RENESAS RJK0358DSP

RJK0358DPA
Silicon N Channel Power MOS FET
Power Switching
REJ03G1651-0400
Rev.4.00
Apr 10, 2008
Features
•
•
•
•
•
High speed switching
Capable of 5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.6 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
REJ03G1651-0400 Rev.4.00 Apr 10, 2008
Page 1 of 6
Symbol
VDSS
VGSS
Ratings
30
±20
Unit
V
V
ID
38
152
38
19
36.1
45
2.78
150
–55 to +150
A
A
A
A
mJ
W
°C/W
°C
°C
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-c Note3
Tch
Tstg
RJK0358DPA
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Notes: 4. Pulse test
REJ03G1651-0400 Rev.4.00 Apr 10, 2008
Page 2 of 6
Min
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.6
3.8
50
4300
500
280
33
13
8
11
5.8
68
12
Max
—
± 0.1
1
2.5
3.4
5.4
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
—
—
0.84
30
1.10
—
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 19 A, VGS = 10 V Note4
ID = 19 A, VGS = 5 V Note4
ID = 19 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 5 V
ID = 38 A
VGS = 10 V, ID = 19 A
VDD ≅ 10 V
RL = 0.53 Ω
Rg = 4.7 Ω
IF = 38 A, VGS = 0 Note4
IF =38 A, VGS = 0
diF/ dt = 100 A/ µs
RJK0358DPA
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
ID (A)
1000
60
Drain Current
Channel Dissipation
Pch (W)
80
40
20
10 µs
100
Operation in
1
50
100
150
Case Temperature
0.1 1 shot Pulse
0.1
1
200
10
Drain to Source Voltage
Tc (°C)
100
VDS (V)
Typical Transfer Characteristics
Typical Output Characteristics
50
50
Pulse Test
4.5 V
10 V
40
30
ID (A)
3.2 V
20
2.8 V
VGS = 2.6 V
10
40
VDS = 10 V
Pulse Test
30
3.0 V
Drain Current
ID (A)
limited by RDS(on)
Tc = 25°C
0
Drain Current
1 ms
10
20
10
25°C
Tc = 75°C
–25°C
0
2
4
6
Drain to Source Voltage
8
0
10
60
40
ID = 10 A
20
5A
2A
0
4
8
12
Gate to Source Voltage
16
20
VGS (V)
REJ03G1651-0400 Rev.4.00 Apr 10, 2008
Page 3 of 6
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (mΩ)
Drain to Source Saturation Voltage
VDS (on) (mV)
Pulse Test
2
Gate to Source Voltage
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
80
1
100
Pulse Test
30
10
VGS = 5 V
3
10 V
1
1
3
10
30
Drain Current
100
ID
300 1000
(A)
Static Drain to Source on State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
10
10000
Pulse Test
Ciss
3000
8
Capacitance C (pF)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
RJK0358DPA
ID = 2 A, 5 A, 10 A
6
VGS = 5 V
4
2
2 A, 5 A, 10 A
10 V
0
–25
0
25
50
75
Tc
Coss
300
Crss
100
30
10
0
100 125 150
Case Temperature
1000
(°C)
8
20
10
4
VDD = 25 V
10 V
0
0
20
40
Gate Charge
60
80
0
100
Qg (nc)
Repetitive Avalanche Energy EAR (mJ)
50
IAP = 19 A
VDD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1651-0400 Rev.4.00 Apr 10, 2008
Page 4 of 6
Pulse Test
10 V
40
5V
30
20
VGS = 0, –5 V
10
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
40
50
Reverse Drain Current IDR (A)
12
VDS
VGS (V)
16
VDD = 25 V
10 V
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
20
VGS
30
30
20
Reverse Drain Current vs.
Source to Drain Voltage
ID = 38 A
40
10
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
50
VGS = 0
f = 1 MHz
RJK0358DPA
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 2.78°C/W, Tc = 25°C
0.1
0.05
0
0.03
.02
se
ul
p
1
0.0 hot
s
1
0.01
10 µ
D=
PDM
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
EAR =
L
VDS
Monitor
1
L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
50 Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
10%
VDS
= 10 V
90%
td(on)
REJ03G1651-0400 Rev.4.00 Apr 10, 2008
Page 5 of 6
tr
90%
td(off)
tf
RJK0358DPA
Package Dimensions
JEITA Package Code
−
RENESAS Code
PWSN0008DA-A
Previous Code
WPAKV
MASS[Typ.]
0.075g
0.8Max
5.1 ± 0.2
Unit: mm
0.5 ± 0.15
Package Name
WPAK
4.21Typ
1.27Typ
+0.1
-0.2
5.9
3.8 ± 0.2
+0.1
-0.3
6.1
3.9 ± 0.2
0.05Max
0Min
Stand-off
1.27Typ
0.2Typ
0.5 ± 0.15
0.635Max
0.7Typ
0.04Min
0.4 ± 0.06
4.9 ± 0.1
(Ni/Pd/Au plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Part No.
RJK0358DPA-00-J0
Quantity
2500 pcs
REJ03G1651-0400 Rev.4.00 Apr 10, 2008
Page 6 of 6
Shipping Container
Taping
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.2