Ordering number:ENN6406 N-Channel Silicon MOSFET 2SK2530 Ultrahigh-Speed Switching Applications Package Dimensions · Low ON-resistance. · Ultrahigh-speed switching. · Low voltage drive. unit:mm 2083B [2SK2530] 2.3 1.5 6.5 5.0 4 0.5 5.5 7.0 Features 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 3 2.3 2.3 2092B [2SK2530] 6.5 5.0 4 0.5 0.5 2.3 2 2.5 1 0.6 0.8 0.85 1.2 7.0 5.5 1.5 2.3 3 1.2 0 to 0.2 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92500TS (KOTO) TA-2182 No.6406–1/4 2SK2530 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 250 V ±30 V 2 A ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 8 A 1 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS V(BR)GSS Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Conditions Ratings min ID=1mA, VGS=0 250 IG=±100µA, VGS=0 ±30 typ max Unit V V IDSS IGSS VDS=250V, VGS=0 VGS(off) | yfs | VDS=10V, ID=1mA VDS=10V, ID=1A RDS(on) Ciss VGS=10V, ID=1A 1.5 VDS=20V, f=1MHz VDS=20V, f=1MHz 160 pF 40 pF 15 pF 10 ns VGS=±25V, VDS=0 2.0 1.3 1.0 mA ±10 µA 3.0 V 2.0 Ω 1.9 S Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) VDS=20V, f=1MHz See specified Test Circuit tr See specified Test Circuit 13 ns td(off) See specified Test Circuit 80 ns tf See specified Test Circuit 30 IS=2A, VGS=0 IS=2A, di / dt=100µA/µs 1.0 Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD trr Diode Reverse Recovery Time 90 ns 1.5 V ns Marking : K2530 Switching Time Test Circuit VIN VDD=100V 10V 0V ID=1A RL=100Ω VIN VOUT D PW=10µs D.C.≤1% G P.G 50Ω 2SK2530 S No.6406–2/4 2SK2530 ID -- VDS V 5.5 2.0 1.5 4.0V 1.0 25°C 4.5 4.0 3.5 3.0 75°C 2.5 2.0 1.5 1.0 VGS=3.5V 0.5 VDS=10V Tc= -25°C 2.5 Drain Current, ID – A .0 V 3.0 ID -- VGS 5.0 5.0V 10 Drain Current, ID – A 3.5 6.0 6.0 8.0 V 4.0 0.5 0 0 1 2 3 4 5 6 7 8 9 Drain-to-Source Voltage, VDS – V 0 Static Drain-to-Source On-State Resistance, RDS(on) – Ω 1.6 1.2 0.8 6 8 10 12 14 16 18 Forward Current, IF – A 75° C C 0.1 7 5 3 5 7 0.1 2 3 5 7 1.0 2 3 0.8 0.4 --40 --20 0 SW Time -- ID 1000 3 3 tf 3 2 tr 10 7 5 td(on) 60 80 100 120 140 160 IT01570 IF -- VSD 1.0 7 5 3 2 0.1 7 5 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD – V 1.4 1.6 IT01572 Ciss, Coss, Crss -- VDS 1000 td(off) 100 7 5 40 VGS=0 0 VDD=100V VGS=10V 3 2 20 3 2 5 7 10 IT01571 Drain Current, ID – A 10 1.2 0.01 3 9 IT01568 1.6 3 2 2 2 8 2.0 10 7 5 °C 7 Case Temperature, Tc – ˚C f=1MHz 7 5 Ciss, Coss, Crss – pF Forward Transfer Admittance, | yfs | – S 25° 3 2 0.01 0.01 Switching Time, SW Time – ns --25 Tc= 1.0 7 5 6 2.4 0 --60 20 VDS=10V 3 2 5 RDS(on) -- Tc IT01569 | yfs | - I D 10 7 5 4 ID=1A VGS=10V 2.8 2.0 Gate-to-Source Voltage, VGS – V 3 3.2 2.4 4 2 Gate-to-Source Voltage, VGS – V Tc=25°C ID=1A 2 1 IT01567 RDS(on) -- VGS 2.8 Static Drain-to-Source On-State Resistance, RDS(on) – Ω 10 Tc=75 °C 25°C --25°C 0 3 Ciss 2 100 7 5 Coss 3 3 2 2 1.0 Crss 10 0.1 2 3 5 7 1.0 Drain Current, ID – A 2 3 5 IT01573 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Drain-to-Source Voltage, VDS – V IT01574 No.6406–3/4 2SK2530 ASO Drain Current, ID – A 10 7 5 10µs IDP=8A 10 1.0 7 5 DC 10 op era s ms tio n 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 Tc=25°C Single pulse 0.01 1.0 2 3 1.0 0.8 0.6 0.4 0.2 0 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS – V 2 3 5 IT01575 0 20 40 60 80 100 120 140 Ambient Temperature, Ta – ˚C 160 IT01788 PD -- Tc 30 Allowable Power Dissipation, PD – W 0µ s 1m 3 2 ID=2A PD -- Ta 1.2 Allowable Power Dissipation, PD – W 2 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc – ˚C 140 160 IT01576 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2000. Specifications and information herein are subject to change without notice. PS No.6406–4/4