RENESAS R2J20652ANPG3

Preliminary
R2J20652ANP
Integrated Driver – MOS FET (DrMOS)
REJ03G1867-0300
Rev.3.00
Feb 26, 2010
Description
The R2J20652ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver
in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating
the need for an external SBD for this purpose.
Features

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Based on Intel 6  6 DrMOS specification pin out
Built-in power MOS FET suitable for Notebook, Desktop, Server application
Low-side MOS FET with built-in SBD for lower loss and reduced ringing
Built-in driver circuit which matches the power MOS FET
Built-in tri-state input function which can support a number of PWM controllers
VIN operating-voltage range: 27 V max
High-frequency operation (above 1 MHz) possible
Large average output current (Max. 35 A)
Achieve low power dissipation
Controllable driver: Remote on/off
Low-side MOS FET disabled function for DCM operation
Built-in bootstrapping switch
Small package: QFN40 (6 mm  6 mm  0.95 mm)
Terminal Pb-free/Halogen-free
Outline
Integrated Driver-MOS FET (DrMOS)
QFN40 package 6 mm × 6 mm
VCIN BOOT
GH
VIN
1
10
11
40
Reg5V
Driver
Pad
High-side
MOS Pad
DISBL#
VSWH
MOS FET Driver
LSDBL#
Low-side MOS Pad
PWM
31
CGND
GL
PGND
20
30
21
(Bottom view)
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 1 of 16
R2J20652ANP
Preliminary
Block Diagram
Driver Chip
VCIN
Reg5V
UVL
BOOT
GH
Boot
SW
VIN
Reg5V
DISBL#
High Side
MOS FET
2 μA
Supervisor
CGND
Reg5V
Level Shifter
25 k
150 k
LSDBL#
Reg5V
VSWH
PWM
Overlap
Protection.
& Logic
Input Logic
(TTL Level)
(3 state in)
Low Side
MOS FET
Reg5V
20 μA
PGND
CGND
GL
Notes: 1. Truth table for the DISBL# pin.
DISBL# Input
"L"
"Open"
"H"
2. Truth table for the LSDBL# pin.
Driver Chip Status
Shutdown (GL, GH = "L")
Shutdown (GL, GH = "L")
Enable (GL, GH = "Active")
3. Output signal from the UVL block
UVL output
Logic Level
For active
"H"
For shutdown
"L"
VCIN
VL
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 2 of 16
VH
LSDBL# Input
"L"
"Open"
"H"
GL Status
"L"
"Active"
"Active"
R2J20652ANP
Preliminary
VIN
11
VIN
12
VIN
13
VIN
VIN
VIN
VSWH
GH
CGND
BOOT
VCIN
NC
LSDBL#
Pin Arrangement
10
9
8
7
6
5
4
3
2
1
40
PWM
39
DISBL#
38
Reg5V
VIN
14
37
CGND
VSWH
15
36
GL
PGND
16
35
VSWH
PGND
17
34
VSWH
PGND
18
33
VSWH
PGND
19
32
VSWH
PGND
20
31
VSWH
VIN
CGND
VSWH
VSWH
PGND
VSWH
PGND
PGND
PGND
PGND
PGND
PGND
PGND
21 22 23 24 25 26 27 28 29 30
(Top view)
Note: All die-pads (three pads in total) should be soldered to PCB.
Pin Description
Pin Name
LSDBL#
NC
VCIN
BOOT
CGND
GH
VIN
VSWH
PGND
GL
Reg5V
DISBL#
PWM
Pin No.
1
2
3
4
5, 37, Pad
6
8 to 14, Pad
7, 15, 29 to 35, Pad
16 to 28
36
38
39
40
Description
Low-side gate disable
No connect
Control input voltage
Bootstrap voltage pin
Control signal ground
High-side gate signal
Input voltage
Phase output/Switch output
Power ground
Low-side gate signal
+5 V logic power supply output
Signal disable
PWM drive logic input
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 3 of 16
Remarks
When asserted "L" signal, Low-side gate disable
Driver Vcc input
To be supplied +5 V through internal switch
Should be connected to PGND externally
Pin for Monitor
Pin for Monitor
Disabled when DISBL# is "L"
5 V logic input
R2J20652ANP
Preliminary
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Supply voltage
PWM voltage
Symbol
Pt(25)
Pt(110)
Iout
VIN(DC)
VIN(AC)
VSWH(DC)
VSWH(AC)
VBOOT(DC)
VBOOT(AC)
VCIN
Vpwm
Other I/O voltage
Reg5V voltage
Reg5V current
DISBL# current
Vdisbl, Vlsdbl
Vreg5V
Ireg5V
Idisbl
Operating junction temperature
Storage temperature
Tj-opr
Tstg
Average output current
Input voltage
Switch node voltage
BOOT voltage
Notes: 1.
2.
3.
4.
5.
6.
7.
8.
Rating
25
8
35
–0.3 to +27
30
27
30
32
36
–0.3 to +27
Units
W
A
V
V
V
V
V
–0.3 to +5.5 @UVL OFF
–0.3 to +0.3 @UVL ON
–0.3 to Reg5V + 0.3
–0.3 to VCIN + 0.3
–0.3 to +6
–20 to +0.1
0 to 1.0
V
V
mA
mA
–40 to +150
–55 to +150
°C
°C
Pt(25) represents a PCB temperature of 25°C, and Pt(110) represents 110C.
Rated voltages are relative to voltages on the CGND and PGND pins.
For rated current, (+) indicates inflow to the chip and (–) indicates outflow.
This rating is when UVL (Under Voltage Lock out) is ineffective (normal operation mode).
This rating is when UVL (Under Voltage Lock out) is effective (lock out mode).
The specification values indicated "AC" are limited within 100 ns.
This rating is when the external power-source is applied to Reg5V pin.
Reg5V + 0.3 V < 6 V
Safe Operating Area
Average Output Current (A)
45
40
35
30
25
20
VOUT = 1.3 V
VIN = 12 V
VCIN = 12 V
L = 0.45 μH
Fsw = 1 MHz
15
10
5
0
0
25
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 4 of 16
50
75
100
125
PCB Temperature (°C)
150
175
Note
1
2
2, 4, 6
2
2, 4, 6
2
2, 4, 6
2
2, 4
2, 5
2, 7, 8
2
7
3
3
R2J20652ANP
Preliminary
Recommended Operating Condition
Item
Input voltage
Supply voltage
Symbol
VIN
VCIN
Rating
4.5 to 22
Units
V
V
4.5 to 5.5
or
8 to 22
Note
When the usage of VCIN = 4.5 V to 5.5 V,
VCIN should be connected to Reg5V
(Refer to "Pin Connection")
Electrical Characteristics
(Ta = 25C, VCIN = 12 V, VSWH = 0 V, unless otherwise specified)
Item
Supply
PWM
input
5V
regulator
DISBL#
input
LSDBL#
input
Note:
Symbol
Min
Typ
Max
Units
Test Conditions
VCIN start threshold
VH
7.0
7.4
7.8
V
VCIN shutdown threshold
VL
6.6
7.0
7.4
V
UVLO hysteresis
dUVL
—
0.4
—
V
VCIN operating current
ICIN
—
34
—
mA
fPWM = 1 MHz,
Ton_pwm = 120 ns
VCIN disable current
ICIN-DISBL
—
—
2.5
mA
DISBL# = 0 V, PWM = 0 V,
LSDBL# = Open
PWM rising threshold
VH-PWM
3.0
3.4
3.8
V
PWM falling threshold
VL-PWM
0.9
1.2
1.5
V
PWM input resistance
RIN-PWM
10
20
40
k
VL-PWM
—
VH-PWM
V
—
100
—
ns
Tri-state shutdown window
VIN-SD
Shutdown hold-off time
tHOLD-OFF *1
VH – VL
PWM = 1 V
Output voltage
Vreg
4.95
5.2
5.45
V
Line regulation
Vreg-line
–10
0
10
mV
VCIN = 12 V to 16 V
Load regulation
Vreg-load
–10
0
10
mV
Ireg = 0 to 10 mA
Disable threshold
VDISBL
0.9
1.2
1.5
V
Enable threshold
VENBL
1.9
2.4
2.9
V
Input current
IDISBL
10
20
40
A
Low-side activation threshold
VLSDBLH
1.9
2.4
2.9
V
Low-side disable threshold
VLSDBLL
0.9
1.2
1.5
V
Input current
ILSDBL
–56
–28
–14
A
1. Reference values for design. Not 100% tested in production.
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 5 of 16
DISBL# = 1 V
LSDBL# = 1 V
R2J20652ANP
Preliminary
Typical Application
(1) Desktop/Server Application
+12 V
VCIN
BOOT
VIN
DISBL#
Reg5V
R2J20652ANP
PGND
PWM
CGND LSDBL# GH
+5 V
VCIN
VSWH
GL
BOOT
VIN
DISBL#
Reg5V
R2J20652ANP
PWM
VSWH
PGND
CGND LSDBL# GH
GL
PWM1
PWM
Control
Circuit
+1.3 V
PWM2
PWM3
PWM4
VCIN
BOOT
VIN
DISBL#
Reg5V
R2J20652ANP
PGND
PWM
CGND LSDBL# GH
VCIN
VSWH
GL
BOOT
VIN
DISBL#
Reg5V
R2J20652ANP
PWM
CGND LSDBL# GH
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 6 of 16
VSWH
PGND
GL
Power GND
Signal GND
R2J20652ANP
Preliminary
Typical Application (cont.)
(2) Notebook Application
+19 V
+5 V
VCIN
BOOT
VIN
DISBL#
Reg5V
R2J20652ANP
PGND
PWM
CGND LSDBL# GH
VCIN
VSWH
GL
BOOT
VIN
DISBL#
Reg5V
R2J20652ANP
PWM
VSWH
PGND
CGND LSDBL# GH
GL
PWM1
PWM
Control
Circuit
+1.1 V
PWM2
PWM3
VCIN
BOOT
DISBL#
VIN
Reg5V
R2J20652ANP
PWM
CGND LSDBL# GH
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 7 of 16
VSWH
PGND
GL
Power GND
Signal GND
R2J20652ANP
Preliminary
Pin Connection
(1) Typical Desktop/Server Application
0.1 μF
1.0 μF
0 to 10 Ω
CGND
VIN
12 V
Low Side Disable Signal INPUT
8
7
6
5
4
3
2
1
GH
CGND
BOOT
VCIN
NC
LSDBL#
9
VIN
10
VSWH
CGND
10 μF × 4
11
VIN
PAD
12
13
PGND
CGND
PAD
14 VIN
DSBL# 39
DSBL# INPUT
Reg5V 38
1.0 μF
CGND 37
15 VSWH
GL 36
R2J20652ANP
16 PGND
VSWH 35
VSWH
PAD
17
18
34
33
31
22
23
24
25
26
27
VSWH
32
20
PGND
19
21
Power GND
PWM INPUT
PWM 40
28
29
30
0.45 μH
Signal GND
Vout
PGND
PGND
(2) Typical Notebook Application
0 to 10 Ω
0.1 μF
VIN
19 V
Low Side Disable Signal INPUT
7
6
5
4
3
2
CGND
BOOT
VCIN
NC
11
VIN
PAD
12
13
PGND
PWM INPUT
PWM 40
CGND
PAD
14 VIN
DSBL# 39
Reg5V 38
CGND 37
15 VSWH
GL 36
R2J20652ANP
16 PGND
VSWH
PAD
18
34
DSBL# INPUT
33
31
22
Signal GND
23
24
25
26
27
VSWH
32
20
PGND
19
21
5.0 V
External
Power Supply
1.0 μF
VSWH 35
17
Power GND
1
LSDBL#
8
GH
9
VIN
10
VSWH
CGND
10 μF × 4
28
29
30
0.45 μH
Vout
PGND
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 8 of 16
PGND
R2J20652ANP
Preliminary
Test Circuit
Vinput
A
IIN
V VIN
Vcont
A
ICIN
VCIN V
VCIN
BOOT
DISBL#
VIN
R2J20652ANP
Reg5V
VSWH
LSDBL#
5 V pulse
PWM
CGND
Note: PIN = IIN × VIN + ICIN × VCIN
POUT = IO × VO
Efficiency = POUT / PIN
PLOSS(DrMOS) = PIN – POUT
Ta = 27°C
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 9 of 16
PGND
GH
Electric
load
IO
GL
Average Output Voltage
Averaging
V
VO
circuit
R2J20652ANP
Preliminary
Typical Data
Power Loss vs. Output Current
Power Loss vs. Input Voltage
9
1.5
VIN = 12 V
8 VCIN = Reg5V = 5 V
VOUT = 1.3 V
Normalized Power Loss
@ VIN = 12 V
Power Loss (W)
7 fPWM = 600 kHz
L = 0.45 μH
6
5
4
3
2
1.2
1.1
1.0
0.9
1
0
VCIN = Reg5V = 5 V
VOUT = 1.3 V
1.4 f
PWM = 600 kHz
L = 0.45 μH
1.3 IOUT = 25 A
0
5
10
15
20
25
30
0.8
35
4
6
8
Output Current (A)
12
VIN = 12 V
VCIN = Reg5V = 5 V
1.4 f
PWM = 600 kHz
L = 0.45 μH
1.3 IOUT = 25 A
VIN = 12 V
VCIN = Reg5V = 5 V
1.4 VOUT = 1.3 V
L = 0.45 μH
1.3 IOUT = 25 A
1.0
Normalized Power Loss
@ fPWM = 600 kHz
1.5
1.1
20
22
1.1
1.0
0.9
0.8
0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
0.8
250
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 10 of 16
18
1.2
0.9
Output Voltage (V)
16
Power Loss vs. Switching Frequency
1.5
1.2
14
Input Voltage (V)
Power Loss vs. Output Voltage
Normalized Power Loss
@ VOUT = 1.3 V
10
500
750
1000
Switching Frequency (kHz)
1250
R2J20652ANP
Preliminary
Power Loss vs. Output Inductance
Power Loss vs. VCIN
1.5
1.5
1.3
Normalized Power Loss
@ VCIN = Reg5V = 5 V
Normalized Power Loss
@ L = 0.45 μH
1.4
VIN = 12 V
VCIN = Reg5V = 5 V
VOUT = 1.3 V
fPWM = 600 kHz
IOUT = 25 A
1.2
1.1
1.0
1.2
1.1
1.0
0.9
0.9
0.8
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.8
4.5
Average ICIN vs. Switching Frequency
50
40
VIN = 12 V
VCIN = Reg5V = 5 V
VOUT = 1.3 V
L = 0.45 μH
IOUT = 0 A
30
20
10
0
250
500
750
1000
Switching Frequency (kHz)
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 11 of 16
5.0
5.5
VCIN = Reg5V (V)
Output Inductance (μH)
Average ICIN (mA)
VIN = 12 V
VOUT = 1.3 V
1.4 f
PWM = 600 kHz
L = 0.45 μH
1.3 IOUT = 25 A
1250
6.0
R2J20652ANP
Preliminary
Description of Operation
The DrMOS multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a
single QFN package. Since the parasitic inductance between each chip is extremely small, the module is highly suitable
for use in buck converters to be operated at high frequencies. The control timing between the high-side MOS FET, lowside MOS FET, and driver is optimized so that high efficiency can be obtained at low output-voltage.
VCIN & DISBL#
The VCIN pin is connected to the UVL (under-voltage lockout) module, so that the built-in 5 V regulator is disabled as
long as VCIN is 7.4 V or less. On cancellation of UVL, the built-in 5 V regulator remains enabled until the UVL input
is driven to 7.0 V or less.
The built-in 5 V regulator is a series regulator with temperature compensation. A ceramic capacitor with a value of 0.1
F or more must be connected between the CGND plane and the Reg5V Pin.
The output of 5 V regulator is monitored by the internal Supervisor circuits. When the Supervisor detects this output is
more than 4.2 V (typ.), the driver state becomes active (figure1.1).
Figure 1.2 shows the application when the external 5 V regulator is used. When the Reg5V pin is applied into external 5
V, the Supervisor can activate the driver. In this application usage, VCIN should be connected to Reg5V.
The signal on pin DISBL# also enables or disables the circuit. When UVL disables the circuit, the built-in 5 V regulator
does not operate, but when the signal on DISBL# disables the circuit, only output-pulse generation is terminated, and
the 5 V regulator is not disabled.
Voltages from –0.3 V to VCIN + 0.3 V can be applied to the DISBL# pin, so on/off control by a logic IC or the use of a
resistor, etc., to pull the DISBL# line up to VCIN are both possible.
VCIN
L
H
H
H
DISBL#

L
H
Open
REG5V
0
Active
Active
Active
12 V
Driver State
Disable (GL, GH = L)
Disable (GL, GH = L)
Active
Disable (GL, GH = L)
VCIN > 7.4 V
VCIN
VCIN
5V
IN
Reg5V
UVL &
5 V Regulator
To Internal
Logic
OUT
OUT
IN
UVL &
5 V Regulator
Reg5V
External 5 V
To Internal
Logic
Supervisor
Figure 1.1 Typical 12 V Input Application
(Activate Built-in 5 V Regulator)
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 12 of 16
Supervisor
Figure 1.2 External 5 V Application
R2J20652ANP
Preliminary
PWM & LSDBL#
The PWM pin is the signal input pin for the driver chip. When the PWM input is high, the gate of the high-side MOS
FET (GH) is high and the gate of the low-side MOS FET (GL) is low.
PWM
L
H
GH
L
H
GL
H
L
The LSDBL# pin is the Low Side Gate Disable pin for "Discontinuous Conduction Mode (DCM)" when LSDBL# is
low.
Figure 2 shows the Typical high-side and low-side gate switching and Inductor current (IL) during "Continuous
Conduction Mode (CCM)" and low-side gate disabled when asserting LSDBL# signal.
This pin is internally pulled up to Reg5V with 150 k resistor.
When low-side disable function is not used, keep this pin open or pulled up to VCIN.
CCM Operation (LSDBL# = "H" or Open mode)
IL
GH
GL
Figure 2.1 Typical Signals during CCM
DCM Operation (LSDBL# = "L")
IL
0A
GH
GL
Figure 2.2 Typical Signals during DCM
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 13 of 16
R2J20652ANP
Preliminary
The PWM input is TTL level and has hysteresis. When the signal route from the control IC is high impedance, the tristate function turns off the high- and low-side MOS FETs. This function operates when the PWM input signal stays in
the input hysteresis window for 100 ns (typ.). After the tri-state mode has been entered and GH and GL have become
low, a PWM input voltage of 3.4 V or more is required to make the circuit return to normal operation.
100 ns (tHOLD-OFF)
100 ns (tHOLD-OFF)
3.4 V
PWM 1.2 V
GH
GL
100 ns (tHOLD-OFF)
100 ns (tHOLD-OFF)
3.4 V
PWM 1.2 V
GH
GL
Figure 3 PWM Shutdown-Hold Time Signal
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 14 of 16
R2J20652ANP
Preliminary
The equivalent circuit for the PWM-pin input is shown in the next figure. M1 is in the ON state during normal
operation; after the PWM input signal has stayed in the hysteresis window for 100 ns (typ.) and the tri-state detection
signal has been driven high, the transistor M1 is turned off.
When VCIN is powered up, M1 is started in the OFF state regardless of PWM Low or Open state. After PWM is
asserted high signal, M1 becomes ON and shifts to normal operation.
VCIN
DISBL#
M1
20 k
PWM Pin
Input
Logic
Tri-state
detection signal
To internal control
20 k
Figure 4 Equivalent Circuit for the PWM-pin Input
MOS FETs
The MOS FETs incorporated in R2J20652ANP are highly suitable for synchronous-rectification buck conversion. For
the high-side MOS FET, the drain is connected to the VIN pin and the source is connected to the VSWH pin. For the
low-side MOS FET, the drain is connected to the VSWH pin and the source is connected to the PGND pin.
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 15 of 16
R2J20652ANP
Preliminary
Package Dimensions
JEITA Package Code
P-HVQFN40-p-0606-0.50
RENESAS Code
PVQN0040KC-A
Previous Code
—
MASS[Typ.]
—
.1
39
)
B
HE
E
B
1pin
40
40
2.2
C0.3
1.95
E /2
INDEX
1.95
4-C0.50
1pin
2.2
(0
D /2
2.2
4-
HD/2
0.2
0.2
HD
D
A
0.7
0.2
Reference
Symbol
2.05
X4
f S AB
b
x
20°
S AB
L1
S
c2
y1 S
A
A2
0.69
20°
2.05
ZD
e
t S AB
Lp
A1
X4
ZE
1.95
2.2
HE/2
CAV No.
Die No.
1.95
2-A section
y S
Dimension in Millimeters
Min Nom Max
D
5.95 6.00 6.05
5.95 6.00 6.05
E
A2 0.87 0.89 0.91
f
—
— 0.20
A 0.865 0.91 0.95
A1 0.005 0.02 0.04
b
0.17 0.22 0.27
b1 0.16 0.20 0.24
— 0.50 —
e
Lp 0.40 0.50 0.60
x
—
— 0.05
y
—
— 0.05
y1
—
— 0.20
t
—
— 0.20
HD 6.15 6.20 6.25
HE 6.15 6.20 6.25
ZD
— 0.75 —
ZE
— 0.75 —
L1 0.06 0.10 0.14
c1 0.17 0.20 0.23
c2 0.17 0.22 0.27
Ordering Information
Part Name
R2J20652ANP#G3
Quantity
2500 pcs
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
Page 16 of 16
Shipping Container
Taping Reel
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5.
When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
7.
Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
7F, No. 363 Fu Shing North Road Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2010 Renesas Electronics Corporation. All rights reserved.
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