NTMS4705N Power MOSFET 30 V, 12 A, Single N-Channel, SO-8 Features •Low RDS(on) •Low Gate Charge •Standard SO-8 Single Package •Pb-Free Package is Available http://onsemi.com V(BR)DSS RDS(ON) TYP ID MAX (Note 1) Applications •Notebooks, Graphics Cards •Synchronous Rectification •High Side Switch •DC-DC Converters 8.0 mW @ 10 V 30 V 12 A 10.5 mW @ 4.5 V N-Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS ±20 V ID 10 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C 7.2 t v 10 s TA = 25°C 12 Steady State TA = 25°C PD TA = 25°C ID t v 10 s Steady State Power Dissipation (Note 2) 1.52 W TA = 85°C tp = 10 ms Operating Junction and Storage Temperature Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 V, VGS = 10 V, Peak IL = 7.5 A, L = 10 mH, RG = 25 W) 7.4 A PD 0.85 W IDM 36 A TJ, Tstg -55 to 150 °C IS 3.0 A EAS 210 mJ TL 260 °C Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Symbol Value Unit Junction-to-Ambient – Steady State (Note 1) RqJA 82 °C/W Junction-to-Ambient – t v 10 s (Note 1) RqJA 55 Junction-to-Ambient – Steady State (Note 2) RqJA 147 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2007 SO-8 CASE 751 STYLE 12 Source Source Source Gate 8 Drain Drain Drain Drain Top View 4705N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS Parameter 1 1 5.3 Source Current (Body Diode) October, 2007 - Rev. 3 MARKING DIAGRAM/ PIN ASSIGNMENT 2.3 TA = 25°C Pulsed Drain Current S 4705N AYWWG G Continuous Drain Current (Note 2) G 1 Device Package Shipping† NTMS4705NR2 SO-8 2500/Tape & Reel NTMS4705NR2G SO-8 (Pb-Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMS4705N/D NTMS4705N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 15 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 50 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA ±100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) Forward Transconductance gFS 1.0 2.5 5.0 V mV/°C VGS = 10 V, ID = 12 A 8.0 10 mW VGS = 4.5 V, ID = 10 A 10.5 14 VDS = 15 V, ID = 10 A 19 S 1078 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, f = 1.0 MHz, VDS = 24 V 460 127 Total Gate Charge QG(TOT) 11 Threshold Gate Charge QG(TH) 1.1 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 5.8 RG 1.76 td(on) 7.8 tr 4.7 Gate Resistance VGS = 4.5 V, VDS = 15 V, ID = 10 A 18 nC 3.5 W 2.1 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(off) VGS = 10 V, VDD = 15 V, ID = 1.0 A, RG = 3.0 W tf ns 27 17 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = 3.0 A TJ = 25°C 0.73 TJ = 125°C 0.51 tRR 38 Charge Time ta 17 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 100 A/ms, IS = 3.0 A QRR http://onsemi.com 2 V ns 21 30 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 1.0 nC NTMS4705N TYPICAL PERFORMANCE CURVES 25 3.2 V 20 15 2.6 V 10 5 2.4 V 30 24 18 TJ = 125°C 12 TJ = 25°C 6 0 1 2 3 4 6 5 7 9 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 1 3 4 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.07 TJ = 25°C ID = 12 A 0.06 0.05 0.04 0.03 0.02 0.01 0 0 5 2.5 7.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 1.8 TJ = 25°C 0.014 VGS = 4.5 V 0.010 VGS = 10 V 0.006 0.002 4 8 16 12 20 ID, DRAIN CURRENT (AMPS) 24 Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1000000 VGS = 0 V ID = 12 A VGS = 4.5 V IDSS, LEAKAGE (nA) 1.6 5 0.018 Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VDS ≥ 10 V 36 TJ = -55°C 0 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 42 TJ = 25°C 3V ID, DRAIN CURRENT (AMPS) 5V 3.8 V 3.4 V RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 30 1.4 1.2 1 TJ = 150°C 10000 TJ = 125°C 100 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTMS4705N TYPICAL PERFORMANCE CURVES C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2500 TJ = 25°C 2000 Ciss 1500 Ciss 1000 Crss Coss 500 Crss 0 10 5 0 VGS 5 10 15 20 5 QT 4 2 1 ID = 10 A TJ = 25°C 0 3 VDS Figure 7. Capacitance Variation 1000 15 18 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 12 A VGS = 4.5 V 100 tr tf td(off) td(on) 10 VGS = 0 V TJ = 25°C 15 12 9 6 3 0 1 10 RG, GATE RESISTANCE (OHMS) 100 0.2 0.6 0.8 0.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) 12 6 9 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 VGS 3 0 25 QGD QGS Figure 10. Diode Forward Voltage vs. Current 220 ID = 10 A 200 180 160 140 120 100 80 60 40 20 0 25 1.0 100 50 75 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 150 NTMS4705N PACKAGE DIMENSIONS SOIC-8 CASE 751-07 ISSUE AJ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. -XA 8 5 S B 0.25 (0.010) M Y M 1 4 K -YG C N X 45 _ DIM A B C D G H J K M N S SEATING PLANE -Z- 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S STYLE 12: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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