MITSUBISHI MGF0909A

MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0909A
L & S BAND GaAs FET [ non – matched ]
DESCRIPTION
OUTLINE DRAWING
Unit : millimeters
The MGF0909A GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
①
2MIN
• High output power
P1dB=38.0dBm(TYP.) @f=2.3GHz
GLp=11.0dB(TYP.)
4.4+0/-0.3
• High power gain
@f=2.3GHz
• High power added efficiency
@f=2.3GHz,P1dB
②
• Hermetic Package
φ2.2
0.6±0.2
APPLICATION
②
2MIN
ηadd=45%(TYP.)
③
• For L/S Band power amplifiers
QUALITY
• GG
5.0
• Ids=1.3A
• Rg=100Ω
1.65
• Vds=10V
0.1
RECOMMENDED BIAS CONDITIONS
Absolute maximum ratings
Symbol
14.0
(Ta=25°C)
Parameter
1.9±0.4
Ratings
Unit
VGSO
Gate to sourcebreakdown voltage
-15
V
VGDO
Gate to drain breakdown voltage
-15
V
ID
Drain current
5
A
IGR
Reverse gate current
-15
mA
IGF
Forward gate current
31.5
mA
PT
Total power dissipation
27.3
W
Tch
Cannel temperature
175
°C
Tstg
Storage temperature
-65 to +175
°C
Electrical characteristics
Symbol
0.65
9.0±0.2
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
GF-7
(Ta=25°C)
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
--
5.0
A
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=10mA
-2.0
-
-5.0
V
gm
Transconductance
VDS=3V,ID=1.3A
-
1.5
-
S
P1dB
Output power 1dB Compression P
VDS=10V,ID=1.3A,f=2.3GHz
37.0
38.0
-
dBm
ηadd
Power added Efficiency
*1 *1:Po=P1dB
-
45
-
%
GLP
Linear Power Gain
*2
10.0
11.0
-
dB
Rth(ch-c)
Thermal Resistance *1
-
-
9
°C/W
*1:Channel to case /
*2:Pi=22dBm
∆Vf Method
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
June/2004
MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C
TC=25deg
TC=75deg
45
90
40
80
35
70
Po
30
60
25
50
GLP(dB)
PAE
20
40
15
30
PAE (%)
Pout(dBm)
TC=0deg
TC=50deg
GP
10
20
5
10
0
0
0
10
20
Pin (dBm)
30
40
Mitsubishi Electric
June/2004
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0909A
L & S BAND GaAs FET [ non – matched ]
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts,
however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems.
In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design,
malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products
from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels
of safety in the products when in use by customers.
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Mitsubishi Electric
June/2004