MOTOROLA MTP8N50E

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by MTP8N50E/D
SEMICONDUCTOR TECHNICAL DATA
 
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. This new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters, PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
TMOS POWER FET
8.0 AMPERES
500 VOLTS
RDS(on) = 0.8 OHM

D
G
S
CASE 221A–06, Style 5
TO-220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Symbol
Value
Unit
VDSS
500
Vdc
Drain–to–Gate Voltage (RGS = 1.0 MW)
VDGR
500
Vdc
Gate–to–Source Voltage – Continuous
Gate–to–Source Voltage – Non–repetitive (tp ≤ 10 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current — Continuous @ TC = 25°C
Drain Current — Continuous @ TC = 100°C
Drain Current — Single Pulse (tp ≤ 10 ms)
ID
ID
IDM
8.0
5.0
32
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
125
1.0
Watts
W/°C
TJ, Tstg
– 55 to 150
°C
EAS
510
mJ
RqJC
RqJA
1.0
62.5
°C/W
TL
260
°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 8.0 Apk, L = 16 mH, RG = 25 W)
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5 sec.
Apk
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
REV 2
TMOS
 Motorola
Motorola, Inc.
1996
Power MOSFET Transistor Device Data
1
MTP8N50E
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
500
—
—
500
—
—
Vdc
mV/°C
—
—
—
—
250
1000
—
—
100
2.0
—
2.8
6.3
4.0
—
—
0.6
0.8
—
—
5.0
—
7.2
6.4
4.0
—
—
Ciss
—
1450
1680
Coss
—
190
246
Crss
—
45.4
144
td(on)
—
15
50
tr
—
33
72
td(off)
—
40
150
tf
—
32
60
QT
—
40
64
Q1
—
8.0
—
Q2
—
17
—
Q3
—
17.3
—
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate–Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
mAdc
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 4.0 Adc)
RDS(on)
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 8.0 Adc)
(ID = 4.0 Adc, TJ = 125°C)
VDS(on)
Forward Transconductance
(VDS = 15 Vdc, ID = 4.0 Adc)
Vdc
mV/°C
Ohms
Vdc
gFS
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc,
Vdc VGS = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
pF
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
(Rgo + C17n
C1 = 9.1
9 1 W)
Turn–Off Delay Time
Fall Time
Gate Charge
(see Figure 8)
((VDS = 400 Vdc,
Vd , ID = 8
8.0
0 Ad
Adc,,
VGS = 10 Vdc)
ns
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
VSD
Forward On–Voltage
Vdc
(IS = 8.0 Adc, VGS = 0 Vdc)
—
1.2
2.0
(IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125°C)
—
1.1
—
trr
—
320
—
ta
—
179
—
tb
—
141
—
QRR
—
3.0
—
—
4.5
—
—
7.5
—
Reverse Recovery Time
((IS = 8.0
8 0 Adc,
Ad , VGS = 0 Vdc,
Vd ,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
ns
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
nH
(1) Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data
MTP8N50E
TYPICAL ELECTRICAL CHARACTERISTICS
16
16
VGS = 10 V
7V
12
6V
8.0
4.0
VDS ≥ 10 V
14
8V
I D, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
TJ = 25°C
5V
12
10
8.0
100°C
6.0
25°C
4.0
TJ = –55°C
2.0
0
2.0
0
12
2.0
4.0
6.0
8.0
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0
14
2.5
1.6
1.4
VGS = 10 V
TJ = 100°C
1.2
1.0
0.8
25°C
0.6
0.4
–55°C
0.2
0
0
2.0
4.0
8.0
12
6.0
10
ID, DRAIN CURRENT (AMPS)
16
14
TJ = 25°C
0.85
0.80
0.75
VGS = 10 V
0.70
15 V
0.65
0.60
0.55
0
4.0
6.0
8.0
10
14
12
16
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
100,000
VGS = 0 V
VGS = 10 V
ID = 8 A
TJ = 125°C
10,000
IDSS, LEAKAGE (nA)
RDS(on) , DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)
2.0
ID, DRAIN CURRENT (AMPS)
2.5
1.5
1.0
100°C
1,000
25°C
100
10
0.5
0
–50
7.0
0.90
Figure 3. On–Resistance versus Drain Current
and Temperature
2.0
6.5
Figure 2. Transfer Characteristics
R DS(on), DRAIN–TO–SOURCE RESISTANCE (OHMS)
R DS(on), DRAIN–TO–SOURCE RESISTANCE (OHMS)
Figure 1. On–Region Characteristics
3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1.0
–25
0
25
50
75
100
125
150
0
100
200
300
400
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
500
3
MTP8N50E
TYPICAL ELECTRICAL CHARACTERISTICS
10,000
4000
3000
VGS = 0 V
VGS = 0 V
TJ = 25°C
Ciss
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
VDS = 0 V
2000
Ciss
Crss
1000
TJ = 25°C
Ciss
1,000
Coss
100
Coss
Crss
0
–10
Crss
–5.0
0
5.0
15
10
20
10
10
25
100
DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS VDS
1000
Figure 8. High Voltage Capacitance Variation
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
12
1000
400
QT
10
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25°C
ID = 8 A
VDD = 250 V
VGS = 10 V
300
8.0
VGS
Q1
6.0
Q2
200
4.0
TJ = 25°C
ID = 8 A
2.0
0
0
Q3
VDS
8.0
16
24
Qg, TOTAL GATE CHARGE (nC)
100
10
1.0
100
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
100
8.0
VGS = 20 V
SINGLE PULSE
TC = 25°C
TJ = 25°C
VGS = 0 V
I D, DRAIN CURRENT (AMPS)
I S , SOURCE CURRENT (AMPS)
10
RG, GATE RESISTANCE (OHMS)
Figure 9. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
6.0
4.0
2.0
10
10 ms
100 ms
1 ms
10 ms
dc
1.0
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.01
0
0.5
4
td(off)
tr
tf
td(on)
100
0
40
32
t, TIME (ns)
V GS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0.1
1.0
10
100
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage versus
Current
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
1000
Motorola TMOS Power MOSFET Transistor Device Data
MTP8N50E
EAS , SINGLE PULSE DRAIN–TO–SOURCE
AVALANCHE ENERGY (mJ)
600
ID = 8 A
500
400
300
200
100
0
25
75
125
50
100
TJ, STARTING JUNCTION TEMPERATURE (°C)
150
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.00001
0.001
0.01
t, TIME (seconds)
0.1
1.0
10
Figure 14. Thermal Response
Motorola TMOS Power MOSFET Transistor Device Data
5
MTP8N50E
PACKAGE DIMENSIONS
–T–
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
C
F
T
S
4
A
Q
1 2 3
STYLE 5:
PIN 1.
2.
3.
4.
U
H
K
Z
L
R
V
J
G
D
N
GATE
DRAIN
SOURCE
DRAIN
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
CASE 221A–06
ISSUE Y
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6
◊
MTP8N50E/D
Motorola TMOS Power MOSFET Transistor Device
Data