UTC-IC 30N06

UNISONIC TECHNOLOGIES CO., LTD
30N06
Power MOSFET
60V, 30A N-CHANNEL
POWER MOSFET
1
TO-252
„
DESCRIPTION
The UTC 30N06 is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
„
1
FEATURES
* RDS(ON) = 40mΩ@VGS = 10 V
* Ultra low gate charge ( typical 20nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
„
TO-220
1
1
SYMBOL
TO-220F
TO-220F2
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
30N06L-TA3-T
30N06G-TA3-T
TO-220
30N06L-TF2-T
30N06G-TF2-T
TO-220F2
30N06L-TF3-T
30N06G-TF3-T
TO-220F
30N06L-TN3-T
30N06G-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
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QW-R502-087.E
30N06
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TC = 25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate to Source Voltage
RATINGS
UNIT
60
V
±20
V
TC = 25℃
30
A
Continuous Drain Current
ID
TC = 100℃
21.3
A
Pulsed Drain Current (Note 2)
IDM
120
A
300
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
8
mJ
TO-220
79
Power Dissipation
TO-220F/ TO-220F2
PD
45
W
TO-252
44
Junction Temperature
TJ
+150
℃
Operation Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25℃
„
SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F/TO-220F2
TO-252
TO-220
Junction to Case
TO-220F/TO-220F2
TO-252
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATING
62
62.5
110
1.9
2.7
2.85
UNIT
°C/W
°C/W
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30N06
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
60
V
Drain-Source Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
10
μA
100 nA
Forward
VGS = 20V, VDS = 0 V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -20V, VDS = 0 V
-100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA, Referenced to 25℃
0.06
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 15 A
32
40
mΩ
DYNAMIC CHARACTERISTICS
800
pF
Input Capacitance
CISS
VGS = 0 V, VDS = 25 V,
Output Capacitance
COSS
300
pF
f = 1MHz
Reverse Transfer Capacitance
CRSS
80
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
12
ns
Turn-On Rise Time
tR
79
ns
VDD = 30V, ID =15 A, VGS=10V
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
50
ns
Turn-Off Fall Time
tF
52
ns
Total Gate Charge
QG
20
30
nC
VDS = 60V, VGS = 10 V,
Gate-Source Charge
QGS
6
nC
ID = 24A (Note 1, 2)
Gate-Drain Charge
QGD
9
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 30A
1.4
V
Maximum Continuous Drain-Source Diode
IS
30
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
120
A
Forward Current
Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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30N06
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-087.E
30N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
„
Switching Test Circuit
12V
Same Type
as D.U.T.
50kΩ
0.2μF
Switching Waveforms
QG
10V
0.3μF
VDS
QGS
QGD
VGS
DUT
1mA
VG
Charge
Gate Charge Test Circuit
Unclamped Inductive Switching Test Circuit
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Gate Charge Waveform
Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
Transfer Characteristics
On-State Characteristics
VGS
Top: 15V
10V
8V
7V
102
6V
5.5V
5V
Bottorm: 4.5V
102
4.5V
101
101
Note:
1. VDS=25V
2. 20µs Pulse Test
100
10-1
101
100
Drain-Source Voltage, VDS (V)
100
2
4 5
6 7
8 9 10
3
Gate-Source Voltage, VGS (V)
Reverse Drain Current vs. Allowable Case
Temperature
On-Resistance Variation vs. Drain Current and
Gate Voltage
100
102
80
60
150℃
VGS=10V
101
40
VGS=20V
0.0
0
20
40
60
80
25℃
*Note:
1. VGS=0V
2. 250µs Test
20
100 120
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Gate-to-Source Voltage, VGS (V)
Drain Current, ID (A)
Capacitance (pF)
„
Power MOSFET
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30N06
Drain-Source On-Resistance, RDS(ON),
(Normalized) (Ω)
TYPICAL CHARACTERISTICS(Cont.)
Drain-Source Breakdown Voltage,
BVDSS(Normalized) (V)
„
Power MOSFET
Maximum Safe Operating
30
100 Operation in This
Area by RDS (ON)
100µs
10
10ms
Note:
1. TC=25℃
2. TJ=150℃
3. Single Pulse
0.1
1
20
1ms
DC
1
Maximum Drain Current vs. Case Temperature
10
100
1000
Drain-Source Voltage, VDS (V)
10
0
25
50
75
100
125
150
Case Temperature, TC (℃)
Transient Thermal Response Curve
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
Note:
1. ZθJC (t) = 0.88℃/W Max.
2. Duty Factor, D=t1/t2
3. TJ -TC=PDM×ZθJC (t)
10
1
1E-5 1E-4 1E-3 0.01
0.1
Square Wave Pulse Duration, t1 (sec)
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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