RENESAS 2SK2221

2SK2220, 2SK2221
Silicon N Channel MOS FET
REJ03G1004-0200
(Previous: ADE-208-1352)
Rev.2.00
Sep 07, 2005
Application
Low frequency power amplifier
Complementary pair with 2SJ351, 2SJ352
Features
•
•
•
•
•
•
•
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
2. Source
(Flange)
3. Drain
G
1
Rev.2.00 Sep 07, 2005 page 1 of 5
2
S
3
2SK2220, 2SK2221
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSX
2SK2220
2SK2221
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at Tc = 25°C
Ratings
180
200
±20
8
8
100
150
–55 to +150
VGSS
ID
IDR
Pch*1
Tch
Tstg
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
180
200
Typ
—
—
Max
—
—
Unit
V
Test conditions
ID = 10 mA, VGS = –10 V
2SK2220
V(BR)DSX
2SK2221
Gate to source breakdown voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
VGS(off)
VDS(sat)
|yfs|
Ciss
Coss
Crss
ton
toff
0.15
—
0.7
—
—
—
—
—
—
—
1.0
600
800
8
250
90
1.45
12
1.4
—
—
—
—
—
V
V
S
pF
pF
pF
ns
ns
ID = 100 mA, VDS = 10 V
ID = 8 A, VGD = 0 V*2
ID = 3 A, VDS = 10 V*2
Drain to source
breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 2. Pulse Test
Rev.2.00 Sep 07, 2005 page 2 of 5
VGS = –5 V, VDS = 10 V,
f = 1 MHz
VDD = 30 V, ID = 4 A
2SK2220, 2SK2221
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
20
Ta = 25°C
m
s
0
(1
10
s
t)
(1
o
Sh
t)
=
(T C
25
1.0
o
Sh
m
n
tio
ra
)
°C
Drain Current ID (A)
10
=
pe
O
2
0.5
2SK2220
0
50
100
2SK2221
0.2
150
5
20
10
50
100
200
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Output Characteristics
9
8
VGS =
10 V
8
10
TC = 25°C
7
6
Pch = 125 W
6
5
4
4
3
2
TC = 25°C
VGS = 10 V
8
9
8
7
6
6
5
4
4
3
2
2
0
10
20
2
1
1
30
40
50
0
8
Typical Transfer Characteristics
Typical Transfer Characteristics
10
4
2
2
4
6
8
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 5
10
75
0.6
25
25
°C
VDS = 10 V
=–
75
0.8
C
25
=–
VDS = 10 V
Drain Current ID (A)
25 °
C
1.0
TC
Drain Current ID (A)
6
Drain to Source Voltage VDS (V)
6
0
4
Drain to Source Voltage VDS (V)
10
8
2
0
T
0
500
Case Temperature TC (°C)
Drain Current ID (A)
10
Drain Current ID (A)
=
PW
50
5
C
100
PW
10
D
Channel Dissipation Pch (W)
150
0.4
0.2
0
0.4
0.8
1.2
1.6
Gate to Source Voltage VGS (V)
2.0
Forward Transfer Admittance
vs. Frequency
Switching Time vs. Drain Current
5
500
Switching Time t on, t off (ns)
Forward Transfer Admittance yfs (S)
2SK2220, 2SK2221
1.0
0.1
TC = 25°C
VDS = 10 V
ID = 2 A
0.01
0.001
0.0005
2k
10 k
10 M 20 M
1M
100 k
t on
200
100
50
t off
20
10
5
0.1
0.2
Frequency f (Hz)
0.5
1.0
2
5
10
Drain Current ID (A)
Switching Time Test Circuit
Waveforms
Output
90%
RL
Input
Input
10%
t on
PW = 50 µs
duty ratio
= 1%
30 V
10%
50 Ω
Output
90%
Rev.2.00 Sep 07, 2005 page 4 of 5
t off
2SK2220, 2SK2221
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-65
PRSS0004ZE-A
TO-3P / TO-3PV
5.0g
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
Unit: mm
5.0 ± 0.3
15.6 ± 0.3
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part Name
2SK2220-E
2SK2221-E
Quantity
360 pcs
360 pcs
Shipping Container
Box (Tube)
Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
Sales Strategic Planning Div.
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Colophon .3.0