ETC 2SD2260

Transistor
2SD2260
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
Unit: mm
0.15
0.65 max.
14.5±0.5
●
High collector breakdown voltage.
Low collector to emitter saturation voltage VCE(sat).
Allowing supply with the radial taping.
1.0
●
0.85
●
0.8
■ Features
1.05 2.5±0.1
(1.45)
±0.05
0.8
4.0
3.5±0.1
6.9±0.1
0.7
+0.1
2.5±0.5
2.5±0.5
(Ta=25˚C)
+0.1
■ Absolute Maximum Ratings
0.45–0.05
0.45–0.05
Symbol
Ratings
Unit
Collector to base voltage
VCBO
400
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
100
mA
Collector current
IC
70
mA
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
2
3
2.5±0.1
1
Parameter
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
1.2±0.1
0.65
max.
0.45+–0.1
0.05
(HW type)
■ Electrical Characteristics
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
ICBO
VCB = 100V, IE = 0
2
µA
ICEO
VCE = 100V, IB = 0
2
µA
Collector to emitter voltage
VCEO
IC = 100µA, IB = 0
400
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
V
Forward current transfer ratio
hFE
*
VCE = 10V, IC = 5mA
60
Collector to emitter saturation voltage
VCE(sat)
IC = 50mA, IB = 5mA
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
Collector cutoff current
*h
FE
220
0.4
50
1.2
80
4
V
MHz
10
pF
Rank classification
Rank
Q
R
hFE
60 ~ 150
100 ~ 220
1
2SD2260
Transistor
PC — Ta
IC — VCE
120
500
400
300
200
80
0.6mA
60
0.4mA
40
0.2mA
25˚C
100
20
Ta=75˚C
–25˚C
80
60
40
20
100
0
80
120
160
200
0
0
2
Collector to emitter saturation voltage VCE(sat) (V)
VCE=10V
Ta=25˚C
100
80
60
40
20
0
0.8
8
10
0
0.4
1.2
1.6
2.0
2.5
10
3
1
Ta=75˚C
0.3
25˚C
–25˚C
0.1
2.0
1.5
1.0
0.5
0.03
0.01
0.01 0.03
0
0.1
0.3
1
3
10
0
0.2
0.4
0.6
fT — I E
VCB=250V
VCB=10V
Ta=25˚C
180
25˚C
–25˚C
60
140
103
120
ICBO (Ta)
ICBO (Ta=25˚C)
Transition frequency fT (MHz)
Ta=75˚C
1.0
ICBO — Ta
104
VCE=10V
0.8
Base to emitter voltage VBE (V)
160
240
2.0
VCE=10V
Ta=25˚C
30
Collector current IC (mA)
300
1.6
3.0
IC/IB=10
hFE — IC
120
1.2
IB — VBE
100
Base current IB (mA)
360
0.8
Base to emitter voltage VBE (V)
VCE(sat) — IC
120
0.4
6
Collector to emitter voltage VCE (V)
IC — IB
0
4
Base current IB (mA)
40
Ambient temperature Ta (˚C)
Collector current IC (mA)
IB=2.0mA
Collector current IC (mA)
100
600
0
Forward current transfer ratio hFE
VCE=10V
Ta=25˚C
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
700
0
100
80
60
40
102
10
20
0
0.01 0.03
0.1
0.3
1
3
Collector current IC (mA)
2
IC — VBE
120
Collector current IC (mA)
Collector power dissipation PC (mW)
800
10
0
–1
1
–3
–10
–30
Emitter current IE (mA)
–100
0
40
80
120
160
200
Ambient temperature Ta (˚C)
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2001 MAR