Order this document by MHPM7A20E60DC3/D SEMICONDUCTOR TECHNICAL DATA Integrated Power Stage for 230 VAC Motor Drive Motorola Preferred Device This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is designed for 2.0 hp general purpose 3–phase induction motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) with integrated ESD protection Gate– Emitter zener diodes and ultrafast soft (UFS) free–wheeling diodes to give optimum performance. The solderable top connector pins are designed for easy interfacing to the user’s control board. • Short Circuit Rated 10 µs @ 125°C, 400 V • Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) • Compact Package Outline • Access to Positive and Negative DC Bus • Independent Brake Circuit Connections • UL Recognition Pending 20 AMP, 600 VOLT HYBRID POWER MODULE ORDERING INFORMATION Device Voltage Rating Current Rating Equivalent Horsepower PHPM7A20E60DC3 600 20 2.0 CASE 464D–01 ISSUE O MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C) VRRM 900 V IGBT Reverse Voltage VCES 600 V Gate-Emitter Voltage VGES ± 20 V Continuous IGBT Collector Current (TC = 25°C) ICmax 20 A Continuous IGBT Collector Current (TC = 80°C) ICmax 15.8 A Repetitive Peak IGBT Collector Current (1) IC(pk) 40 A Continuous Free–Wheeling Diode Current (TC = 25°C) IFmax 20 A Continuous Free–Wheeling Diode Current (TC = 80°C) IF80 14.1 A Repetitive Peak Free–Wheeling Diode Current (1) IF(pk) 40 A Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95°C) IOmax 20 A IGBT Power Dissipation per die (TC = 95°C) PD 25 W Free–Wheeling Diode Power Dissipation per die (TC = 95°C) PD 17 W Junction Temperature Range TJ – 40 to +150 °C Short Circuit Duration (VCE = 400 V, TJ = 125°C) tsc 10 ms VISO 2500 Vac Operating Case Temperature Range TC – 40 to +95 °C Storage Temperature Range Tstg – 40 to +150 °C — 12 lb–in Isolation Voltage, pin to baseplate Mounting Torque — Heat Sink Mounting Holes (1) 1.0 ms = 1.0% duty cycle Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. IGBT Device Motorola Motorola, Inc. 1998 Data 1 MHPM7A20E60DC3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VF — 1.0 1.25 V Gate–Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) IGES — — ±20 mA Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V) ICES — 5.0 100 mA DC AND SMALL SIGNAL CHARACTERISTICS Input Rectifier Forward Voltage (IF = 20 A) Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) VGE(th) 4.0 6.0 8.0 V Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V(BR)CES 600 — — V Collector–Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) VCE(sat) — 2.2 2.6 V Free–Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V) VF 1.6 2.0 2.3 V Thermal Resistance — IGBT RqJC — 1.8 2.2 °C/W Thermal Resistance — Free–Wheeling (Fast Soft) Diode RqJC — 2.6 3.3 °C/W Thermal Resistance — Input Rectifier RqJC — 3.4 4.2 °C/W VF 1.983 2.024 2.066 V TCVF — –8.64 — mV/°C THERMAL CHARACTERISTICS, EACH DIE TEMPERATURE SENSE DIODE Forward Voltage (@ IF = 1.0 mA) Forward Voltage Temperature Coefficient (@ IF = 1.0 mA) 2 Motorola IGBT Device Data MHPM7A20E60DC3 TYPICAL CHARACTERISTICS 40 40 35 TJ = 125°C IF, FORWARD CURRENT (AMPS) IF, FORWARD CURRENT (AMPS) 35 30 25°C 25 20 15 10 5.0 0 TJ = 125°C 30 25°C 25 20 15 10 5.0 0 0 0.2 0.4 0.6 0.8 1.2 1.0 0 0.5 1.0 1.5 2.0 2.5 VF, FORWARD VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Forward Characteristics — Input Rectifier Figure 2. Forward Characteristics — Free–Wheeling Diode 40 40 35 35 IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 15 V 15 V VGE = 18 V 30 25 9.0 V 12 V 20 15 10 TJ = 25°C 5.0 VGE = 18 V 12 V 30 9.0 V 25 20 15 10 TJ = 125°C 5.0 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.5 0 1.0 1.5 2.0 3.0 2.5 3.5 4.0 5.0 4.5 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 3. Forward Characteristics, TJ = 25°C Figure 4. Forward Characteristics, TJ = 125°C +15 V IG , GATE CLAMP DIODE CURRENT (mA) 5.0 MBRS1100T3 4.0 3.0 2.0 120 W MC33153 RG(on) 1.0 20 W 0 –1.0 RG(off) –2.0 TJ = 25°C –3.0 –4.0 –5.0 –30 –20 –10 0 10 20 MBRS1100T3 MBRS1100T3 30 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) Figure 5. Gate–Emitter Zener Diode Clamp Characteristic Motorola IGBT Device Data Figure 6. Recommended Gate Drive Circuit 3 MHPM7A20E60DC3 TYPICAL CHARACTERISTICS V F, FORWARD VOLTAGE @ 1 mA (VOLTS) 2.5 +15 V R1 12.4 kW A/D INPUT 14 MAXIMUM TYPICAL MINIMUM 2.0 1.5 1.0 TYPICAL VF = 2.240 – 0.00864 T MIN: 2.199 – 0.00864 T MAX: 2.282 – 0.00864 T 0.5 0 20 0 15 40 60 80 100 140 120 160 T, TEMPERATURE (°C) Figure 7. Recommended Temperature Sense Bias Circuit MOTOR OUTPUT Figure 8. BAV99LT1 Temperature Sense Diode Performance: VF = 2.59 – 7.31E–3 TC BRAKE RESISTOR U R V S 3 PHASE INPUT W T 1 2 3 4 5 6 7 8 9 10 11 12 D7 D1 Q1 Q3 D3 D8 D10 D12 D9 D11 D13 Q5 D5 TEMP SENSE D14 Q2 D2 D4 24 R1 SENSE RESISTOR Q4 Q7 Q6 D6 23 22 R2 21 20 19 18 17 16 15 14 13 FILTER R3 + R NTC C1 FILTER Figure 9. Schematic of Module, Showing Pin–Out and External Connections 4 Motorola IGBT Device Data MHPM7A20E60DC3 KEEP–OUT ZONES (x4) 0.585 0.250 0.066 0.175 0.450 1.850 0.925 0.270 0.140 NON–PLATED THRU–HOLE PLATED THRU–HOLES (x24) OPTIONAL NON–PLATED THRU–HOLES FOR ACCESS TO HEAT SINK MOUNTING SCREWS (x2) NOTES: 1. Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non–plated thru–hole in the footprint. 2. Dimension of plated thru–holes indicates finished hole size after plating. 3. Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product. Figure 10. Package Footprint (Dimensions in Inches) Motorola IGBT Device Data 5 MHPM7A20E60DC3 PACKAGE DIMENSIONS A AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: P, Q, R, S...) ARE TO THE CENTER OF THE LEAD. Q 3 PL U Y 2 PL 1 B 2 3 4 5 6 7 8 9 10 11 MILLIMETERS DIM MIN MAX A 111.51 112.52 B 50.93 51.94 C 12.32 13.59 D 0.89 1.65 E 8.64 9.65 F 0.13 0.64 G 5.97 6.73 H 46.48 47.50 J 0.41 1.22 K 16.26 17.27 L 3.71 4.72 M 5.46 6.48 N 10.92 11.94 P 37.60 38.60 Q 2.01 2.62 R 23.24 23.75 S 14.35 15.37 U 99.10 100.08 V 81.28 82.55 W 42.67 43.69 Y 5.15 5.77 X 11.30 12.07 AA 2.01 2.72 AB 16.26 17.27 12 H P N R 24 23 22 21 20 19 18 17 16 15 14 13 S M G 22 PL 4 PL J INCHES MIN MAX 4.390 4.430 2.005 2.045 0.485 0.535 0.035 0.065 0.340 0.380 0.005 0.025 0.235 0.265 1.830 1.870 0.016 0.048 0.640 0.680 0.146 0.186 0.215 0.255 0.430 0.470 1.480 1.520 0.079 0.103 0.915 0.935 0.565 0.605 3.900 3.940 3.200 3.240 1.680 1.720 0.203 0.227 0.445 0.475 0.079 0.107 0.640 0.680 F DETAIL Z DETAIL Z 24 PL D 24 PL AB C X V K E L W CASE 464D–01 ISSUE O Motorola reserves the right to make changes without further notice to any products herein. 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