2SK4222 Ordering number : ENA1519 SANYO Semiconductors DATA SHEET 2SK4222 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 10V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID 23 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% V 80 A 2.5 W Allowable Power Dissipation PD 220 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 429 mJ 12 A Avalanche Current *2 Tc=25°C Note : *1 VDD=99V, L=5mH, IAV=12A *2 L≤5mH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VDS=480V, VGS=0V VGS=±30V, VDS=0V Marking : K4222 Ratings min typ max 600 Unit V 100 μA ±100 nA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 12710QB TK IM TC-00002058 No. A1519-1/5 2SK4222 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max 3 5 V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on) VDS=10V, ID=1mA VDS=10V, ID=11.5A ID=11.5A, VGS=10V Input Capacitance Ciss VDS=30V, f=1MHz 2250 Output Capacitance Coss VDS=30V, f=1MHz 400 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 80 pF Turn-ON Delay Time td(on) See specified Test Circuit. 48 ns Rise Time tr See specified Test Circuit. 140 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 216 ns Fall Time tf See specified Test Circuit. 75 ns Total Gate Charge Qg nC Qgs VDS=200V, VGS=10V, ID=23A VDS=200V, VGS=10V, ID=23A 81 Gate-to-Source Charge 17 nC VDS=200V, VGS=10V, ID=23A IS=23A, VGS=0V 1.0 Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 7.5 15 S 0.26 0.34 Ω pF 45 nC 1.3 V Package Dimensions unit : mm (typ) 7503-004 4.8 15.6 14.0 3.2 20.0 1.2 1.3 15.0 2.6 3.5 2.0 1.6 20.0 2.0 1.0 1 0.6 2 3 1 : Gate 2 : Drain 3 : Source 1.4 0.6 5.45 SANYO : TO-3PB 5.45 Switching Time Test Circuit 10V 0V Avalanche Resistance Test Circuit VDD=200V VIN L ID=11.5A RL=17.3Ω VIN PW=10μs D.C.≤0.5% D ≥50Ω RG VOUT 10V 0V 2SK4222 50Ω VDD G P.G RGS=50Ω S 2SK4222 No. A1519-2/5 2SK4222 ID -- VDS 70 ID -- VGS 70 Tc=25°C 15V 8V 40 30 20 VGS=5V 0 5 10 15 6V 20 25 75°C 30 20 0 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V 20 IT14823 RDS(on) -- Tc ID=11.5A 0.7 0.6 0.5 Tc=75°C 0.4 0.3 25°C 0.2 --25°C 0.1 3 5 7 9 11 13 Source Current, IS -- A C 25° 10 5°C --2 = Tc °C 75 5 3 2 1.0 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 --25 0 25 Ciss, Coss, Crss -- pF td (off) 2 tr 7 1.0 7 5 3 2 0.1 7 5 3 2 0.4 0.6 0.8 3 5 7 1.0 2 3 1.0 1.2 Ciss, Coss, Crss -- VDS 1.4 IT14827 f=1MHz Ciss 2 1000 7 5 Coss 3 2 Crss 7 5 td(on) 2 150 IT14825 10 7 5 3 2 100 5 3 125 7 5 5 tf 100 VGS=0V 3 100 75 IS -- VSD 10000 7 3 50 Diode Forward Voltage, VSD -- V 1000 2 0.1 0.1 IT14826 VDD=200V VGS=10V 2 0.2 0.01 0.2 7 SW Time -- ID 3 =1 S VG 0.3 7 5 3 2 2 7 A 1.5 =1 ID , 0V 0.4 Case Temperature, Tc -- °C VDS=10V 3 0.5 IT14824 | yfs | -- ID 5 0.6 0 --50 15 Gate-to-Source Voltage, VGS -- V 0.7 --25°C 0.8 25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 40 0.8 0.9 0 25°C IT14822 RDS(on) -- VGS 1.0 50 10 30 Drain-to-Source Voltage, VDS -- V Tc= --25°C Tc=7 5°C 0 Forward Transfer Admittance, | yfs | -- S Drain Current, ID -- A 10V 50 10 Switching Time, SW Time -- ns VDS=20V 60 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A 60 5 7 10 Drain Current, ID -- A 2 3 5 IT14828 3 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT14829 No. A1519-3/5 2SK4222 VGS -- Qg 10 Drain Current, ID -- A 6 5 4 3 2 10 20 30 40 50 60 70 80 1.0 0.5 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT14799 EAS -- Ta 120 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.5 20 2 3 PD -- Tc 250 2.0 0 Tc=25°C Single pulse 0.1 0.1 90 2.5 0 Operation in this area is limited by RDS(on). IT14830 PD -- Ta 3.0 Allowable Power Dissipation, PD -- W 3 2 1 Total Gate Charge, Qg -- nC Avalanche Energy derating factor -- % 10 7 5 2 0 ID=23A 3 2 1.0 7 5 3 s 0μ 7 10 μs 10 8 0 IDP=80A (PW≤10μs) 100 7 5 s 1m s m s on 10 m rati 0 10 ope C D Gate-to-Source Voltage, VGS -- V 9 ASO 2 VDS=200V ID=26A 5 71000 IT14831 220 200 150 100 50 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT14821 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1519-4/5 2SK4222 Note on usage : Since the 2SK4222 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2010. Specifications and information herein are subject to change without notice. PS No. A1519-5/5