Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Style Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz • Useful for Class C Amplifiers • Available as Chips and in Hermetic and Surface Mount Packages • Can be Screened to JANTX, JANTXV Equivalent Levels (ceramic pacakges) • Tape and Reel Packaging Available for packaged devices. SOT-23 Description The MP4T3243 series of high fT low voltage NPN medium power silicon bipolar transistors is designed for usage in battery operated systems with 3-5 volt collector bias. They are useful as low phase noise oscillator transistors through 6 GHz and as moderate power driver amplifiers through 3 GHz. These transistors are available as chips for hybrid oscillators or in ceramic packages for military or commercial usage. Both the chips and hermetic packages can be screened to JANTX equivalent levels. Chip These transistors use high temperature gold, platinum, titanium metalization with silicon dioxide and silicon nitride passivation. The chip is emitter ballasted with polysilicon resistors to prevent current concentration at high current operation. Micro-X Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 1 Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Maximum Ratings Parameter MP4T324300 MP4T324333 MP4T324335 Symbol Unit Chip SOT-23 Micro-X VCBO Volts 8 8 8 Collector-Emitter Voltage VCE Volts 6 6 6 Emitter-Base Voltage1 VEB Volts 1.5 1.5 1.5 Collector Current1 IC mA 110 110 110 Junction Temperature Tj °C 200 125 200 Storage Temperature TSTG °C -65 to +175°C -65 to +125°C -65 to +175°C PT mW 600 250 400 TCP °C 150 125 150 1 Collector-Base Voltage 1 1,3 Power Dissipation 2 Operating Temperature 1. 2. 3. At 25°C case temperature (packaged transistors) or 25°C mounting surface temperature (chip transistors). Case or bonding surface temperature. Derate maximum power dissipation rating linearly to zero watts at maximum operating temperature. The thermal resistance of the MP4T324300 junction/case is 50°C/watt nominal. Electrical Specifications @ +25°C Parameter Gain Bandwidth Product MP4T324300 MP4T324333 MP4T324335 Condition Symbol Units Chip SOT-23 Micro-X VCE = 3 volts fT GHz 6 typ 6 typ 6 typ |S21E|2 dB f = 1 GHz 7 min 6 min 7 min f = 2 GHz 3 typ 2.5 typ 3 typ 2.2 max 2.4 max 2.2 max f = 1 GHz 10 typ 9 typ 10 typ f = 2 GHz 6 typ 4 typ 6 typ 8.5 typ 7 typ 8.5 typ f = 2 GHz 20 typ 19 typ 20 typ f = 3 GHz 15 typ 15 typ 15 typ I C = 50 mA Insertion Power Gain VCE = 3 volts I C = 40 mA Noise Figure VCE = 3 volts NF dB I C = 10 mA f = 1 GHz Unilateral Gain VCE = 3 volts GTU (max) dB I C = 40 mA Maximum Available Gain VCE = 3 volts MAG dB I C = 40 mA f = 2 GHz Power Out at 1 dB VCE = 3 volts Compression P1dB dBm I C = 50 mA Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 2 Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Electrical Specifications @ +25°C MP4T3243 Series Parameter Collector Cut-off Current Condition Symbol Min Typical Max Units VCB = 4 volts I CBO 10 µA I EBO 1 µA hFE 20 125 250 COB 0.8 1.0 pF I E = 0 µA Emitter Cut-off Current VEB = 1 volt I C = 0 µA Forward Current Gain VCE = 3 volts I C = 20 mA Collector Base VCB = 3 volts I E = 0 µA Junction Capacitance f = 1 MHz Typical Scattering Parameters in the MIcro-X Package MP4T324335 VCE = 3 Volts, IC = 10 mA Frequency S11E S21E S12E S22E (MHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle 1000 0.647 172 2.480 73.2 0.137 51.4 0.311 -165.8 2000 0.666 149 1.408 51.2 0.225 49.0 0.365 172.5 3000 0.694 128 1.135 34.1 0.336 43.8 0.366 156.0 4000 0.714 109 1.005 17.3 0.427 32.1 0.412 142.1 5000 0.748 90 0.948 4.0 0.507 22.8 0.453 127.2 6000 0.772 70 0.930 -9.1 0.605 11.8 0.499 111.9 MP4T324335 VCE = 3 Volts, IC = 20 mA Frequency S11E S21E S12E S22E (MHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle 1000 0.661 168 2.632 73.3 0.137 60.8 0.373 178.5 2000 0.677 146 1.493 53.1 0.238 53.0 0.421 161.3 3000 0.697 125 1.210 36.5 0.359 44.8 0.415 144.6 4000 0.715 107 1.067 19.3 0.451 31.0 0.450 130.3 5000 0.744 89 1.007 5.4 0.525 20.7 0.480 115.5 6000 0.762 69 0.990 -8.5 0.619 9.1 0.510 101.6 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Typical Scattering Parameters in the Micro-X Package (Cont’d) MP4T324335 VCE = 3 Volts, IC = 40 mA Frequency S11E S21E S12E S22E (MHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle 1000 0.675 164 2.678 73.3 0.139 66.2 0.424 176.6 2000 0.692 143 1.528 54.1 0.244 55.0 0.470 158.6 3000 0.707 121 1.230 37.7 0.368 45.9 0.455 141.6 4000 0.719 104 1.095 20.8 0.463 31.5 0.481 128.1 5000 0.749 86 1.035 6.5 0.537 20.4 0.504 113.3 6000 0.763 66 1.017 -7.8 0.629 8.4 0.523 99.2 MP4T324335 VCE = 3 Volts, IC = 60 mA Frequency S11E S21E S12E S22E (MHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle 1000 0.685 164 2.678 73.1 0.140 68.1 0.446 173.9 2000 0.698 143 1.528 54.2 0.251 56.1 0.492 156.8 3000 0.719 122 1.245 37.7 0.380 45.6 0.480 139.4 4000 0.727 104 1.103 20.7 0.474 31.0 0.502 125.4 5000 0.754 86 1.045 6.5 0.549 19.8 0.520 110.6 6000 0.767 67 1.025 -7.9 0.641 7.4 0.540 96.0 Typical Performance Curves NOMINAL POWER DERATING CURVES DC SAFE OPERATING RANGE at 25°c 110 100 80 TOTAL POWER DISSIPATION (mW) COLLECTOR CURRENT (mA) 200 MP4T324300 CHIP ON 25°C HEAT SINK 50 MP4T324335 MICRO-X 20 MP4T324333 SOT-23 1000 900 MP4T324300 CHIP ON 25°C HEAT SINK 800 700 600 500 MP4T324335 MICRO-X 400 300 200 100 MP4T324333 SOT-23 0 10 0 2 4 COLLECTOR EMITTER VOLTAGE (Volts) 6 -25 0 25 50 75 100 125 150 175 200 AMBIENT TEMP (C) Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 4 Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Typical Performance Curves (Cont’d) COLLECTOR-BASE CAPACITANCE (pF) NOMINAL COLLECTOR-BASE CAPACITANCE (COB) vs COLLECTORBASE VOLTAGE (MP4T324335) NOMINAL GAIN vs FREQUENCY at VCE = 3 VOLTS AND IC = 20 mA (MP4T324335) 12 1 10 GAIN (dB) 0.9 0.8 0.7 8 GTU (MAX) 6 4 |S21E |2 0.6 2 0.5 0 1 0.4 1 10 FREQUENCY (GHz) 10 COLLECTOR-BASE VOLTAGE (Volts) NOMINAL GAIN vs COLLECTOR CURRENT at f=1 GHz and VCE = 3 VOLTS (MP4T324335) NOMINAL GAIN vs COLLECTOR CURRENT AT f=2 GHz and VCE = 3 VOLTS (MP4T324335) 13 10 12 9 8 MAG MAG 7 10 GAIN (dB) GAIN (dB) 11 GTU (MAX) 9 8 7 6 GTU (MAX) 5 4 3 |S21E|2 6 |S21E |2 2 1 5 0 4 1 1 10 10 100 100 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) NOMINAL DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 3 VOLTS (MP4T324335) 120 7 110 6.5 DC CURRENT GAIN GAIN BANDWIDTH PRODUCT (GHz) NOMINAL GAIN BANDWIDTH PRODUCT (fT ) vs COLLECTOR CURRENT at VCE = 3 and 5 VOLTS (MP4T324335) 6 5.5 5 4.5 5 VOLTS 4 100 90 80 70 3.5 60 3 VOLTS 3 2.5 50 0 2 1 10 COLLECTOR CURRENT (mA) 100 20 40 60 80 100 COLLECTOR CURRENT (mA) Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 5 Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Typical Performance Curves (Cont’d) NOMINAL NOISE FIGURE and ASSOCIATED GAIN at 1 GHz at VCE = 3 VOLTS vs COLLECTOR CURRENT in mA (MP4T324335) NOMINAL OUTPUT POWER at the 1 dB COMPRESSION POINT vs COLLECTOR CURRENT at f = 2 and 3 GHz and VCE = 3 VOLTS (MP4T324335) 40 35 8 30 ASSOCIATED GAIN P1dB (dBm) NOISE FIGURE(dB) ASSOCIATD GAIN (dB) 10 6 4 25 2 GHz 20 3 GHz 15 10 2 5 NOISE FIGURE 0 0 1 10 100 0 5 10 15 20 COLLECTOR CURRENT (mA) 25 30 35 40 45 50 55 60 65 70 COLLECTOR CURRENT (mA) Case Styles MP4T324300 (Chip) MP4T324300 A Base B NOMINAL DIM. INCHES MILLIMETERS A 0.013 0.330 B 0.013 0.330 C 0.005 0.127 D (Dia.) 0.002 0.050 E (Chip Thickness) 0.0045 0.114 C D Emitter Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 6 Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Styles (Cont’d) MP4T324333 INCHES MP4T324333 (SOT-23) F N A D B M G K L H E C J MILLIMETERS DIM. MIN. MAX. MIN. MAX. A 0.044 1.12 B 0.004 0.10 C 0.040 1.00 D 0.013 0.020 0.33 0.50 E 0.003 0.006 0.08 0.15 F 0.110 0.119 2.80 3.00 G 0.047 0.056 1.20 1.40 H 0.037 typical 0.95 typical J 0.075 typical 1.90 typical K L DIM. 0.103 2.60 0.024 0.60 GRADIENT 1 M 10°max. N 2°. . . 30° 1. Applicable on all sides. INCHES MILLIMETERS Note: MP4T324335 (Micro-X) MP4T324335 Emitter F 4 PLCS. E H Collector Base B Emitter DIM. MIN. MAX. MIN. MAX. A 0.092 0.108 2.34 2.74 B 0.079 0.087 2.01 2.21 C 0.070 1.78 D 0.019 0.025 0.48 0.64 E 0.018 0.022 0.46 0.56 F 0.150 3.81 G 0.003 0.006 0.08 0.15 H 45° 45° A C D G Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 7