MCH6331 Ordering number : ENA1017 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6331 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS --30 V ±20 V ID --3.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --14 A Allowable Power Dissipation PD When mounted on ceramic substrate (1200mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0V Ratings min typ Unit max --30 V VDS=--30V, VGS=0V --1 μA ±10 μA IGSS VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA --1.2 Forward Transfer Admittance ⏐yfs⏐ RDS(on)1 VDS=--10V, ID=--1.5A 1.68 75 98 mΩ Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=--0.75A, VGS=--4.5V 122 171 mΩ ID=--0.75A, VGS=--4V 142 199 mΩ Cutoff Voltage Marking : YF ID=--1.5A, VGS=--10V --2.6 2.8 V S Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11608PE TI IM TC-00001120 No. A1017-1/4 MCH6331 Continued from preceding page. Parameter Symbol pF pF 46 pF td(on) tr See specified Test Circuit. 5.4 ns See specified Test Circuit. 12 ns td(off) tf See specified Test Circuit. 26 ns Reverse Transfer Capacitance Crss Turn-ON Delay Time Total Gate Charge Unit max 65 Coss Fall Time typ 250 Ciss Output Capacitance Turn-OFF Delay Time min VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz Input Capacitance Rise Time Ratings Conditions Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. 19 ns VDS=--10V, VGS=--10V, ID=--3.5A VDS=--10V, VGS=--10V, ID=--3.5A 5.0 nC 1.0 nC VDS=--10V, VGS=--10V, ID=--3.5A IS=--3.5A, VGS=0V 1.2 Package Dimensions nC --0.86 --1.5 V Switching Time Test Circuit unit : mm (typ) 7022A-009 VDD= --15V 0.25 VIN 2.0 6 5 0.15 0V --10V 4 ID= --1.5A RL=10Ω VIN 2.1 1.6 0 to 0.02 D VOUT 0.25 PW=10μs D.C.≤1% 1 2 3 0.65 G 0.3 0.07 0.85 MCH6331 P.G 1 2 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 6 5 4 SANYO : MCPH6 ID -- VDS --4. 5V --4. 0V --6.0V --3.0 50Ω S ID -- VGS --4 VDS= --10V V 5 --3. --0.5 --1 --25 °C --1.0 --2 25°C --3.0V 5°C --1.5 --3 Ta= 7 --2.0 Drain Current, ID -- A --10.0 Drain Current, ID -- A V --2.5 VGS= --2.5V 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT13185 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V --3.5 IT13186 No. A1017-2/4 MCH6331 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 50 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S ° -25 =- C Ta 1.0 °C 75 7 5 25 °C 3 20 40 60 80 100 120 140 160 IT13188 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --0.001 --0.2 td(off) 2 tf --1.0 --1.2 IT13190 f=1MHz 7 5 10 tr 7 --0.8 Ciss, Coss, Crss -- VDS 1000 3 Ciss, Coss, Crss -- pF 3 --0.6 Diode Forward Voltage, VSD -- V VDD= --15V VGS= --10V 5 --0.4 IT13189 SW Time -- ID 7 Switching Time, SW Time -- ns 0 --10 7 5 3 2 3 2 --20 Ambient Temperature, Ta -- °C VDS= --10V 5 --40 IT13187 ⏐yfs⏐ -- ID 7 0 --60 --16 C --1.5A .75A = --0 I D , .0V 5A = --4 --0.7 VGS , I D= V 5 . 4 = -VGS 1.5A , I D= ---10.0V = V GS --25° ID= --0.75A 200 25°C 200 250 5°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 150 RDS(on) -- Ta 300 Ta=25°C Ta= 7 300 td(on) 5 Ciss 2 100 7 Coss 5 Crss 3 2 3 2 --0.1 2 3 5 7 2 --1.0 3 Drain Current, ID -- A 10 7 3 2 --10 7 5 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 3 2 --1.0 7 5 3 2 --2 --0.1 7 5 --1 3 2 0 0 1 2 3 Total Gate Charge, Qg -- nC --5 4 5 IT13193 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --3.5A --9 0 IT13191 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 5 --30 IT13192 ASO IDP= --14A PW≤10μs 10 1m 0μs s ID= --3.5A 10 m DC s 10 0m op s er ati on (T a= 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13194 No. A1017-3/4 MCH6331 PD -- Ta Allowable Power Dissipation, PD -- W 1.6 When mounted on ceramic substrate (1200mm2✕0.8mm) 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13195 Note on usage : Since the MCH6331 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2008. Specifications and information herein are subject to change without notice. PS No. A1017-4/4