Transistor 2SD0965 (2SD965) Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.0±0.2 ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V Peak collector current ICP 8 A Collector current IC 5 A Collector power dissipation PC 0.75 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 0.7±0.2 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. 0.7±0.1 12.9±0.5 ● 0.45+0.15 Ð0.1 0.45+0.15 Ð0.1 2.5+0.6 Ð0.2 2.5+0.6 Ð0.2 1 2 3 2.3±0.2 ● 5.1±0.2 ■ Features 4.0±0.2 1:Emitter 2:Collector 3:Base EIAJ:SC–43A TO-92-A1 Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 1.0 µA Emitter cutoff current IEBO VEB = 7V, IC = 0 0.1 µA Collector to emitter voltage VCEO IC = 1mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 hFE1*1 VCE = 2V, IC = 0.5A*2 230 hFE2 VCE = 2V, IC = 2A*2 150 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.1A*2 Transition frequency fT VCB = 6V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz Collector cutoff current Forward current transfer ratio 20 V 7 V 600 1 150 MHz 50 *2 *1h FE1 V pF Pulse measurement Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 Note.) The Part number in the Parenthesis shows conventional part number. 568 2SD0965 Transistor PC — Ta IC — VCE 1.0 IC — VBE 2.4 6 VCE=2V IB=7mA 0.6 0.4 0.2 6mA 1.6 5mA 4mA 1.2 3mA 0.8 2mA 0.4 0 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.4 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 0.8 1.6 2.0 3 0 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.1 0.3 1 3 250 200 150 100 50 Emitter current IE (A) Ta=75˚C 400 25˚C 300 –25˚C 200 100 –10 0.1 0.3 1 3 10 Area of safe operation (ASO) IE=0 f=1MHz Ta=25˚C 80 60 40 Single pulse Ta=25˚C 30 10 ICP IC 3 t=10ms t=1s 1 0.3 0.1 20 0.03 0 –3 2.0 VCE=2V Ta=25˚C 100 Collector current IC (A) Collector output capacitance Cob (pF) 300 1.6 Collector current IC (A) Cob — VCB 350 1.2 500 0 0.01 0.03 10 100 VCB=6V Ta=25˚C 0.8 600 Collector current IC (A) fT — IE –1 0.4 Base to emitter voltage VBE (V) hFE — IC 30 0.01 0.01 0.03 10 400 0 – 0.01 – 0.03 – 0.1 – 0.3 2 2.4 IC/IB=30 Collector current IC (A) Transition frequency fT (MHz) 1.2 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 3 0.1 3 VBE(sat) — IC IC/IB=30 0.3 4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 –25˚C 0 0 Forward current transfer ratio hFE 20 Ta=75˚C 1 1mA 0 0 25˚C 5 Collector current IC (A) 2.0 0.8 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C 1 3 10 30 100 Collector to base voltage VCB (V) 0.01 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 569 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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