Order this document by MJD340/D SEMICONDUCTOR TECHNICAL DATA Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular MJE340 and MJE350 300 V (Min) — VCEO(sus) 0.5 A Rated Collector Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ v v SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS MAXIMUM RATINGS Rating Symbol Value Unit VCEO 300 Vdc Collector–Base Voltage VCB 300 Vdc Emitter–Base Voltage VEB 3 Vdc Collector Current — Continuous — Peak IC 0.5 0.75 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 15 0.12 Watts W/_C Total Power Dissipation* @ TA = 25_C Derate above 25_C PD 1.56 0.012 Watts W/_C TJ, Tstg – 65 to + 150 _C CASE 369–07 Symbol Max Unit Thermal Resistance, Junction to Case RθJC 8.33 _C/W Thermal Resistance, Junction to Ambient* RθJA 80 _C/W MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS Lead Temperature for Soldering Purpose TL 260 _C Collector–Emitter Voltage Operating and Storage Junction Temperature Range CASE 369A–13 Characteristic 0.190 4.826 THERMAL CHARACTERISTICS Characteristic Symbol Min Max Unit VCEO(sus) 300 — Vdc Collector Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO — 0.1 mAdc Emitter Cutoff Current (VBE = 3 Vdc, IC = 0) IEBO — 0.1 mAdc hFE 30 240 — 0.165 4.191 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) 0.118 3.0 Collector–Emitter Sustaining Voltage (1) (IC = 1 mAdc, IB = 0) 0.07 1.8 OFF CHARACTERISTICS 0.243 6.172 DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) * When surface mounted on minimum pad sizes recommended. (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 0.063 1.6 ON CHARACTERISTICS (1) inches mm Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 TYPICAL CHARACTERISTICS MJD340 300 VCE = 2 V VCE = 10 V hFE , DC CURRENT GAIN 200 TJ = 150°C 100 70 +100°C 50 + 25°C 30 20 10 – 55°C 1 2 3 5 7 10 20 30 50 IC, COLLECTOR CURRENT (mAdc) 70 100 200 300 500 Figure 1. DC Current Gain MJD340 1 V, VOLTAGE (VOLTS) TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 VCE(sat) @ IC/IB = 10 0.2 IC/IB = 5 0 10 20 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 2. “On” Voltages MJD350 1 200 1 TJ = 150°C TJ = 25°C 0.8 25°C 100 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN MJD350 70 – 55°C 50 30 20 VCE = 2 V VCC = 10 V 7 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain 2 0.6 VBE @ VCE = 10 V 0.4 IC/IB = 10 0.2 VCE(sat) 10 5 VBE(sat) @ IC/IB = 10 500 0 5 7 10 IC/IB = 5 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 Figure 4. “On” Voltages Motorola Bipolar Power Transistor Device Data r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.01 SINGLE PULSE 0.02 0.03 0.05 P(pk) RθJC(t) = r(t) RθJC RθJC = 8.33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1k Figure 5. Thermal Response IC, COLLECTOR CURRENT (mA) 1000 100 µs 500 300 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 500 µs 1 ms 100 50 30 20 dc 10 v 5 3 2 1 10 20 30 50 70 100 200 300 500 700 1000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 6. Active Region Safe Operating Area PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 1.5 15 TA (SURFACE MOUNT) TC 1 10 0.5 5 0 0 25 50 75 100 125 150 T, TEMPERATURE (°C) Figure 7. Power Derating Motorola Bipolar Power Transistor Device Data 3 PACKAGE DIMENSIONS C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE –T– E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D 2 PL G 0.13 (0.005) M T STYLE 1: PIN 1. 2. 3. 4. CASE 369A–13 ISSUE W C B V E R 4 A 1 2 3 S –T– K SEATING PLANE J F H D G 3 PL 0.13 (0.005) M T CASE 369–07 ISSUE K INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 ––– 0.030 0.050 0.138 ––– MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 ––– 0.77 1.27 3.51 ––– BASE COLLECTOR EMITTER COLLECTOR NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 BASE COLLECTOR EMITTER COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 4 ◊ Motorola Bipolar Power Transistor Device Data *MJD340/D* MJD340/D