Transistor 2SC3526(H) Silicon NPN epitaxial planer type For display video output Unit: mm 5.9±0.2 4.9±0.2 ● High transition frequency fT. Small collector output capacitance Cob. Wide current range. 0.7±0.1 +0.3 ● 0.7–0.2 ● 8.6±0.2 ■ Features Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage VCER* 100 V +0.2 +0.2 0.45–0.1 0.45–0.1 1.27 Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 3.5 V Peak collector current ICP 300 mA Collector current IC 150 mA Collector power dissipation PC 1.0 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C *R 1.27 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package EB = 470Ω ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Conditions min typ VCE = 35V, IB = 0 max Unit 10 µA Collector cutoff current ICEO Collector to base voltage VCBO IC = 100µA, IE = 0 110 V Collector to emitter voltage VCER IC = 500µA, RBE = 470Ω 100 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 100µA, IC = 0 3.5 V 100mA* Forward current transfer ratio hFE VCE = 5V, IC = Collector to emitter saturation voltage VCE(sat) IC = 150mA, IB = 15mA* Transition frequency Collector output capacitance * (Ta=25˚C) 3.2 ■ Absolute Maximum Ratings 13.5±0.5 2.54±0.15 20 0.5 V fT1 VCB = 10V, IE = –10mA, f = 200MHz 300 MHz fT2 VCB = 10V, IE = –110mA, f = 200MHz 350 MHz Cob VCB = 30V, IE = 0, f = 1MHz 3 pF Pulse measurement 1 2SC3526(H) Transistor PC — Ta IC — VCE 1.6 IC — VBE 240 120 VCE=5V 1.2 1.0 0.8 0.6 0.4 IB=5.0mA 4.5mA 160 4.0mA 3.5mA 120 3.0mA 2.5mA 80 2.0mA 1.5mA 40 Ta=75˚C –25˚C 80 60 40 20 1.0mA 0.2 25˚C 100 Collector current IC (mA) 200 Collector current IC (mA) Collector power dissipation PC (W) Ta=25˚C 1.4 0.5mA 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 10 3 1 Ta=75˚C 25˚C –25˚C 0.1 0.03 0.01 30 100 300 1000 Collector current IC (mA) Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 0 0.2 0.4 0.6 1.0 600 100 80 60 Ta=75˚C 25˚C 40 –25˚C 20 0 0.1 0.8 Base to emitter voltage VBE (V) fT — I E 0.3 1 3 10 30 Collector current IC (mA) Cob — VCB 6 12 VCE=5V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 30 10 10 120 IC/IB=10 3 8 hFE — IC 100 1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 4 VCB=10V Ta=25˚C Transition frequency fT (MHz) 0 100 500 400 300 200 100 0 –1 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA)