Transistor 2SA1737 Silicon PNP epitaxial planer type For video amplifier Unit: mm ■ Absolute Maximum Ratings * 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● High transition frequency fT. Small collector output capacitance Cob. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 (Ta=25˚C) 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO –85 V Collector to emitter voltage VCEO –85 V Emitter to base voltage VEBO –4 V Peak collector current ICP –100 mA Collector current IC –50 mA Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1E Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Conditions min typ max Unit –10 µA Collector cutoff current ICEO VCE = –60V, IB = 0 Collector to base voltage VCBO IC = –100µA, IE = 0 –85 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –85 V Emitter to base voltage VEBO IE = –100µA, IC = 0 –4 V 60 Forward current transfer ratio hFE VCE = –5V, IC = –10mA Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA Transition frequency fT VCB = –5V, IE = 10mA, f = 200MHz 500 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF – 0.5 V 1 Transistor 2SA1737 PC — Ta IC — VCE 1.0 0.8 0.6 0.4 –120 VCE=–5V Ta=25˚C IB=–500µA 50 –450µA –400µA 40 –350µA –300µA 30 –250µA 20 –200µA –150µA 10 0.2 25˚C –100 Collector current IC (mA) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 IC — VBE 60 Collector current IC (mA) Collector power dissipation PC (W) 1.4 Ta=75˚C –25˚C –80 –60 –40 –20 –100µA –50µA 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 –10 –3 –1 – 0.1 Ta=75˚C –25˚C – 0.03 – 0.01 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (mA) Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2 12 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 1200 VCB=–5V f=200MHz Ta=25˚C VCE=–5V 200 1000 160 120 Ta=75˚C 25˚C 80 –25˚C 40 0 – 0.1 – 0.3 –1.2 Base to emitter voltage VBE (V) fT — IE 800 600 400 200 0 –1 –3 –10 –30 Collector current IC (mA) Cob — VCB 6 10 240 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –30 25˚C 8 hFE — IC –IC/–IB=10 – 0.3 6 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 4 Transition frequency fT (MHz) 0 –100 1 3 10 30 Emitter current IE (mA) 100