DIODES MMBT4124

MMBT4124
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
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Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT4126)
Ideal for Medium Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
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C
E
B
Top View
Maximum Ratings
Device Schematic
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Symbol
VCBO
VCEO
VEBO
IC
Value
30
25
5.0
200
Unit
V
V
V
mA
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
@TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
30
25
5.0
⎯
⎯
⎯
⎯
⎯
50
50
V
V
V
nA
nA
IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
VCB = 20V, IE = 0V
VEB = 3.0V, IC = 0V
hFE
120
60
⎯
VCE(SAT)
VBE(SAT)
⎯
⎯
360
⎯
0.30
0.95
IC = 2.0mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 50mA, IB = 5.0mA
IC = 50mA, IB = 5.0mA
Cobo
Cibo
⎯
⎯
4.0
8.0
pF
pF
Small Signal Current Gain
hfe
120
480
⎯
Current Gain-Bandwidth Product
fT
300
⎯
MHz
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Notes:
V
V
Test Condition
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 1.0V, IC = 2.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMBT4124
Document number: DS30105 Rev. 11 - 2
1 of 3
www.diodes.com
January 2009
© Diodes Incorporated
MMBT4124
1,000
400
300
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
350
250
200
150
100
100
10
RθJA = 417°C/W
50
0
1
25
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
0
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC
IB = 10
0.1
0.01
0.1
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
0.1
10
IC
IB = 10
1
0.1
0.1
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current
15
CAPACITANCE (pF)
f = 1MHz
10
5
Cibo
Cobo
0
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 5 Typical Capacitance Characteristics
MMBT4124
Document number: DS30105 Rev. 11 - 2
2 of 3
www.diodes.com
January 2009
© Diodes Incorporated
MMBT4124
Ordering Information
(Note 5)
Part Number
MMBT4124-7-F
Notes:
Case
SOT-23
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
K1B
Date Code Key
Year
1998
Code
J
Month
Code
1999
K
2000
L
Jan
1
2001
M
Feb
2
2002
N
Mar
3
2003
P
Apr
4
K1B = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2004 2005
R
S
May
5
2006
T
2007
U
Jun
6
2008
V
Jul
7
2009
W
Aug
8
2010
X
2011 2012
Y
Z
Sep
9
Oct
O
2013
A
Nov
N
2014
B
2015
C
Dec
D
Package Outline Dimensions
A
SOT-23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
B C
H
K
M
K1
D
J
F
L
G
Suggested Pad Layout
Y
Z
C
X
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
MMBT4124
Document number: DS30105 Rev. 11 - 2
3 of 3
www.diodes.com
January 2009
© Diodes Incorporated