RB450F Diodes Schottky barrier diode RB450F !External dimensions (Units : mm) 2.0±0.2 0.9±0.1 1.3±0.1 2.1±0.1 0.65 1.25±0.1 0.65 !Features 1) Small surface mounting type. (UMD3) 2) Low IR. (IR=80nA Typ.) 3) High reliability. 0.3 0~0.1 0.15±0.05 3F 0.3±0.1 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323 !Circuit !Absolute maximum ratings (Ta = 25°C) Symbol Limits Unit Peak reverse voltage Parameter VRM 45 V DC reverse voltage VR 40 V IO 0.1 A IFSM 1 A Mean rectifying current Peak forward surge current ∗ Junction temperature Tj 125 °C Storage temperature Tstg −40~+125 °C ∗60Hz for 1 !Electrical characteristics (Ta = 25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit VF − − 0.45 V Conditions IF=10mA Reverse current IR − − 1 µA VR=10V Capacitance between terminals CT − 6.0 − pF VR=10V, f=1MHz Note) ESD sensitive product handling required. 0.6 0.1Min. !Applications Low current rectification RB450F Diodes REVERSE CURRENT : IR (A) 1m −2 5 25 1m °C 12 5°C 75 °C 10m °C 100m Ta = FORWARD CURRENT : IF (A) 1 100µ 10µ 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Io CURRENT (%) Ta=125°C 10µ 75°C 1µ 25°C 100n 10n 0 5 10 15 20 25 30 35 100 50 20 10 5 2 0 0 2 4 6 8 10 12 14 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 100 80 60 40 20 0 0 100µ CAPACITANCE BETWEEN TERMINALS : CT (pF) !Electrical characteristic curves (Ta = 25°C) 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (°C) Fig. 4 Derating curve (mounting on glass epoxy PCBs)