PANASONIC 2SA0921

Transistors
2SA0921 (2SA921)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
Unit: mm
4.0±0.2
5.1±0.2
5.0±0.2
• High collector-emitter voltage (Base open) VCEO
• Low noise voltage NV
0.7±0.2
■ Features
12.9±0.5
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
VCBO
−120
V
Collector-emitter voltage (Base open)
VCEO
−120
V
Emitter-base voltage (Collector open)
VEBO
−5
V
Collector current
IC
−20
mA
Peak collector current
ICP
−50
mA
Collector power dissipation
PC
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.45+0.15
–0.1
0.45+0.15
–0.1
2.5+0.6
–0.2
2.5+0.6
–0.2
1
2 3
2.3±0.2
Parameter
Collector-base voltage (Emitter open)
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−120
V
Collector-emitter voltage (Base open)
VCEO
IC = −1 mA, IB = 0
−120
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−5
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
Forward current transfer ratio *
hFE
VCE = −5 V, IC = −2 mA
VCE(sat)
IC = −20 mA, IB = −2 mA
Collector-emitter saturation voltage
Transition frequency
VCB = −5 V, IE = 2 mA, f = 200 MHz
fT
Noise voltage
Conditions
VCE = −40 V, IC = −1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
NV
Min
Typ
Max
Unit
V
180
−100
nA
−1
µA
700

− 0.6
200
V
MHz
150
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
hFE
180 to 360
260 to 520
360 to 700
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003
SJC00007BED
1
2SA0921
PC  Ta
IC  VCE
Ta = 25°C
200
100
−40 µA
−16
−35 µA
−30 µA
−12
−25 µA
−20 µA
−8
−15 µA
−10 µA
−4
0
40
80
120
160
0
200
Ambient temperature Ta (°C)
−2
1 000
0
−12
0
− 0.4
− 0.8
−10
−1
25°C Ta = 75°C
−25°C
−1.6
−2.0
fT  I E
320
VCE = −5 V
800
600
Ta = 75°C
25°C
400
−1.2
Base-emitter voltage VBE (V)
Transition frequency fT (MHz)
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
−10
−20
VCB = −5 V
Ta = 25°C
280
−25°C
200
240
200
160
120
80
40
− 0.01
− 0.1
−1
−10
0
− 0.1
−100
Cob  VCB
10
−10
−100
100
Noise voltage NV (mV)
8
7
6
5
4
3
2
VCE = −10 V
GV = 80 dB
Function = FLAT
80
Rg = 100 kΩ
60
22 kΩ
40
4.7 kΩ
20
1
0
−1
−10
−100
Collector-base voltage VCB (V)
0
− 0.01
− 0.1
Collector current IC (mA)
SJC00007BED
0
0.1
1
10
Emitter current IE (mA)
NV  IC
120
IE = 0
f = 1 MHz
Ta = 25°C
9
−1
Collector current IC (mA)
Collector current IC (mA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
−8
−25°C
−30
hFE  IC
IC / IB = 10
− 0.1
2
−6
Ta = 75°C
−40
Collector-emitter voltage VCE (V)
VCE(sat)  IC
−100
−4
25°C
−10
−5 µA
0
VCE = −5 V
−50
−45 µA
Collector current IC (mA)
Collector current IC (mA)
Collector power dissipation PC (mW)
300
−60
IB = −50 µA
−20
400
0
IC  VBE
−24
500
−1
100
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
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2002 JUL