Power F-MOS FETs 2SK3033 (Tentative) Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 +0.5 13.7–0.2 ■ Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Unit Drain to Source breakdown voltage VDSS 100 V Gate to Source voltage VGSS ±20 V DC ID ±40 A Pulse IDP ±80 A EAS* 80 mJ Drain current Avalanche energy capacity * Ratings Allowable power TC = 25°C dissipation Ta = 25°C 2.6±0.1 1.2±0.15 1.45±0.15 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 7 1 2 3 1: Gate 2: Drain 3: Source TO-220E Package Internal Connection 60 PD 3.0±0.2 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 4.1±0.2 8.0±0.2 Solder Dip 15.0±0.3 ■ Applications W 2 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C D G S L = 0.1mH, IL = 40A, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions Drain to Source cut-off current IDSS Gate to Source leakage current IGSS VGS = ±20V, VDS = 0 Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 Gate threshold voltage Vth VDS = 10V, ID = 1mA RDS(on)1 VGS = 10V, ID = 20A Drain to Source ON-resistance RDS(on)2 VGS = 4V, ID = 20A Forward transfer admittance | Yfs | VDS = 10V, ID = 20A Diode forward voltage VDSF IDR = 20A, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss min typ VDS = 80V, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss max Unit 10 µA ±10 µA 100 V 1 13 2.5 V 35 60 mΩ 40 75 mΩ 26 S −1.4 V 2400 pF 530 pF 220 pF Turn-on time (delay time) td(on) 12 ns Rise time tr VDD = 30V, ID = 20A 20 ns Fall time tf VGS = 10V, RL = 1.5Ω 120 ns Turn-off time (delay time) td(off) 600 ns Thermal resistance between channel and case Rth(ch-c) 2.08 °C/W Thermal resistance between channel and atmosphere Rth(ch-a) 62.5 °C/W 1