Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed: EAS > 20mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 +0.5 13.7–0.2 ■ Absolute Maximum Ratings (TC = 25°C) Parameter Symbol * Ratings Unit VDSS 800 V Gate to Source voltage VGSS ±30 V DC ID ±3 A Pulse IDP ±6 A EAS* 20 mJ Avalanche energy capacity Allowable power TC = 25°C dissipation Ta = 25°C 50 PD 2.6±0.1 1.2±0.15 1.45±0.15 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 Drain to Source breakdown voltage Drain current 3.0±0.2 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 4.1±0.2 8.0±0.2 Solder Dip 15.0±0.3 ■ Applications 7 1 2 3 1: Gate 2: Drain 3: Source TO-220E Package W 2 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C L = 4.5mH, IL = 3A, VDD = 50V, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 640V, VGS = 0 0.1 mA Gate to Source leakage current IGSS VGS = ±30V, VDS = 0 ±1 µA Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 Gate threshold voltage Vth VDS = 25V, ID = 1mA Drain to Source ON-resistance RDS(on) VGS = 10V, ID = 2A Forward transfer admittance | Yfs | VDS = 25V, ID = 2A Diode forward voltage VDSF IDR = 3A, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 20V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) td(on) Rise time tr VGS = 10V, ID = 2A Fall time tf VDD = 200V, RL = 100Ω Turn-off time (delay time) td(off) Thermal resistance between channel and case Rth(ch-c) 800 V 2 3.2 1.5 5 V 4 Ω 2.4 S −1.6 V 730 pF 90 pF 40 pF 35 ns 60 ns 50 ns 160 ns 2.5 °C/W 1 Power F-MOS FETs 2SK2129 PD Ta Area of safe operation (ASO) 60 10 I DP Allowable power dissipation PD (W) Drain current ID (A) Non repetitive pulse TC=25˚C t=100µs ID 1 1ms 10ms DC 0.1 30 (1) TC=Ta (2) Without heat sink (PD=2W) 50 Avalanche energy capacity EAS (mJ) 100 EAS Tj 40 (1) 30 20 10 (2) 0 0.01 1 10 100 1000 0 Drain to source voltage VDS (V) 40 20 60 ID VDS 5 50 Gate threshold voltage Vth (V) VDS=25V Drain current ID (A) 4.5V 125 50W 150 175 Vth TC 4 5V 100 6 TC=25˚C 5.5V 75 Junction temperature Tj (˚C) 6V Drain current ID (A) 10 ID VGS VGS=15V 10V 1 15 0 25 80 100 120 140 160 5 2 20 Ambient temperature Ta (˚C) 4 3 VDD=50V ID=3A 25 TC=0˚C 3 150˚C 25˚C 100˚C 2 1 VDS=25V ID=1mA 5 4 3 2 1 4V 0 0 0 10 20 30 40 50 60 0 Drain to source voltage VDS (V) 2 4 50 40 ID=6A 20 3A 0 5 1.5A 10 15 20 25 30 Gate to source voltage VGS (V) 2 Drain to source ON-resistance RDS(on) (Ω) 60 0.75A Drain to source voltage VDS (V) TC=25˚C 0 10 12 0 25 50 75 100 125 150 Case temperature TC (˚C) RDS(on) ID 70 10 8 Gate to source voltage VGS (V) VDS VGS 80 30 6 | Yfs | ID 3.0 12 VGS=10V Forward transfer admittance |Yfs| (S) 0 10 TC=150˚C 8 100˚C 6 25˚C 4 0˚C 2 VDS=25V TC=25˚C 2.5 2.0 1.5 1.0 0.5 0 0 0 1 2 3 4 Drain current ID (A) 5 0 1 2 3 4 Drain current ID (A) 5 Power F-MOS FETs 2SK2129 Ciss, Coss, Crss VDS VDS, VGS Qg 800 f=1MHz TC=25˚C 100 Coss Crss 10 1 0 50 100 150 200 250 Drain to source voltage VDS (V) 14 600 12 500 10 VDS 400 8 300 6 VGS 200 4 100 2 0 0 10 20 30 40 50 0 60 Gate charge amount Qg (nC) Switching time td(on),tr,tf,td(off) (ns) Ciss 700 Gate to source voltage VGS (V) 1000 300 16 VDD=200V VGS=10V TC=25˚C ID=3A Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 td(on), tr, tf, td(off) ID 250 200 150 td(off) 100 tr tf 50 td(on) 0 0 1 2 3 4 5 Drain current ID (A) 3