WILLAS FM120-M+ THRU 2SK3018LT1 FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline N-channel MOSFET Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to optimize board space. z Low on-resistance • Low power loss, high efficiency. z switching speed High current capability, low forward voltage drop. • Fast High surge capability. z • Low voltage drive makes this device ideal for portable equipment Guardring for overvoltage protection. • z Easily designed drive circuits • Ultra high-speed switching. z • Easy parallel Siliconto epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental • z Pb-Free package is available standards of SOD-123H SOT-23 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1. GATE 2. SOURCE 0.071(1.8) 0.056(1.4) 3. DRAIN MIL-STD-19500 /228 product for packing code RoHS product for packing code suffix "G"suffix ”G” • RoHS Halogen free product for packing code suffix "H" suffix “H” Halogen free product for packing code Mechanical data Marking: KN Equivalent circuit 0.040(1.0) • Epoxy : UL94-V0 rated flame retardant MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. Units Symbol Parameter Value , • Terminals :Plated terminals, solderable per MIL-STD-750 VDS 30 Drain-Source Voltage Method 2026 : Indicated by cathode band Gate-Source Voltage VGSS• Polarity Position Drain : Any Current Continuous ID • Mounting • Weight : Approximated 0.011 gram ±20 V 0.1 A 0.35 W Dimensions in inches and (millimeters) Power Dissipation TJ Junction Temperature 150 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ℃ RATINGS 0.031(0.8) Typ. V PD Ratings ambientTemperature temperature unless otherwise specified. Tstg at 25℃Storage Single phase half wave, 60Hz, resistive of inductive load. Thermal Resistance, Junction-to-Ambient RθJA For capacitive load, derate current by 20% 0.024(0.6) ℃ -55~+150 ℃ /W 357 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted) Marking Code Maximum Recurrent Peak Reverse Voltage Parameter Maximum RMS Voltage Off Characteristics Drain-Source Breakdown Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 12 13 20 30 V RRM Symbol Test Condition 14 21 VRMS VDC VDS IO 30 Zero Gate Voltage Drain Current IDSS Gate –Source leakage current IGSS IFSM VGS =±20V, VDS = 0V Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Gate Threshold Voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Drain-Source On-Resistance Operating Temperature Range 15 50 28 35 40 50 CJ RDS(on) TJ Forward Transconductance TSTG gFS CHARACTERISTICS VGS = 4V, ID = 10mA VDS =3V, ID = 10mA Transfer Capacitance 70 80 100 1.0 30 0.8 40 120 200 Volts 105 140 Volts 150 200 Volts Units V Amps µA ±500 nA Amps V ℃/W 8 Ω PF 13 Ω 120 115 150 0.2 1.5 -55 to +150 VGS =2.5V,ID =1mA Max 56 60 30 10 100 Typ 42 -55 to +125 VF 0.50 Input Average Capacitance Maximum Reverse Current at @T A=25℃ Ciss IR @T A=125℃Coss Rated DC Blocking Voltage VDS =5V,VGS =0V,f =1MHz Output Capacitance Reverse NOTES: Min 18 80 - 65 to +175 ℃ ℃ mS 20 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Dynamic Characteristics* Maximum Forward Voltage at 1.0A DC 16 60 VDS =30V,VGS = 0V VGS(th)RΘJA VDS = 3V, ID =100µA Storage Temperature Range 20 VGS = 0V, ID = 10µA 14 40 0.70 0.5 13 10 0.85 0.9 pF 9 pF 4 pF 15 ns VGS =5V, VDD =5V, 35 ns ID =10mA, Rg=10Ω, RL=500Ω, 80 ns 80 ns Crss 0.92 Volts mAmps 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Switching Characteristics* 2- Thermal Resistance From Junction to Ambient Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf * These parameters have no way to verify. 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2SK3018LT1 FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Typical Characteristics Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Output Characteristics SOD-123H Transfer Characteristics profile surface mounted application in order to • Low 0.20 4.0V optimizeTboard =25℃ space. a 200 VGS=3.0V Pulsed loss, high3.5V efficiency. • Low power • High current capability, low forward voltage drop. surge capability. • High0.15 • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction.V 0.10 parts meet environmental standards of • Lead-free 100 (mA) (A) ID ID DRAIN CURRENT DRAIN CURRENT =2.5V MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" VGS=2.0V • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H V =1.5V , 0.00 • Terminals :Plated terminals, solderable per MIL-STD-750 0 1 2 3 4 5 VDS 0.071(1.8) 0.056(1.4) 10 3 1 0.040(1.0) 0.024(0.6) 0.3 0.1 Pulsed 0.031(0.8) Typ. 0 1 (V) 2 3 GATE TO SOURCE VOLTAGE • Polarity : Indicated by cathode band • Mounting Position : Any RDS(ON) —— ID • Weight : Approximated 0.011 gram 60 VGS Dimensions in inches and (millimeters) RDS(ON) —— VGS 15 Ta=25℃ Ta=25℃ ( Ω) 12 20 13 30 Maximum RMS Voltage 20 VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 ON-RESISTANCE VRRM VGS=2.5V IO Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) 0 3 Typical Thermal Resistance (Note 2) 10 30 Typical Junction Capacitance (Note 1) ID RΘJA (mA) CJ TJ Operating Temperature Range Storage Temperature Range 200 100 IS —— IS (mA) NOTES: 100 200 35 42 50 60 5 0 0 5 10 100 115 150 120 200 Volts 56 70 105 140 Volts 80 100 150 200 Volts ID=100mA 1.0 30 40 120 Amps Amps 10 GATE TO SOURCE VOLTAGE -55 to +125 15 VGS 20 ℃/W (V) PF -55 to +150 ℃ - 65 to +175 VF Pulsed Maximum Average Reverse Current at @T A=25℃ 28 18 80 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Ta=25℃ at 1.0A DC Maximum Forward Voltage @T A=125℃ 30 Voltage Rated DC Blocking 16 60 TSTG VSD VCHARACTERISTICS =0V GS 15 50 ID=50mA GS DRAIN CURRENT 14 40 40 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM V =4V 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage 1 Pulsed RDS(ON) RATINGS ON-RESISTANCE RDS(ON) ( Ω) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive 40 load, derate current by 20% Marking Code 4 (V) Pulsed MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS VDS=3V Ta=25℃ 0.031(0.8) Typ. GS DRAIN TO SOURCE VOLTAGE Method 2026 0.012(0.3) Typ. 30 GS 0.05 Mechanical data 0.146(3.7) 0.130(3.3) 0.50 0.70 0.85 0.5 IR 10 0.9 0.92 Volts mAmps 10 SOURCE CURRENT 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 3 1 0.3 2012-06 0.1 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE 2012-10 0.8 VSD (V) 1.0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2SK3018LT1 FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .122(3.10) .106(2.70) .063(1.60) .047(1.20) Mechanical data 0.012(0.3) Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage .080(2.04) Maximum RMS Voltage Maximum DC Blocking Voltage.070(1.78) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Storage Temperature Range 15 50 16 60 .004(0.10)MAX. CHARACTERISTICS 18 80 10 115 .008(0.20) 70 105 .003(0.08) 14 21 28 35 42 56 20 30 40 50 60 80 IO IFSM 100 100 150 150 120 200 Volts 140 Volts 200 Volts 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ IR @T A=125℃ NOTES: .020(0.50) .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 14 40 VDC TJ Operating Temperature Range 13 30 VRMS CJ Typical Junction Capacitance (Note 1) Rated DC Blocking Voltage 12 20 RΘJA Typical Thermal Resistance (Note 2) VRRM 2- Thermal Resistance From Junction to Ambient 0.50 0.70 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.85 0.5 0.9 0.92 Volts mAmps 10 Dimensions in inches and (millimeters) 2012-06 2012-10 WILLAS ELECTRONIC CORP. Rev.D WILLAS ELECTRONIC CORP.