FREESCALE MRF19125SR3

Freescale Semiconductor
Technical Data
Document Number: MRF19125
Rev. 6, 4/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF19125R3
MRF19125SR3
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts,
IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 24 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 22%
ACPR — - 51 dB
IM3 — - 37.0 dBc
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1930- 1990 MHz, 125 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF191225R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF19125SR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
330
1.89
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.53
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
2 (Minimum)
M3 (Minimum)
MRF19125R3 MRF19125SR3
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
gfs
—
9
—
S
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 1300 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.185
0.21
Vdc
Crss
—
5.4
—
pF
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 μAdc)
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB
@ 0.01% Probability on CCDF.
Common- Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Gps
12
13.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
19
22
—
%
IM3
—
- 37
- 35
dBc
ACPR
—
- 51
- 47
dBc
IRL
—
- 13
-9
dB
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz)
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 - 885 MHz and f2 +885 MHz)
Input Return Loss
(VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
1. Part is internally matched both on input and output.
(continued)
MRF19125R3 MRF19125SR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Symbol
Min
Typ
Max
Unit
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
Gps
—
13.5
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
η
—
35
—
%
Third Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
IMD
—
- 30
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz,
f2 = 1990 MHz, Tone Spacing = 100 kHz)
IRL
—
- 13
—
dB
P1dB
—
130
—
W
Characteristic
Functional Tests (In Freescale Test Fixture)
Pout, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 1300 mA, f = 1990 MHz)
MRF19125R3 MRF19125SR3
RF Device Data
Freescale Semiconductor
3
VBIAS
R3
B1
R1
VSUPPLY
+
R2
C5
C4
C3
C7
C2
Z4
RF
INPUT
Z1
Z2
Z1, Z7
Z2
Z3
Z4
Z5
Z6
Z8
Z5
C8
C9
L1
C10
Z6
C11
+
+
+
C12
C13
C14
Z7
RF
OUTPUT
C6
DUT
0.500″ x 0.084″ Microstrip
1.105″ x 0.084″ Microstrip
0.360″ x 0.895″ Microstrip
0.920″ x 0.048″ Microstrip
0.605″ x 1.195″ Microstrip
0.800″ x 0.084″ Microstrip
0.660″ x 0.095″ Microstrip
+
Z8
Z3
C1
+
Board
PCB
0.030″ Glass Teflon®,
Keene GX - 0300- 55- 22, εr = 2.55
Etched Circuit Boards
MRF19125 Rev. 5, CMR
Figure 1. MRF19125R3(SR3) Test Circuit Schematic
Table 5. MRF19125R3(SR3) Test Circuit Component Designations and Values
Designators
Description
B1
Short Ferrite Bead, Fair Rite #2743019447
C1
51 pF Chip Capacitor, ATC #100B510JCA500X
C2, C7
5.1 pF Chip Capacitors, ATC #100B5R1JCA500X
C3, C10
1000 pF Chip Capacitors, ATC #100B102JCA500X
C4, C11
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C5
0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050
C6
10 pF Chip Capacitor, ATC #100B100JCA500X
C8
10 mF Tantalum Chip Capacitor, Kemet #T491X106K035AS4394
C9, C12, C13, C14
22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394
L1
1 Turn, #20 AWG, 0.100″ ID
N1, N2
Type N Flange Mounts, Omni Spectra #3052 - 1648- 10
R1
1.0 kΩ, 1/8 W Chip Resistor
R2
220 kΩ, 1/8 W Chip Resistor
R3
10 Ω, 1/8 W Chip Resistor
MRF19125R3 MRF19125SR3
4
RF Device Data
Freescale Semiconductor
C7
C2
C9
C8
R3
R1
L1
B1
C11
C10
C1
C3
C12 C13 C14
CUT OUT
R2 C5 C4
C6
MRF19125 Rev 5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF19125R3(SR3) Test Circuit Component Layout
MRF19125R3 MRF19125SR3
RF Device Data
Freescale Semiconductor
5
−42
G ps
15
−49
IM3
10
−56
η
5
−63
ACPR
−70
0
1
−40
35
29
3rd Order
−50
23
5th Order
17
−60
7th Order
−70
11
η
−80
40
10
5
4
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
Figure 4. Intermodulation Distortion
Products versus Output Power
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS Avg.) N−CDMA
−20
24
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
−25
−30
0
η
−10
IRL
20
−35
IDQ = 900 mA
−40
−20
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 @ 0.01% Probability (CCDF)
18
1100 mA
IM3
16
−45 1700 mA
1300 mA
G ps
12
4
10
100 150
−40
1920 1930
1940
1950
1960
1970
1980
−50
−60
1990 2000
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
Figure 5. Third Order Intermodulation
Distortion versus Output Power
Figure 6. 2-Carrier N-CDMA Broadband
Performance
14
38
56
−27
IDQ = 1300 mA
f = 1960 MHz
100 kHz Tone Spacing
G ps
12
48
40
8
32
6
24
η
4
P in
0
10
100
200
η
−28
36
−29
IMD
35
−30
34
−31
8
33
−32
0
32
16
2
37
η, DRAIN EFFICIENCY (%)
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
2
−30
VDD = 26 Vdc
Pout = 24 Watts (Avg.)
IDQ = 1300 mA
ACPR
14
−50 1500 mA
10
150
22
−55
P in , INPUT POWER (WATTS), G ps , POWER GAIN (dB)
−30
η, DRAIN EFFICIENCY (%)
20
41
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
100 kHz Tone Spacing
IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB)
−35
IM3 (dBc), ACPR (dBc)
25
−20
IMD, INTERMODULATION DISTORTION (dBc)
−28
VDD = 26 Vdc, IDQ = 1300 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
IMD, INTERMODULATION DISTORTION (dBc)
30
η, DRAIN EFFICIENCY (%)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
−33
24
24.5
25
25.5
26
26.5
27
27.5
28
Pout, OUTPUT POWER (WATTS)
VDD, DRAIN SUPPLY (V)
Figure 7. CW Performance
Figure 8. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
MRF19125R3 MRF19125SR3
6
RF Device Data
Freescale Semiconductor
14
IDQ = 1700 mA
G ps , POWER GAIN (dB)
1500 mA
13.5
1300 mA
1100 mA
13
900 mA
12.5
VDD = 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
12
4
100
10
−5
40
η
35
−10
−15
30
IRL
−20
25
VDD = 26 Vdc
Pout = 125 W (PEP)
IDQ = 1300 mA
100 kHz Tone Spacing
20
15
IMD
−30
Gps
10
1920 1930
150
−25
Pout, OUTPUT POWER (WATTS) PEP
1940
1950
1960
1970
1980
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
−35
1990 2000
f, FREQUENCY (MHz)
Figure 9. Two-Tone Power Gain versus
Output Power
Figure 10. Two-Tone Broadband Performance
MTTF FACTOR (HOURS X AMPS2)
IMD, INTERMODULATION DISTORTION (dBc)
1010
−25
3rd Order
−30
VDD = 26 Vdc
IDQ = 1300 mA
f = 1960 MHz
−35
−40
5th Order
−45
109
108
107
90 100 110 120 130 140 150 160 170 180 190 200 210
−50
TJ, JUNCTION TEMPERATURE (°C)
7th Order
−55
100
1000
5000
Df, TONE SPACING (kHz)
Figure 11. Intermodulation Distortion Products
versus Two - Tone Tone Spacing
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
MRF19125R3 MRF19125SR3
RF Device Data
Freescale Semiconductor
7
N - CDMA TEST SIGNAL
0
1.2288 MHz
Channel BW
−10
−20
−IM3 @
1.2288 MHz
Integrated BW
−30
+IM3 @
1.2288 MHz
Integrated BW
(dB)
−40
−50
−60
−70
−ACPR @ 30 kHz
Integrated BW
+ACPR @ 30 kHz
Integrated BW
−80
−90
−100
−7.5
−6
−4.5
−3
−1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
MRF19125R3 MRF19125SR3
8
RF Device Data
Freescale Semiconductor
f = 1930 MHz
Zload
f = 1990 MHz
Zo = 10 Ω
f = 1990 MHz
Zsource
f = 1930 MHz
VDD = 26 V, IDQ = 1300 mA, Pout = 24 W (Avg.)
f
MHz
Zload
Ω
Zsource
Ω
1930
1.43 - j5.01
0.75 - j0.93
1960
1.51 - j4.88
0.71 - j0.89
1990
1.56 - j4.93
0.68 - j1.02
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF19125R3 MRF19125SR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF19125R3 MRF19125SR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
4
2X
1
Q
bbb
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
M
B
(FLANGE)
3
K
2
bbb
D
T A
M
M
B
M
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
N
R
(INSULATOR)
ccc
M
T A
M
aaa
M
T A
M
B
S
(LID)
B
(LID)
M
(INSULATOR)
M
H
F
E
T
A
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.175
0.205
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.44
5.21
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
SEATING
PLANE
(FLANGE)
CASE 465B - 03
ISSUE D
NI - 880
MRF19125R3
B
1
B
(FLANGE)
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2
bbb
M
D
T A
M
B
M
M
bbb
M
T A
M
B
M
T A
M
B
ccc
M
N
ccc
R
(INSULATOR)
M
T A
S
(LID)
aaa
M
B
M
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
C
F
E
T
A
A
(FLANGE)
SEATING
PLANE
CASE 465C - 02
ISSUE D
NI - 880S
MRF19125SR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MRF19125R3 MRF19125SR3
RF Device Data
Freescale Semiconductor
11
How to Reach Us:
Home Page:
www.freescale.com
E - mail:
[email protected]
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1 - 800- 521- 6274 or +1 - 480- 768- 2130
[email protected]
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
[email protected]
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800- 441- 2447 or 303 - 675- 2140
Fax: 303 - 675- 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF19125R3 MRF19125SR3
Document Number: Document Number: MRF19125
Rev. 6, 4/2006
12
RF Device Data
Freescale Semiconductor