A RL=10Ω VOUT VIN D PW=10µs D.C.≤1% G MCH3445 P.G 50Ω ID -- VDS V VDS=10V 0.8 0.6 1.5V 0.5 0.4 0.3 0.6 0.4 --25° C 0.7 Ta=7 5°C Drain Current, ID -- A 0.8 ID -- VGS 1.0 1.8 10V 0.9 2.5V 4.0V 1.0 Drain Current, ID -- A S 0.2 0.1 0 0 25 °C 0.2 VGS=1.0V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0 0.9 1.0 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 400 0.2 IT06289 1.8 2.0 IT06290 RDS(on) -- Ta 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 350 300 250 0.5A ID=0.1A 200 1.0A 150 100 50 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 IT06352 350 300 V 250 .1A, I D=0 200 =1.8 VGS V 2.5 S= , VG 0.5A I D= =4.0V A, V GS I D=1.0 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT06353 No.7602-2/4 MCH3445 yfs -- ID 5 3 2 2 3 5 7 2 0.1 3 5 1.0 IT06293 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 7 5 1.2 IT06294 Ciss, Coss, Crss -- VDS 1000 VDD=10V VGS=4V f=1MHz 7 5 3 2 100 7 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 0.1 7 5 0.01 0.4 7 Drain Current, ID -- A tf 3 2 td(off) td(on) 10 7 5 tr 3 2 Ciss 100 7 5 Coss 3 3 2 Crss 2 1.0 0.01 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT06295 Drain Current, ID -- A 0 10 7 5 Drain Current, ID -- A 3.0 2.5 2.0 1.5 1.0 3 2 0 0.5 1.0 1.5 2.0 2.5 Total Gate Charge, Qg -- nC IT06297 PD -- Ta 1.0 6 8 10 12 14 16 18 20 IT06296 ASO IDP=8A <10µs 10 0µ s 1m s 10 m s 10 DC 0m s op er ati on ID=2A 1.0 7 5 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 0.5 0 4 2 VDS=10V ID=2A 3.5 2 Drain-to-Source Voltage, VDS -- V VGS -- Qg 4.0 Gate-to-Source Voltage, VGS -- V 3 2 3 2 0.1 0.01 Allowable Power Dissipation, PD -- W 1.0 7 5 --25 °C Ta= 7 3 2 75 25° °C C °C --25 C 75° C 25° VGS=0 Ta= VDS=10V 2 1.0 IF -- VSD 10 7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 3 Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT06354 0.8 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 ✕0 0.2 .8m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06355 No.7602-3/4