ETC PJB772

PJB772/PJB772S
PNP Epitaxial Silicon Transistor
AUDIO FREQ UENCY POWER AMPLIFIER
LOW SPEED SWITCHING
• Complement to PJD882
• PW10µs,Duty Cycle50%
• Pulse Test PW350µs,Duty Cycle2%
TO-92
TO-126
ABSOLUTE MAXIMUM RATINGS (T a = 25 ℃ )
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Bias Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (Ta=25℃)
Collector Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC
IB
PC
PC
Tj
Tstg
ELECTRICAL CHARACTERISTICS
Characteristics
Rating
-50
-40
-5
-2
-5
-0.6
1
150
55~150
P in : 1.Emitter
2.Collector
3.Base
Unit
V
V
V
A
A
A
W
W
℃
℃
ORDERING INFORMATION
Device
Operating Temperature
Package
PJB772SCT
PJB772CK
-20℃～+85℃
TO-92
TO-126
(Ta = 25 ℃ )
Symbol
Test condition
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB=-30V,IE =0
-1
µA
Emitter Cutoff Current
IEBO
VEB=-3V,IC=0
-1
µA
hFE1
VCE =-2V,IC=-20mA
30
220
hFE2
VCE =-2V,IC=-1A
60
160
400
*Collector Emitter Saturation
VCE(SAT)
IC=-2A,IB=-0.2A
-0.3
-0.45
V
Voltage
VBE(SAT)
IC=-2A,IB=-0.2A
-1.0
-2.0
V
fT
VCE =-5V,IC=0.1A
80
MHz
VCB=-10V,IE =0
55
pF
4
dB
*DC Current Gain
*Base Emitter Saturation Voltage
Current Gain Bandwidth Product
Cob
Output Capacitance
f=1MHz
VCE =10V,IC=1mA
NF
R S=10K,f=1KHz
Noise Figure
h FE(2) CLASSIFICATION
Classification
R
O
Y
G
hFE (2)
60-120
100-200
160-320
200-400
1-3
2002/01.rev.A
PJB772/PJB772S
PNP Epitaxial Silicon Transistor
STATIC CHARACTERISTIC
DC CURRENT GAIN
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
COLLECTOR OUTPUT CAPACITANCE
CURRENT GAIN-BANDWIDTH PRODUCT
SAFE OPERATING AREAS
DERATING CURVE OF SAFE OPERATING AREAS
POWER DERATING
2-3
2002/01.rev.A
PJB772/PJB772S
PNP Epitaxial Silicon Transistor
3-3
2002/01.rev.A