ELECTROSTATIC SENSITIVE DEVICE Silicon RF Power Semiconductors OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME LOT No. High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz 0. 1 0.8 MIN 2.5+/-0.1 FEATURES 1.5+/-0.1 1.6+/-0.1 3.9+/-0.3 DESCRIPTION 1 2 1.5+/-0.1 3 0.4 +0.03 -0.05 1.5+/-0.1 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 APPLICATION 0.1 MAX For output stage of high power amplifiers in HF Band mobile radio sets. Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm RoHS COMPLIANT RD00HHS1-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders. How ever, it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel Temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 30 V Vds=0V V ±10 Tc=25°C 3.1 W mW Zg=Zl=50Ω 10 mA 200 °C 150 -40 to +125 °C °C/W Junction to case 40 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS IGSS Vth Pout ηD Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=4mW, f=30MHz,Idq=50mA MIN 1 0.3 55 LIMITS TYP MAX. 25 1 2 3 0.7 65 - UNIT uA uA V W % Note : Above parameters , ratings , limits and conditions are subject to change. RD00HHS1 17 Aug 2010 1/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE 4 Vgs-Ids CHARACTERISTICS 0.6 CHANNEL DISSIPATION Pch(W) ... *1:The material of the PCB Glass epoxy (t=0.6 mm) Ta=+25°C Vds=10V 0.5 3 0.4 Ids(A) On PCB(*1) with Heat-sink 2 0.3 0.2 1 0.1 On PCB(*1) 0.0 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(°C) 0 200 Vds-Ids CHARACTERISTICS 2 3 Vgs(V) 4 5 Vds VS. Ciss CHARACTERISTICS 1.4 20 Ta=+25°C 1.2 Ta=+25°C f=1MHz Vgs=10V Vgs=9V Vgs=8V 15 Vgs=7V 1.0 Vgs=6V 0.8 0.6 Ciss(pF) Ids(A) 1 Vgs=5V 0.4 10 5 Vgs=4V 0.2 Vgs=3V 0 0.0 0 2 4 6 Vds(V) 8 0 10 Vds VS. Coss CHARACTERISTICS 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 20 4 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 3 Crss(pF) 15 Coss(pF) 5 10 2 1 5 0 0 0 5 10 Vds(V) 15 0 20 RD00HHS1 5 10 Vds(V) 15 20 17 Aug 2010 2/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS 35 1.2 100 60 20 40 ηｄ Ta=+25°C f=30MHz Vdd=12.5V Idq=50mA 15 10 -20 -15 -10 -5 0 Pin(dBm) 5 Pout(W) , Idd(A) 25 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 1.0 80 Gp 90 ηd 0.8 0.6 70 0.4 20 0.2 0 0.0 Idd Vdd-Po CHARACTERISTICS 0.6 0.4 8 10 +25°C Vds=10V Tc=-25~+75°C +75°C 0.3 0.2 40 Po 4 6 Pin(mW) 0.4 80 Idd 50 -25°C 0.5 Ids(A) Po(W) 0.8 60 Vgs-Ids CHARACTORISTICS 2 Idd(mA) Ta=25°C f=30MHz Pin=4mW Icq=50mA Zg=ZI=50 ohm 2 0.6 120 1.0 Ta=25°C f=30MHz Vdd=12.5V Idq=50mA 40 0 10 1.2 80 ηd(%) Po 30 100 Po 0.1 0.2 0.0 0.0 0 2 4 6 8 10 Vdd(V) 12 0 14 1 2 3 Vgs(V) 4 5 Vgs-gm CHARACTORISTICS 0.6 Vds=10V Tc=-25~+75°C 0.5 gm(S) 0.4 -25°C 0.3 +25°C 0.2 +75°C 0.1 0.0 0 1 2 3 Vgs(V) 4 5 RD00HHS1 17 Aug 2010 3/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W TEST CIRCUIT(f=30MHz) Vgg Vdd 330μF,50V 10μF,50V C2 C1 180pF 82pF L4 1kΩ 6.0mm 3.0mm Pin 13.0mm 7.0mm 9.0mm 9.0mm 7.0mm 2.5mm 4.0mm 8.0mm 22.0mm 14.0mm L3 L1 470pF 220pF L2 15pF Pout 7.5mm 15Ω 15pF 15pF 470pF 3pF RD00HHS1 Note:Board material-glass epoxi substrate L1:LAL04NAR27(0.27μH) micro strip line width=1.0mm/50Ω,εr:4.8,t=0.6mm L2:LAL04NAR39(0.39μH) L3:LAL04NAR39(0.39μH) L4:LAL04NA1R0(1μH) C1,C2:100pF,0.022μF,0.1μF in parallel RD00HHS1 17 Aug 2010 4/7 ELECTROSTATIC SENSITIVE DEVICE Silicon RF Power Semiconductors OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W RD00HHS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 1.002 1.003 1.005 1.007 0.989 0.963 0.936 0.911 0.892 0.872 0.857 0.846 0.834 0.830 0.826 0.821 0.815 0.812 0.814 0.816 0.811 0.814 S21 (ang) -3.6 -9.9 -16.8 -33.5 -49.8 -64.0 -76.9 -87.9 -97.7 -106.2 -113.7 -120.1 -126.0 -131.0 -135.9 -140.2 -144.0 -147.5 -151.0 -153.9 -156.8 -159.5 (mag) 12.533 12.631 12.784 12.820 12.355 11.571 10.697 9.791 8.972 8.202 7.533 6.921 6.386 5.894 5.484 5.097 4.749 4.443 4.167 3.904 3.670 3.471 S12 (ang) 178.3 174.6 170.6 159.1 147.5 136.8 127.3 119.1 111.4 104.9 98.9 93.4 88.4 83.7 79.3 75.1 71.0 67.3 63.8 60.1 56.8 53.7 RD00HHS1 (mag) 0.003 0.008 0.013 0.025 0.035 0.042 0.048 0.053 0.055 0.057 0.058 0.058 0.059 0.058 0.057 0.056 0.055 0.053 0.051 0.049 0.048 0.046 S22 (ang) 90.3 82.8 79.5 67.4 56.5 47.5 38.2 30.6 24.6 18.5 13.1 8.7 4.7 0.2 -2.8 -6.9 -9.8 -13.0 -15.0 -17.6 -20.8 -22.2 (mag) 0.920 0.919 0.918 0.898 0.866 0.824 0.781 0.745 0.711 0.685 0.665 0.649 0.640 0.630 0.625 0.623 0.623 0.623 0.627 0.630 0.634 0.640 (ang) -2.7 -6.9 -11.2 -22.4 -32.8 -42.2 -50.4 -57.9 -64.6 -70.2 -75.5 -80.5 -85.2 -89.2 -93.3 -97.1 -100.7 -104.3 -107.7 -110.9 -113.9 -117.1 17 Aug 2010 5/7 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon RF Power Semiconductors RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD00HHS1 17 Aug 2010 6/7 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon RF Power Semiconductors RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these - These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. - Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. - All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. - If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. - Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. 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