PANASONIC 2SB0938A

Power Transistors
2SB0938 (2SB938), 2SB0938A (2SB938A)
Silicon PNP epitaxial planar type Darlington
Unit: mm
Collector-base voltage
(Emitter open)
Unit
VCBO
−60
V
2
−80
2SB0938A
14.4±0.5
3.0+0.4
–0.2
4.4±0.5
(7.6)
Rating
2SB0938
1.5+0
–0.4
1
Symbol
0 to 0.4
0.8±0.1 R = 0.5
R = 0.5
2.54±0.3
1.0±0.1
1.4±0.1
0.4±0.1
5.08±0.5
(8.5)
(6.0)
1.3
3
(1.5)
■ Absolute Maximum Ratings TC = 25°C
Parameter
1.0±0.1
4.4±0.5
• High forward current transfer ratio hFE
• High-speed switching
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
6.0±0.2
2.0±0.5
■ Features
3.4±0.3
10.0±0.3
1.5±0.1
For power amplification and switching
Complementary to 2SD1261, 2SD1261A
8.5±0.2
(6.5)
−60
Collector-emitter voltage 2SB0938
(Base open)
2SB0938A
VCEO
V
Emitter-base voltage (Collector open)
VEBO
−5
V
Collector current
IC
−4
A
Note) Self-supported type package is also prepared.
Peak collector current
ICP
−8
A
Internal Connection
Collector power dissipation
PC
40
W
1: Base
2: Collector
3: Emitter
N-G1 Package
−80
Ta = 25°C
1.3
C
B
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Collector-emitter voltage
(Base open)
Symbol
2SB0938
Conditions
IC = −30 mA, IB = 0
VCEO
Collector-base cutoff
current (Emitter open)
2SB0938
Collector-emitter cutoff
current (Base open)
2SB0938
Collector-emitter saturation voltage
−60
Unit
V
VBE
VCE = −3 V,IC = −3 A
−2.5
V
VCB = −60 V,IE = 0
−200
µA
VCB = −80 V,IE = 0
−200
VCE = −30 V,IB = 0
−500
ICEO
VCE = −40 V,IB = 0
−500
IEBO
VEB = −5 V,IC = 0
−2
2SB09378
Forward current transfer ratio
Max
ICBO
2SB0938A
Emitter-base cutoff current (Collector open)
Typ
−80
2SB0938A
Base-emitter voltage
Min
hFE1
VCE = −3 V, IC = −0.5 A
1 000
hFE2 *
VCE = −3 V, IC = −3 A
2 000
VCE(sat)
IC = −3 A, IB = −12 mA
−2
IC = −5 A, IB = −20 mA
−4
µA
mA

10 000
V
Transition frequency
fT
VCE = −10 V, IC = −0.5 A, f = 1 MHz
15
MHz
Turn-on time
ton
IC = −3 A,
0.3
µs
Strage time
tstg
IB1 = −12 mA, IB2 = 12 mA
2
µs
Fall time
tf
VCC = −50 V
0.5
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
hFE1
Publication date: March 2003
Q
P
2 000 to 5 000 4 000 to 10 000
Note) The part number in the parenthesis shows conventional part number.
SJD00019BED
1
2SB0938, 2SB0938A
PC  Ta
IC  VCE
40
(1)
TC=25˚C
−5
30
20
10
VCE=–3V
IB=–3.0mA
–2.5mA
–2.0mA
–1.5mA
–1.0mA
−4
−8
Collector current IC (A)
(1)TC=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
(PC=1.3W)
Collector current IC (A)
Collector power dissipation PC (W)
IC  VBE
−10
−6
50
–0.5mA
−3
–0.4mA
−2
–0.3mA
–0.2mA
TC=100˚C
–25˚C
−4
−2
−1
(2)
25˚C
−6
(3)
0
0
40
80
120
160
−1
0
VCE(sat)  IC
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
TC=100˚C
25˚C
−1
–25˚C
− 0.1
−1
VCE=–3V
TC=100˚C
25˚C
104
–25˚C
103
102
− 0.01
−10
− 0.1
−1
−10
Thermal resistance Rth (°C/W)
Collector current IC (A)
t=10ms
t=300ms
2SB0938A
2SB0938
− 0.1
−10
−100
103
102
10
1
− 0.1
−1
−10
−100
−1 000
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
(1)
102
(2)
10
1
10−1
10−2
10−4
10−3
10−2
10−1
1
Time t (s)
Collector-emitter voltage VCE (V)
2
IE=0
f=1MHz
TC=25˚C
Rth  t
t=1ms
SJD00019BED
−3.2
Collector-base voltage VCB (V)
103
−10 ICP
− 0.01
−1
−2.4
104
Collector current IC (A)
Non repetitive pulse
TC=25˚C
−1
−1.6
Cob  VCB
Safe operation area
IC
− 0.8
0
Base-emitter voltage VBE (V)
105
Collector current IC (A)
−100
0
−5
hFE  IC
−10
− 0.1
−4
106
IC/IB=250
− 0.01
− 0.01
−3
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
−100
−2
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
0
10
102
103
104
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and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
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notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
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2002 JUL