High Frequency FETs 3SK241 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 ■ Features ● Low noise-figure (NF) ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. VG1S −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current IG1 1 mA Gate 2 current IG2 1 mA Allowable power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 0.95 +0.1 0.4 –0.05 1.9±0.2 2 0.95 2.9±0.2 3 +0.1 Gate 1 to Source voltage 1 0.16 –0.06 V 4 0.4±0.2 0 to 0.1 13 0.65±0.15 0.8 Symbol +0.2 Unit VDS 1.1 –0.1 Ratings Drain to Source voltage 1.5 –0.3 0.5R ■ Absolute Maximum Ratings (Ta = 25°C) Parameter +0.2 0.65±0.15 1: Source 2: Drain 3: Gate2 4: Gate1 Mini Type Package (4-pin) Marking Symbol: DU ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Conditions max Unit 35 mA VG2D = −13V (G1, S = Open) 50 µA VDS = VG2S = 0, VG1S = −6V −20 µA IG2SS VDS = VG1S = 0, VG2S = −6V −20 µA IDSX VDS = 13V, VG1S = −3.5V, VG2S = 0 50 µA Gate 1 to Source cut-off voltage VG1SC VDS = 5V, VG2S = 0, ID = 200µA −3.5 V Gate 2 to Source cut-off voltage VG2SC VDS = 5V, VG1S = 0, ID = 200µA −3.5 V Forward transfer admittance | Yfs | VDS = 5V, ID = 10mA, VG2S = 1.5V, f = 1kHz Drain to Source cut-off current IDSS VDS = 5V, VG1S = 0, VG2S = 0 Gate 2 to Drain current IG2DO Gate 1 cut-off current IG1SS Gate 2 cut-off current Drain cut-off current Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss Reverse transfer capacitance (Common Source) Crss min 18 f = 1MHz PG VDS = 5V, ID = 10mA Noise figure NF VG2S = 1.5V, f = 800MHz Gain reduction GR VDS = 5V, VAGC = 1.5V/−3.5V, f = 800MHz 23 0.4 VDS = 5V, VG1S = VG2S = −6V Power gain typ 8.5 13 pF 0.3 1.2 pF 0.02 0.04 pF 19 1.5 37 mS 2 45 dB 2.5 dB dB 1 High Frequency FETs 3SK241 PD Ta ID VDS 36 48 VG2S=0 Ta=25˚C 350 250 200 150 100 40 VG1S=0V 24 – 0.3V 18 – 0.6V 12 – 0.9V 6 VG2S=1.0V 32 0.5V 24 0V 16 – 0.5V 8 –1.0V 50 –1.2V 0 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 6 8 ID VG2S 40 32 VG1S=1.0V 0.5V 0V 16 – 0.5V 8 – 1.0V –1.6 –1.2 – 0.8 – 0.4 Forward transfer admittance |Yfs| (mS) VDS=5V Ta=25˚C –2.0 VG2S=1.5V 16 1.0V 0.5V 8 0V –2 –1 0 1 PG VG1S VG2S=1.5V 2 3 Ciss 0.4 0.3 Coss 0.2 0.1 0 0.1 0.3 12 1.0V 8 0.5V Noise figure NF (dB) 16 3 10 30 100 PG VG2S 60 VDS=5V f=800MHz Ta=25˚C 40 VG2S=1.5V 8 1 Drain to source voltage VDS (V) VDS=5V f=800MHz Ta=25˚C 10 4 VG1S=VG2S=–6V f=1MHz Ta=25˚C NF VG1S 12 –1.2 – 0.8 – 0.4 0.5 Gate 1 to source voltage VG1S (V) 24 –1.6 Ciss, Coss VDS 32 24 –2.0 Gate 1 to source voltage VG1S (V) 0.6 VDS=5V f=1kHz Ta=25˚C 40 0 –3 0 Gate 2 to source voltage VG2S (V) 20 0 –2.4 12 | Yfs | VG1S 48 24 10 Drain to source voltage VDS (V) 48 0 –2.4 4 Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) 20 1.0V 6 0.5V 4 0V Power gain PG (dB) 0 Drain current ID (mA) Drain current ID (mA) 300 0 Power gain PG (dB) VDS=5V Ta=25˚C 30 Drain current ID (mA) Allowable power dissipation PD (mW) 400 ID VG1S 20 0 –20 0V 4 0 –1.6 2 VDS=5V f=800MHz Ta=25˚C –1.2 – 0.8 – 0.4 0 0.4 0.8 Gate 1 to source voltage VG1S (V) 2 0 –1.6 –40 –1.2 – 0.8 – 0.4 0 0.4 0.8 Gate 1 to source voltage VG1S (V) –60 –6 –4 –2 0 2 4 6 Gate 2 to source voltage VG2S (V) High Frequency FETs 3SK241 ID VG1S 30 VDS=5V VG2S=0 Drain current ID (mA) 24 18 12 Ta=25˚C 75˚C –25˚C –1.2 – 0.8 6 0 –2.0 –1.6 – 0.4 0 Gate 1 to source voltage VG1S (V) 3