< Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) Fig.1 High associated gain @ f=12GHz Gs = 13.5dB (Typ.) APPLICATION L to K band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V, ID=10mA ORDERRING INFORMATION Tape & reel 4000pcs./reel RoHS COMPLIANT MGF4941AL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO Gate to source voltage ID PT Tch Tstg Parameter Drain current V(BR)GDO Ratings Unit -3 V -3 V IDSS mA Total power dissipation 50 mW Channel temperature 125 °C Storage temperature -55 to +125 °C ELECTRICAL CHARACTERISTICS Symbol (Ta=25°C ) Parameter (Ta=25°C ) Test conditions Limits Unit MIN. TYP. MAX -3 -- -- Gate to drain breakdown voltage IG=-10µA IGSS Gate to source leakage current VGS=-2V,VDS=0V -- -- 50 µA IDSS Saturated drain current VGS=0V,VDS=2V 15 -- 60 mA Gate to source cut-off voltage VDS=2V,ID=500µA -0.1 -- -1.5 V VDS=2V, Gs Associated gain ID=10mA,f=12GHz NFmin. Minimum noise figure Note: Gs and NFmin. are tested with sampling inspection. 12.0 13.5 -- dB -- 0.35 0.5 dB VGS(off) Publication Date : Apr., 2011 1 V <Low Noise GaAs HEMT> MGF4941AL Micro-X type plastic package Fig.1 3.2±0.1 (0.30) 2.6±0.1 (0.30) Bottom 0.5±0.1 (2.3) (2.3) rAA ② (0.30) ② 0.65±0.1 A 3.2±0.1 (0.30) ① 2.6±0.1 Top ③ Unit : mm 2.2±0.1 0.15±0.05 Side 1.35±0.2 1.7±0.1 ① Gate ② Source ③ Drain (GD-32) Publication Date : Apr., 2011 2 <Low Noise GaAs HEMT> MGF4941AL Micro-X type plastic package TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. V DS 50 V GS=-0.1V /STEP VDS=2V DRAIN CURRENT, I D (mA) DRAIN CURRENT I D(mA) 50 ID vs. V GS 40 30 20 10 30 20 10 0 0 0 1 2 3 -1.0 Drain to Source voltage V DS(V) 16 V DS=2V f =12GHz 14 Gs 0.8 12 0.6 10 NF 0.4 8 0.2 ASSOCIATED GAIN, Gs (dB) 1.2 1.0 6 0 5 10 15 -0.5 Gate to Source voltage, V GS(V) NF & Gs vs . ID NOISE FIGURE, NF (dB) 40 20 DRAIN CURRENT, ID (mA) Publication Date : Apr., 2011 3 0.0 <Low Noise GaAs HEMT> MGF4941AL Micro-X type plastic package S PARAMETERS Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 (mag) (ang) 0.997 -18.3 0.976 -30.0 0.944 -41.7 0.880 -53.4 0.804 -67.6 0.728 -82.3 0.640 -98.0 0.563 -116.4 0.476 -134.2 0.408 -153.5 0.381 -174.5 0.370 163.2 0.385 141.3 0.415 124.1 0.458 109.1 0.529 94.8 0.586 83.3 0.643 73.3 Noise Parameter Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 NFmin (dB) 0.18 0.19 0.19 0.20 0.23 0.24 0.26 0.29 0.31 0.34 0.37 0.40 0.45 0.50 0.55 0.61 0.66 0.72 (VDS=2V,ID=10mA,Ta=room temperature) S21 S12 S22 (mag) (ang) (mag) (ang) (mag) (ang) 5.603 158.4 0.023 73.4 0.702 -11.1 5.399 145.6 0.033 67.2 0.668 -20.1 5.195 132.7 0.043 61.0 0.634 -29.1 4.991 119.8 0.053 54.8 0.600 -38.1 4.874 105.3 0.064 46.8 0.563 -47.6 4.743 90.7 0.074 39.0 0.519 -57.2 4.569 76.0 0.082 31.0 0.467 -66.6 4.389 61.2 0.091 22.3 0.406 -77.4 4.123 47.5 0.095 15.2 0.343 -86.1 3.898 34.7 0.095 9.9 0.285 -94.4 3.736 22.2 0.101 5.8 0.245 -105.3 3.559 9.8 0.105 1.9 0.203 -119.0 3.391 -2.6 0.110 -3.1 0.167 -137.9 3.275 -14.2 0.113 -5.8 0.156 -157.0 3.148 -26.2 0.117 -10.7 0.153 178.7 2.961 -40.7 0.131 -15.1 0.214 144.7 2.817 -53.4 0.142 -19.9 0.257 125.9 2.620 -65.9 0.153 -26.4 0.317 106.1 (VDS=2V,ID=10mA, Ta=room temperature) Γopt Rn (mag) (ang) (Ω) 0.96 -32.8 17.0 0.93 -17.9 15.5 0.90 -3.0 14.0 0.84 11.9 12.5 0.79 26.8 11.0 0.74 41.7 9.5 0.65 56.6 8.0 0.53 73.6 6.0 0.44 92.6 4.5 0.34 113.6 3.5 0.28 136.5 2.5 0.25 161.2 2.5 0.25 -172.3 2.5 Measurement plane (2.6mm) 0.27 -144.2 3.0 0.33 -122.0 4.0 Recommended foot pattern; 0.44 -97.0 5.6 RO4003C/Rogers (εr=3.38, t=0.508mm) 0.55 -73.0 7.0 0.66 -47.0 8.7 Note: We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales offices. Publication Date : Apr., 2011 4 <Low Noise GaAs HEMT> MGF4941AL Micro-X type plastic package S PARAMETERS (VDS=2V,ID=10mA,Ta=room temperature) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 S11 (mag) (ang) 0.989 -13.9 0.967 -28.2 0.929 -41.5 0.882 -54.4 0.822 -65.9 0.757 -79.5 0.686 -93.3 0.611 -108.8 0.533 -125.1 0.463 -143.6 0.411 -164.1 0.382 174.7 0.378 152.3 0.395 131.4 0.435 113.6 0.486 99.0 0.543 86.2 0.603 73.7 0.663 61.2 0.704 50.1 0.746 40.5 0.778 32.3 S21 (mag) (ang) 5.497 164.6 5.416 149.6 5.278 135.0 5.172 121.5 4.932 108.0 4.959 94.1 4.826 80.4 4.732 66.8 4.587 53.6 4.403 40.5 4.140 27.8 4.010 15.6 3.782 3.3 3.653 -9.1 3.514 -21.3 3.366 -32.9 3.172 -45.3 3.049 -57.7 2.877 -70.2 2.641 -81.3 2.470 -91.5 2.311 -102.3 S12 (mag) (ang) 0.017 78.9 0.028 70.9 0.040 61.7 0.051 53.3 0.061 45.9 0.071 37.6 0.080 29.9 0.086 22.7 0.092 16.2 0.096 10.2 0.100 4.8 0.105 0.1 0.111 -4.7 0.115 -9.7 0.121 -14.6 0.126 -19.8 0.133 -25.5 0.140 -31.2 0.147 -37.9 0.152 -45.0 0.156 -52.4 0.156 -58.0 S22 (mag) 0.637 0.626 0.610 0.586 0.572 0.538 0.502 0.456 0.408 0.359 0.311 0.267 0.221 0.182 0.152 0.134 0.139 0.183 0.251 0.309 0.363 0.411 (ang) -10.6 -21.1 -31.1 -40.5 -50.8 -60.3 -69.8 -78.6 -86.5 -93.8 -100.7 -108.9 -119.3 -135.4 -157.0 177.7 145.4 115.8 95.1 80.2 70.0 59.8 Board: εr=2.2 Γopt (4-φ0.3: through-hole) rn NFmin (ang) (dB) 13.9 0.370 0.20 37.2 0.262 0.22 60.8 0.197 0.25 86.2 0.155 0.29 119.2 0.102 0.32 147.6 0.062 0.35 173.6 0.069 0.40 -143.9 0.083 0.49 -106.5 0.109 0.59 -73.0 0.146 0.73 -42.7 0.180 0.96 Note: rn is normarised by 50 ohm. Reference Reference point (Unit: mm) 2.08 (mag) 0.671 0.598 0.537 0.474 0.399 0.329 0.299 0.349 0.392 0.432 0.467 1.30 Freq. (GHz) 2 4 6 8 10 12 14 16 18 20 22 Thickness: 0.25mm (VDS=2V,ID=10mA, Ta=25°C) 0.74 NOISE PARAMETERS 2.60 (1.0mm) Note: We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales offices. Publication Date : Apr., 2011 5 <Low Noise GaAs HEMT> MGF4941AL Micro-X type plastic package S PARAMETERS (VDS=0V,VGS=0V,Ta=room temperature) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 S11 (mag) (ang) 0.996 -12.6 0.998 -25.4 0.988 -38.1 0.984 -50.8 0.971 -62.6 0.963 -77.1 0.949 -92.8 0.936 -110.9 0.915 -131.2 0.892 -153.9 0.878 -178.2 0.870 157.5 0.868 133.9 0.875 113.0 0.883 94.9 0.895 79.7 0.901 66.6 0.912 54.7 0.923 43.8 0.934 34.0 0.947 25.0 0.945 17.6 S21 (mag) (ang) 0.008 90.7 0.019 92.4 0.032 90.0 0.048 86.4 0.068 80.5 0.092 72.6 0.119 62.9 0.149 51.8 0.181 39.2 0.211 25.5 0.235 10.8 0.252 -3.9 0.258 -18.6 0.257 -32.0 0.250 -44.4 0.238 -55.0 0.225 -64.2 0.213 -72.0 0.205 -78.8 0.201 -85.1 0.195 -92.1 0.188 -98.3 S12 (mag) (ang) 0.008 93.1 0.019 92.2 0.032 90.6 0.048 86.3 0.069 81.0 0.092 72.7 0.120 62.9 0.150 52.2 0.182 39.5 0.211 25.9 0.237 11.1 0.252 -3.9 0.259 -18.6 0.257 -32.0 0.249 -44.1 0.238 -54.9 0.225 -64.0 0.215 -71.8 0.205 -78.7 0.202 -85.5 0.193 -92.7 0.188 -98.5 S22 (mag) 0.700 0.696 0.703 0.708 0.710 0.718 0.730 0.739 0.750 0.760 0.769 0.785 0.795 0.805 0.815 0.824 0.833 0.845 0.856 0.861 0.859 0.854 (ang) 167.0 154.5 142.2 129.1 117.1 104.8 92.6 81.3 70.7 60.8 51.6 42.8 34.7 26.9 19.2 11.6 5.2 0.1 -3.7 -8.4 -13.1 -18.2 S12 (mag) (ang) 0.023 79.5 0.045 71.9 0.067 63.2 0.089 54.7 0.110 46.5 0.132 37.5 0.158 28.7 0.184 18.6 0.210 8.5 0.238 -2.7 0.264 -14.8 0.289 -27.8 0.312 -42.2 0.327 -58.7 0.325 -76.6 0.306 -95.4 0.271 -114.4 0.220 -131.6 0.172 -144.9 0.136 -160.2 0.090 -176.6 0.049 171.4 S22 (mag) 0.998 0.990 0.995 0.993 0.993 0.985 0.982 0.970 0.962 0.956 0.945 0.932 0.921 0.914 0.909 0.911 0.916 0.924 0.926 0.939 0.961 0.968 (ang) -9.2 -18.6 -27.7 -36.7 -46.8 -56.3 -65.6 -75.4 -85.2 -95.5 -106.4 -118.6 -132.8 -149.6 -167.8 173.5 153.5 133.0 114.9 99.3 84.2 69.8 (VDS=0V,VGS=-2.5V,Ta=room temperature) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 S11 (mag) (ang) 1.003 -8.2 0.998 -16.7 0.994 -24.6 0.991 -32.2 0.986 -38.9 0.983 -46.7 0.977 -54.4 0.972 -63.3 0.963 -72.7 0.950 -83.2 0.938 -94.7 0.929 -107.7 0.916 -121.9 0.911 -137.5 0.904 -155.7 0.903 -175.3 0.910 163.6 0.914 142.1 0.912 121.4 0.927 103.4 0.955 87.0 0.971 72.1 S21 (mag) (ang) 0.022 80.5 0.045 72.1 0.067 62.9 0.088 54.8 0.109 46.3 0.133 37.4 0.157 28.6 0.183 18.8 0.211 8.3 0.237 -2.6 0.263 -14.9 0.289 -27.8 0.310 -42.3 0.326 -58.6 0.324 -76.7 0.305 -95.2 0.269 -114.1 0.219 -131.5 0.172 -145.0 0.136 -160.1 0.089 -178.2 0.048 167.9 Note: We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales offices. Publication Date : Apr., 2011 6 <Low Noise GaAs HEMT> MGF4941AL Micro-X type plastic package Keep safety first in your circuit designs! • Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire ore property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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