ONSEMI NTQD6968N

NTQD6968N
Power MOSFET
7.0 A, 20 V, Common Drain,
Dual N−Channel, TSSOP−8
Features
•
•
•
•
•
•
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Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
3 mm Wide TSSOP−8 Surface Mount Package
High Speed, Soft Recovery Diode
TSSOP−8 Mounting Information Provided
V(BR)DSS
RDS(on) TYP
ID MAX
20 V
17 m @ 4.5 V
7.0 A
N−Channel
Applications
• Battery Protection Circuits
N−Channel
D
D
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
Vdc
Gate−to−Source Voltage − Continuous
VGS
12
Vdc
ID
ID
Adc
Rating
Drain Current − Continuous @ TA 25°C (Note 1)
Drain Current − Continuous @ TA 70°C (Note 1)
Drain Current − Pulsed (Note 3)
IDM
7.0
5.6
20
Total Power Dissipation @ TA 25°C (Note 1)
PD
1.81
W
Drain Current − Continuous @ TA 25°C (Note 2)
Drain Current − Continuous @ TA 70°C (Note 2)
Drain Current − Pulsed (Note 3)
ID
ID
Adc
IDM
6.2
4.9
18
Total Power Dissipation @ TA 25°C (Note 2)
PD
1.39
W
Operating and Storage Temperature Range
TJ, Tstg
−55 to
+150
°C
Thermal Resistance −
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes for 10 seconds
RJA
TL
G1
G2
S1
S2
TSSOP−8
CASE 948S
PLASTIC
8
1
MARKING DIAGRAM
& PIN ASSIGNMENT
°C/W
69
90
1
D
S1
S1
2
3
G1
4
E68
YWW
N
8
7
6
5
D
S2
S2
G2
Top View
E68
Y
WW
N
°C
260
1. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz. Cu 0.06″ thick single
sided), t ≤ 10 sec.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz. Cu 0.06″ thick single
sided), Steady State.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
= Device Code
= Year
= Work Week
= MOSFET
ORDERING INFORMATION
Device
Package
Shipping†
NTQD6968NR2
TSSOP−8
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 1
1
Publication Order Number:
NTQD6968N/D
NTQD6968N
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
20
−
−
16
−
−
−
−
−
−
1.0
10
−
−
±100
0.6
−
0.75
3.0
1.2
−
−
−
−
0.017
0.022
0.022
0.022
0.030
0.030
gFS
−
19.2
−
Mhos
pF
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Collector Current
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current
(VGS = ±12 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
Adc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−State Resistance
(VGS = 4.5 Vdc, ID = 7.0 Adc)
(VGS = 2.5 Vdc, ID = 7.0 Adc)
(VGS = 2.5 Vdc, ID = 3.5 Adc)
RDS(on)
Forward Transconductance (VDS = 10 Vdc, ID = 7.0 Adc)
Vdc
mV/°C
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Transfer Capacitance
Ciss
−
630
−
Coss
−
260
−
Crss
−
95
−
td(on)
−
8.0
−
tr
−
25
−
td(off)
−
60
−
tf
−
65
−
Qtot
−
12.5
17
Qgs
−
1.0
−
Qgd
−
5.0
−
VSD
−
0.82
1.2
Vdc
trr
−
35
−
ns
ta
−
15
−
tb
−
20
−
QRR
−
0.02
−
SWITCHING CHARACTERISTICS (Notes 4 and 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 16 Vdc, ID = 7.0 Adc,
VGS = 4.5 Vdc, RG = 6.0 )
Fall Time
Gate Charge
(VDS = 16 Vdc,
Vdc
VGS = 4.5 Vdc,
ID = 7.0
7 0 Adc)
ns
nC
BODY−DRAIN DIODE RATINGS (Note 4)
Forward On−Voltage
(IS = 7.0 Adc, VGS = 0 Vdc)
Reverse Recovery Time
(IS = 7.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
Reverse Recovery Stored Charge
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
5. Switching characteristics are independent of operating junction temperature.
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2
C
NTQD6968N
14
14
1.8 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
12
VDS ≥ 10 V
TJ = 25°C
VGS = 10, 5, 3 and 2.2 V resp.
1.6 V
10
8
6
1.4 V
4
2
1.2 V
0
12
10
8
6
TJ = 125°C
4
TJ = 25°C
2
TJ = −55°C
0
0
1
1.2 1.4 1.6 1.8
0.2 0.4 0.6 0.8
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
1.5
2
1
0.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω)
Figure 1. On−Region Characteristics
0.03
ID = 7.0 A
TJ = 25°C
0.02
0.01
0
0
2
6
4
8
10
0.04
TJ = 25°C
0.035
0.03
0.025
VGS = 2.5 V
0.02
0.015
0.01
VGS = 4.5 V
2
4
6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
8
10
12
14
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100000
2
VGS = 0 V
ID = 3.5 A
VGS = 4.5 V
1.5
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.5
10000
1
0.5
0
−50
TJ = 150°C
1000
TJ = 125°C
100
−25
0
25
50
75
100
125
150
0
4
8
12
16
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
20
3000
VDS = 0 V
C, CAPACITANCE (pF)
2500
VGS = 0 V
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
NTQD6968N
TJ = 25°C
Ciss
2000
1500
Crss
1000
Ciss
500
Coss
Crss
0
10
5
VGS
0
VDS
5
10
15
20
5
QT
4
VGS
3
2 Q1
Q2
1
ID = 7.0 A
TJ = 25°C
0
0
2.5
Figure 7. Capacitance Variation
10
12.5
Figure 8. Gate−to−Source Voltage
versus Total Charge
1.4
1000
100
IS, SOURCE CURRENT (AMPS)
VDD = 16 V
ID = 7.0 A
VGS = 4.5 V
t, TIME (ns)
7.5
Qg, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
tf
td(off)
tr
10
1
5
td(on)
1
10
VGS = 0 V
TJ = 25°C
1.2
1
0.8
0.6
0.4
0.2
0
0.5
100
RG, GATE RESISTANCE (Ω)
0.575
0.55
0.525
0.6
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
ID, DRAIN CURRENT (AMPS)
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
100 µs
10
1 ms
di/dt
IS
10 ms
1
trr
ta
0.1
0.01
0.1
tb
TIME
dc
RDS(on) Limit
Thermal Limit
Package Limit
1
0.25 IS
tp
IS
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Diode Reverse Recovery Waveform
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4
NTQD6968N
R(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
10
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 13. Thermal Response
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5
1
10
100
NTQD6968N
PACKAGE DIMENSIONS
TSSOP−8
CASE 948S−01
PLASTIC
ISSUE O
8x
0.20 (0.008) T U
K REF
0.10 (0.004)
S
2X
L/2
8
B
−U−
1
S
J J1
4
PIN 1
IDENT
S
T U
5
L
0.20 (0.008) T U
M
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS. MOLD
FLASH OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT
EXCEED 0.25 (0.010) PER SIDE.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
ÉÉÉÉ
ÇÇÇ
ÉÉÉÉ
ÇÇÇ
ÉÉÉÉ
K1
K
A
−V−
SECTION N−N
−W−
C
0.076 (0.003)
D
−T− SEATING
DETAIL E
G
PLANE
P
0.25 (0.010)
N
M
N
P1
F
DETAIL E
SOLDERING FOOTPRINT*
0.038
0.95
0.252
6.4
0.177
4.5
0.018
0.45
0.026
0.65
inches
mm
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
DIM
A
B
C
D
F
G
J
J1
K
K1
L
M
P
P1
MILLIMETERS
MIN
MAX
2.90
3.10
4.30
4.50
−−−
1.10
0.05
0.15
0.50
0.70
0.65 BSC
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0
8
−−−
2.20
−−−
3.20
INCHES
MIN
MAX
0.114
0.122
0.169
0.177
−−−
0.043
0.002
0.006
0.020
0.028
0.026 BSC
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0
8
−−−
0.087
−−−
0.126
NTQD6968N
Notes
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7
NTQD6968N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
local Sales Representative.
NTQD6968N/D