ROHM 2SK3019EB

Data Sheet
2.5V Drive Nch MOSFET
2SK3019EB
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
EMT3F
Features
1) High-speed switching.
2) Low voltage drive(2.5V drive).
3) Drive circuits can be simple.
4) Parallel use is easy.
(3)
(1)
(2)
Abbreviated symbol : KN
 Application
Switching
 Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SK3019EB
 Inner circuit
Taping
TCL
3000

(3)
∗2
(1)
∗1
(1) Gate
(2) Source
(3) Drain
 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
20
V
100
mA
400
150
mA
mW
Tch
Tstg
150
55 to 150
C
C
Symbol
Rth (ch-a)*
Limits
833
Unit
C / W
Drain current
Continuous
ID
Pulsed
IDP
*1
PD
*2
Power dissipation
Channel temperature
Range of storage temperature
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a reference land.
 Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a reference land.
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© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.10 - Rev.A
Data Sheet
2SK3019EB
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
1
A
Drain-source breakdown voltage V(BR)DSS
Conditions
VGS=20V, VDS=0V
30
-
-
V
ID=10A, VGS=0V
IDSS
-
-
1
A
VDS=30V, VGS=0V
VGS (th)
0.8
-
1.5
V
VDS=3V, ID=100A
Static drain-source on-state
resistance
RDS (on)*
-
5
8
-
7
13
Forward transfer admittance
Zero gate voltage drain current
Gate threshold voltage

ID=10mA, VGS=4V
ID=1mA, V GS=2.5V
l Yfs l *
20
-
-
mS VDS=3V, ID=10mA
Input capacitance
Ciss
-
13
-
pF
VDS=5V
Output capacitance
Coss
-
9
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
4
-
pF
f=1MHz
Turn-on delay time
td(on)*
-
15
-
ns
VDD
tr *
-
35
-
ns
VGS=5V
td(off)*
-
80
80
-
ns
ns
RL=500
RG=10
Rise time
Turn-off delay time
Fall time
tf *
5V, I D=10mA
*Pulsed
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© 2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.10 - Rev.A
Data Sheet
2SK3019EB
Electrical characteristics curves
3V
Ta=25°C
Pulsed
3.5V
0.1
2.5V
0.05
2V
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
1m
0.5m
3
4
0.1m
0
5
1
DRAIN-SOURCE VOLTAGE : VDS (V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
50
Ta=125°C
75°C
25°C
−25°C
10
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
20
1
0.005
6
ID=10mA
4
3
2
0.2
0.5
0.1
0.05
100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
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75
100
125 150
10
5
ID=10mA
ID=1mA
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
200m
VGS=0V
Pulsed
100m
0.2
Ta=−25°C
25°C
75°C
125°C
0.02
0.01
0.005
0.001
0.0001 0.0002
75
0.1
VDS=3V
Pulsed
0
−50 −25
50
0.05
0.5
0.002
25
0.02
50
Ta=25°C
Pulsed
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
1
0
0.01
25
15
2
0.5
0.001 0.002
0
Fig.3 Gate threshold voltage vs.
channel temperature
5
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
ID=100mA
5
0
−50 −25
CHANNEL TEMPERATURE : Tch (°C)
10
VGS=4V
Pulsed
7
0.5
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
8
1
4
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : ID (A)
9
1.5
Fig.2 Typical transfer characteristics
VGS=4V
Pulsed
20
VDS=3V
ID=0.1mA
Pulsed
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical output characteristics
50
3
2
2
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
2
20m
SOURCE CURRENT : IS (A)
1
50m
0.2m
VGS=1.5V
0
0
VDS=3V
Pulsed
100m
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
4V
GATE THRESHOLD VOLTAGE : VGS(th) (V)
200m
0.15
50m
20m
Ta=125°C
75°C
25°C
−25°C
10m
5m
2m
1m
0.5m
0.2m
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
DRAIN CURRENT : ID (A)
Fig.8 Forward transfer
admittance vs. drain current
3/5
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
2011.10 - Rev.A
50
Ta=25°C
Pulsed
100m
20
CAPACITANCE : C (pF)
50m
20m
VGS=4V
10m
0V
5m
2m
1m
0.5m
1000
Ta=25°C
f=1MHZ
VGS=0V
Ciss
10
5
Coss
Crss
2
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
Pulsed
tf
500
SWITHING TIME : t (ns)
200m
SOURCE CURRENT : IS (A)
Data Sheet
2SK3019EB
td(off)
200
100
50
20
tr
td(on)
10
5
1
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse drain current vs.
source-drain voltage (ΙΙ)
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© 2011 ROHM Co., Ltd. All rights reserved.
0.5
0.1
0.2
0.5
1
2
5
10
20
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical capacitance vs.
drain-source voltage
4/5
50
2
0.1 0.2
0.5
1
2
5
10
20
50
100
DRAIN CURRENT : ID (mA)
Fig.12 Switching characteristics
2011.10 - Rev.A
Data Sheet
2SK3019EB
 Measurement circuits
Pulse width
VGS
ID
VDS
RL
50%
10%
D.U.T.
RG
90%
50%
10%
VGS
VDS
VDD
90%
td(on)
tr
ton
Fig.1-1 Switching Time Measurement Circuit
10%
90%
td(off)
tf
toff
Fig.1-2 Switching Waveforms
 Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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© 2011 ROHM Co., Ltd. All rights reserved.
5/5
2011.10 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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R1120A