isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ6308 DESCRIPTION ·700V Collector-Base Breakdown Capability ·Excellent Dynamic Saturation Characteristics ·Fast swithing ·Low Saturation Voltage ·Advanced Technology Replacement for the 2N6308 APPLICATIONS ·Designed in circuits requiring good dynamio saturation characteristics in swithing power supply applications and other inductive swithing circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCES Collector-Emitter Sustaining Voltage 380 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 8 A IB Base Current-Continuous 4 A PC Collector Power Dissipation@TC=25℃ 140 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ6308 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 380 V V(BR)EBO Emitter-Collector Breakdown Voltage IE= 1.0mA; IC= 0 10 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=3A; IB= 0.4A 1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 1A 1 V Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V ICES Collector Cutoff Current VCE=700V; VBE=0V VCE=700V; VBE=0V, Tc=100℃ 0.1 1.5 mA IEBO Emitter Cutoff current VEB=10V; IC= 0 10 μA hFE DC Current Gain IC= 8A; VCE=5V Cob Output Capacitance VCE=10V; IE= 0; ftest=1.0KHz VBE(sat) isc Website：www.iscsemi.cn B B 5 20 100 pF