NTE916 Integrated Circuit High Current, NPN Transistor Array, Common Emitter Description: The NTE916 is a high current transistor array in a 16–Lead DIP type package consisting of seven silicon NPN transistors on a common monolithic substrate connected in a common–emitter configuration designed for directly driving seven–segment displays and light–emitting diodes (LED) displays. This device is also well suited for a variety of other drive applications including relay control and thyristor firing. Features: D Seven Transistors Permit a Wide Range of Applications D High Collector Current: IC = 100mA Max D Low Collector–Emitter Saturation Voltage: VCE(sat) = 400mV Typ @ 50mA Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation (Total Package), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Per Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derate Linearly Above 55°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/°C Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Lead Temperature (During Soldering, 1/16” from case, 10sec max), TL . . . . . . . . . . . . . . . . . +265°C The Following Ratings Apply for Each Transistor in the Device Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Substrate Voltage (Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Note 1. The collector of each transistor of the NTE916 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative that any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors, the substrate terminal (Pin5) should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can be used to establish a signal ground. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Breakdown Voltage V(BR)CES IC = 500µA, IE = 0 20 60 – V Collector–Substrate Breakdown Voltage V(BR)CIO ICI = 500µA, IE = 0, IB = 0 20 60 – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 16 24 – V Emitter–Base Breakdown Voltage V(BR)EBO IC = 500µA 5.0 6.9 – V VCE = 500mV, IC = 30mA 30 68 – VCE = 800mV, IC = 50mA 40 70 – DC Forward Current Transfer Ratio hFE Base–Emitter Saturation Voltage VBE(sat) IC = 30mA, IB = 1mA – 0.87 1.0 V Collector–Emitter Saturation Voltage VCE(sat) IC = 30mA, IB = 1mA – 0.27 0.5 V IC = 50mA, IB = 5mA – 0.4 0.7 V ICEO VCE = 10V, IB = 0 – – 10 µA ICBO VCB = 10V, IE = 0 – – 1 µA Collector Cutoff Current Pin Connection Diagram Collector Q1 1 16 Base Q1 Collector Q2 2 Base Q2 3 15 Common Emitter 14 Collector Q3 Collector Q5 4 13 Base Q3 Substrate 5 Base Q5 6 Collector Q7 7 Base Q7 8 16 12 Collector Q4 11 Base Q4 10 Base Q6 9 Collector Q6 9 .260 (6.6) Max 1 8 .300 (7.62) .785 (19.9) Max .200 (5.08) Max .245 (6.22) Min .100 (2.54) .700 (17.7)