SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N3799X • Low Noise • Hermetic TO-18 Metal package. • Ideally suited for Low Level Amplifier. Instrumentation Amplifiers and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at -60V -50V -5V -50mA 360mW 2.06mW/°C 1.2W 6.86mW/°C -65 to +200°C -65 to +200°C Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range THERMAL PROPERTIES Symbols Parameters Min. Typ. Max. Units RθJA Thermal Resistance, Junction To Ambient 486.11 °C/W RθJC Thermal Resistance, Junction To Case 145.83 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8240 Issue 1 Page 1 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N3799X ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions IC = -10mA IB = 0 -60 IC = -10µA IE = 0 -50 V(BR)EBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage IE = -10µA IC = 0 -5 ICBO Collector Cut-Off Current VCB = -50V IE = 0 IEBO Emitter Cut-Off Current (1) V(BR)CEO V(BR)CBO (1) VCE(sat) VBE(sat) VBE(on) hFE (1) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Min. Typ Max. V -0.01 TA = 150°C -10 VEB = -4V IC = 0 -20 IC = -100µA IB = -10µA -0.2 IC = -1.0mA IB = -100µA -0.25 IC = -100µA IB = -10µA -0.7 IC = -1.0mA IB = -100µA -0.8 IC = -100µA VCE = -5V -0.7 IC = -1.0µA VCE = -5V 75 IC = -10µA VCE = -5V 225 IC = -100µA VCE = -5V 300 TA = -55°C 150 IC = -500µA VCE = -5V 300 IC = -1.0mA VCE = -5V 300 IC = -10mA VCE = -5V 250 Forward-current transfer ratio Units µA nA V Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8240 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N3799X DYNAMIC CHARACTERISTICS IC = -500µA fT VCE = -5V 30 f = 20MHz Transition Frequency IC = -1.0mA MHz VCE = -5V 100 500 f = 100MHz Cobo VCB = -5V Output Capacitance IE = 0 4 f = 1.0MHz VEB = -0.5V Cibo Input Capacitance hie Input Impedance hoe Output Admittance IC = -1.0mA hre Voltage Feedback Ratio f = 1.0MHz hfe Small Signal Current Gain pF IC = 0 8 f = 1.0MHz VCE = -10V 10 40 KΩ 5 60 µhmos 25 x 10-4 300 f=100Hz 900 2.5 4 0.8 1.5 BW=20Hz VCE = -10V NF IC = -100µA Noise Figure RG = 3KΩ Spot: Noise: f=1.0KHz BW=200Hz f=10KHz Dimensions in mm (inches) 1.8 1.5 1.5 2.5 BW=2KHz f=1.0KHz MECHANICAL DATA dB 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. TO-18 (TO-206AA) METAL PACKAGE Underside View 3 1 Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector 2 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8240 Issue 1 Page 3 of 3