Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 High transition frequency fT. (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Collector current IC –30 mA Collector power dissipation PC 250 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ■ Absolute Maximum Ratings 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –10V, IE = 0 – 0.1 ICEO VCE = –20V, IB = 0 –100 Emitter cutoff current IEBO VEB = –5V, IC = 0 Forward current transfer ratio hFE* VCE = –10V, IC = –1mA Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA – 0.1 V Base to emitter voltage VBE VCE = –10V, IC = –1mA – 0.7 V Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz Noise figure NF VCB = –10V, IE = 1mA, f = 5MHz 2.8 4.0 dB Reverse transfer impedance Zrb VCE = –10V, IC = –1mA, f = 2MHz 22 50 Ω 1.2 2.0 pF Collector cutoff current Common emitter reverse transfer capacitance *h FE Cre VCE = –10V, IC = –1mA, f = 10.7MHz –10 70 150 µA µA 220 300 MHz Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 1 Transistor 2SA838 PC — Ta IC — VCE –25 400 350 300 250 200 150 100 IB=–250µA –20 –200µA –15 –150µA –100µA –30 –10 –3 –1 Ta=75˚C 25˚C – 0.1 –50µA –25˚C – 0.03 50 0 80 120 160 200 0 –2 –4 –6 Ta=75˚C 25˚C –25˚C –60 –40 –20 0 – 0.1 – 0.3 –1 –3 –10 –30 Collector output capacitance Cob (pF) –100 f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 – 0.1 – 0.3 –100 Collector current IC (mA) –1 –3 –10 –30 –100 Collector to base voltage VCB (V) fT — IE 24 20 400 300 200 100 1 3 IC=–1mA f=10.7MHz Ta=25˚C 4 3 2 1 0 –1 –3 10 30 Emitter current IE (mA) 100 –10 –30 –100 NF — IE VCB=–10V f=100MHz Ta=25˚C 4 16 12 8 3 2 1 4 0.3 –100 5 Noise figure NF (dB) Power gain PG (dB) 500 –30 Collector to emitter voltage VCE (V) VCE=–10V f=100MHz Ta=25˚C VCB=–10V Ta=25˚C –10 5 PG — IC 600 –3 Cre — VCE 6 VCE=–10V –1 Collector current IC (mA) Cob — VCB –120 –80 – 0.01 – 0.1 – 0.3 –10 Collector to emitter voltage VCE (V) hFE — IC 0 0.1 –8 Common emitter reverse transfer capacitance Cre (pF) 40 Ambient temperature Ta (˚C) Forward current transfer ratio hFE IC/IB=10 – 0.3 –10 –5 0 Transition frequency fT (MHz) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 450 0 2 VCE(sat) — IC –100 –30 Collector current IC (mA) Collector power dissipation PC (mW) 500 0 – 0.1 – 0.3 –1 –3 –10 –30 Collector current IC (mA) –100 0 0.1 0.3 1 3 Emitter current IE (mA) 10