PESD5V0S2BT Low capacitance bi-directional double ESD protection diode in SOT23 package Rev. 02 — 27 May 2004 Product data sheet 1. Product profile 1.1 General description Low capacitance bi-directional double ESD protection diode in the small SOT23 plastic package designed to protect 2 data lines from the damage caused by Electro Static Discharge (ESD) and other transients. 1.2 Features ■ ■ ■ ■ ■ ■ ■ ■ Bi-directional ESD protection of 2 lines Low diode capacitance Max. peak pulse power: Ppp = 130 W at tp = 8/20 µs Low clamping voltage: VCL(R) = 14 V at Ipp = 12 A Ultra low leakage current: IRM = 5 nA at VRWM = 5 V ESD protection > 30 kV IEC 61000-4-2; level 4 (ESD) IEC-61000-4-5 (surge); Ipp = 12 A at tp = 8/20 µs. 1.3 Applications ■ ■ ■ ■ ■ Cellular handsets and accessories Portable electronics Computers and peripherals Communication systems Audio and video equipment. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter VRWM reverse stand-off voltage Cd diode capacitance number of protected lines Conditions f = 1 MHz; VR = 0 V Min Typ Max Unit - 5 - V - 35 - pF - 2 - PESD5V0S2BT Philips Semiconductors Low capacitance bi-directional double ESD protection diode 2. Pinning information Table 2: Discrete Pinning Pin Description Simplified outline 1 cathode 1 2 cathode 2 3 double cathode Symbol 3 1 3 1 2 2 SOT23 sym031 3. Ordering information Table 3: Ordering information Type number Package Name PESD5V0S2BT - Description Version plastic surface mounted package; 3 leads SOT23 4. Marking Table 4: Marking Type number Marking code [1] PESD5V0S2BT *G5 [1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Ppp peak pulse power 8/20 µs pulse [1] [2] - 130 W Ipp peak pulse current 8/20 µs pulse [1] [2] - 12 A Tj junction temperature - 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Per diode [1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1. [2] Measured between pins 1 to 3 or pin 2 to 3. 9397 750 13344 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 27 May 2004 2 of 11 PESD5V0S2BT Philips Semiconductors Low capacitance bi-directional double ESD protection diode Table 6: Symbol ESD ESD maximum ratings Parameter Conditions electro static discharge capability IEC 61000-4-2 (contact discharge) [1] [2] HBM MIL-Std 883 Value Unit 30 kV 10 kV [1] Device stressed with ten non-repetitive Electro Static Discharge (ESD) pulses; see Figure 2. [2] Measured between pins 1 to 3 or pin 2 to 3. Table 7: ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD); see Figure 2 > 15 kV (air); > 8 kV (contact) HBM MIL-Std 883; class 3 > 4 kV 001aaa631 Ipp 001aaa630 120 100 % 90 % 100 % Ipp; 8 µs Ipp (%) 80 e−t 50 % Ipp; 20 µs 40 10 % tr = 0.7 to 1 ns 0 0 10 20 30 30 ns 40 t (µs) Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5. 60 ns Fig 2. ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2. 9397 750 13344 Product data sheet t © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 27 May 2004 3 of 11 PESD5V0S2BT Philips Semiconductors Low capacitance bi-directional double ESD protection diode 6. Characteristics Table 8: Electrical characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 5 V - 5 100 nA Per diode VRWM reverse stand-off voltage IRM reverse leakage current VRWM = 5 V V(CL)R clamping voltage Ipp = 1 A [1] [2] - - 10 V Ipp = 12 A [1] [2] - - 14 V VBR breakdown voltage IR = 1 mA 5.5 - 9.5 V rdiff differential resistance IR = 1 mA - - 50 Ω Cd diode capacitance f = 1 MHz; VR = 0 V - 35 45 pF [1] Non-repetitive current pulse 8/20 µs exponential decay waveform, see Figure 3. [2] Measured from pin 1 to 3 or pin 2 to 3. 001aaa632 103 001aaa633 1.2 Ppp Ppp(25 °C) Ppp (W) 0.8 102 0.4 10 1 10 102 103 104 0 0 50 t p (µs) 100 150 200 Tj (°C) Tamb = 25 °C. Tamb = 25 °C. tp = 8/20 µs exponential decay waveform; see Figure 1. Fig 3. Peak pulse power dissipation as a function of pulse time; typical values. Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values. 9397 750 13344 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 27 May 2004 4 of 11 PESD5V0S2BT Philips Semiconductors Low capacitance bi-directional double ESD protection diode 001aaa634 38 001aaa635 102 Cd (pF) IR IR(85 °C) 34 10 30 1 26 10−1 22 0 1 2 3 4 5 75 100 125 VR (V) Tamb = 25 °C; f = 1 MHz. 150 IR < 1 nA measured at Tamb = 25 °C. Fig 5. Diode capacitance as a function of reverse voltage; typical values. Fig 6. Relative variation of reverse leakage current as a function of junction temperature; typical values. 9397 750 13344 Product data sheet Tj (°C) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 27 May 2004 5 of 11 PESD5V0S2BT Philips Semiconductors Low capacitance bi-directional double ESD protection diode ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ D.U.T.: PESD5V0S2BT IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 10 V/div horizontal scale = 50 ns/div GND GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC61000-4-2 network) vertical scale = 10 V/div horizontal scale = 50 ns/div clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) coa006 Fig 7. ESD clamping test set-up and waveforms. 9397 750 13344 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 27 May 2004 6 of 11 PESD5V0S2BT Philips Semiconductors Low capacitance bi-directional double ESD protection diode 7. Application information The PESD5V0S2BT is designed for the bi-directional protection of 2 lines from the damage caused by Electro Static Discharge (ESD) and surge pulses. The PESD5V0S2BT may be used on lines where the signal polarities are above and below ground. The PESD5V0S2BT provides a surge capability of 130 Watts peak Ppp per line for an 8/20 µs waveform. line 1 to be protected line 2 to be protected PESD5V0S2BT GND 001aaa636 Fig 8. Typical application for bi-directional protection of two lines. Circuit board layout and protection device placement: Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESD5V0S2BT as close to the input terminal or connector as possible. 2. The path length between the PESD5V0S2BT and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all printed-circuit board conductive loops including power and group loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias. 9397 750 13344 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 27 May 2004 7 of 11 PESD5V0S2BT Philips Semiconductors Low capacitance bi-directional double ESD protection diode 8. Package outline Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB Fig 9. Package outline. 9397 750 13344 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 27 May 2004 8 of 11 PESD5V0S2BT Philips Semiconductors Low capacitance bi-directional double ESD protection diode 9. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Order number Supersedes PESD5V0S2BT_2 20040527 Product data - 9397 750 13344 PESD5V0S2BT_1 PESD5V0S2BT_1 20040517 Product data - 9397 750 12901 - 9397 750 13344 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 27 May 2004 9 of 11 PESD5V0S2BT Philips Semiconductors Low capacitance bi-directional double ESD protection diode 10. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions 12. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 13344 Product data sheet © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 02 — 27 May 2004 10 of 11 PESD5V0S2BT Philips Semiconductors Low capacitance bi-directional double ESD protection diode 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 27 May 2004 Document order number: 9397 750 13344 Published in The Netherlands