ANALOGICTECH AAT8401IGY-T1

AAT8401
20V P-Channel Power MOSFET
General Description
Features
The AAT8401 is a low threshold MOSFET designed
for the battery, cell phone, and PDA markets. Using
AnalogicTech™’s ultra high density proprietary
TrenchDMOS™ technology, this product demonstrates high power handling and small size.
•
•
•
Applications
SC59 Package
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
Top View
D
3
1
G
Absolute Maximum Ratings
Symbol
VDS
VGS
2
S
(TA=25°C unless otherwise noted)
Description
Value
Drain-Source Voltage
Gate-Source Voltage
TA = 25°C
TA = 70°C
ID
Continuous Drain Current @ TJ=150°C
IDM
IS
Pulsed Drain Current 2
Continuous Source Current (Source-Drain Diode)
PD
Maximum Power Dissipation
TJ, TSTG
Preliminary Information
•
•
•
VDS(MAX) = -20V
ID(MAX) 1 = -2.4A @ 25°C
Low RDS(ON):
• 100 mΩ @ VGS = -4.5V
• 175 mΩ @ VGS = -2.5V
1
1
TA = 25°C
TA = 70°C
1
Operating Junction and Storage Temperature Range
Units
-20
±12
±2.4
±2.0
±9
-0.9
1.0
0.6
-55 to 150
°C
Value
Units
145
125
50
°C/W
°C/W
°C/W
V
A
W
Thermal Characteristics
Symbol
RθJA
RθJA2
RθJF
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Description
Typical Junction-to-Ambient steady state 1
Maximum Junction-to-Ambient t<5 seconds
Typical Junction-to-Foot 1
1
1
AAT8401
20V P-Channel Power MOSFET
Electrical Characteristics
Symbol
(TJ=25°C unless otherwise noted)
Description
DC Characteristics
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Drain-Source ON-Resistance
ID(ON)
VGS(th)
IGSS
On-State Drain Current 2
Gate Threshold Voltage
Gate-Body Leakage Current
IDSS
2
Drain Source Leakage Current
gfs
Forward Transconductance 2
Dynamic Characteristics 3
QG
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain Charge
tD(ON)
Turn-ON Delay
tR
Turn-ON Rise Time
tD(OFF)
Turn-OFF Delay
tF
Turn-OFF Fall Time
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage
IS
Continuous Diode Current 1
Conditions
Min
VGS=0V, ID=-250µA
VGS=-4.5V, ID=-2.4A
VGS=-2.5V, ID=-1.8A
VGS=-4.5V, VDS=-5V (Pulsed)
VGS=VDS, ID=-250µA
VGS=±12V, VDS=0V
VGS=0V, VDS=-20V
VGS=0V, VDS=-16V, TJ=70°C 3
VDS=-5V, ID=-2.4A
-20
VDS=-15V,
VDS=-15V,
VDS=-15V,
VDS=-15V,
VDS=-15V,
VDS=-15V,
VDS=-15V,
2
RD=5.6Ω,
RD=5.6Ω,
RD=5.6Ω,
RD=5.6Ω,
RD=5.6Ω,
RD=5.6Ω,
RD=5.6Ω,
VGS=0, IS=-2.4A
VGS=-4.5V
VGS=-4.5V
VGS=-4.5V
VGS=-4.5V,
VGS=-4.5V,
VGS=-4.5V,
VGS=-4.5V,
Typ
Max
V
88
146
100
175
-9
-0.6
±100
-1
-5
4
RG=6Ω
RG=6Ω
RG=6Ω
RG=6Ω
Units
mΩ
A
V
nA
µA
S
4
0.6
1.4
6.5
13
15
20
nC
ns
-1.3
-0.9
V
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse
on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design, however RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 µs
Note 3: Guaranteed by design. Not subject to production testing.
2
8401.2003.06.0.61
AAT8401
20V P-Channel Power MOSFET
Typical Characteristics
Transfer Characteristics
Output Characteristics
9
4V
5V
8
4.5V
7
VD = VG
8
3.5V
2.5V
25°C
6
ID (A)
5
4
3
5
4
2V
3
1.5V
1
2
2
1
0
0
0
0
1
2
1
2
5
4
VGS (V)
On-Resistance vs. Drain Current
On-Resistance vs. Gate to Source Voltage
300
300
ID = 2.7A
250
200
RDS(ON) (mΩ)
250
RDS(ON) (mΩ
Ω)
3
3
VDS (V)
VGS = 2.5V
150
100
VGS = 4.5V
50
200
150
100
50
0
0
0
2
4
6
0
8
1
2
On-Resistance vs. Junction Temperature
1.4
5
0.4
VGS = 4.5V
ID = 2.7A
1.2
1.0
0.8
0.6
-50
4
Threshold Voltage
VGS(th) Variance (V)
1.6
3
VGS (V)
ID (A)
Normalized RDS(ON)
125°C
-55°C
7
6
IDS (A)
9
3V
ID = 250µA
0.3
0.2
0.1
0.0
-0.1
-0.2
-25
0
25
50
TJ (°C)
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75
100
125
150
-50
-25
0
25
50
75
100
125
150
TJ (°C)
3
AAT8401
20V P-Channel Power MOSFET
Typical Characteristics
Gate Charge
5
10
VD = 15V
ID = 2.7A
4
TJ = 150°C
3
IS (A)
VGS (V)
Source-Drain Diode Forward Voltage
2
1
TJ = 25°C
1
0
0
1
2
3
4
0.1
5
0
0.2
0.4
QG, Charge (nC)
0.6
0.8
1
1.2
VSD (V)
Capacitance
Single Pulse Power, Junction to Ambient
30
750
Ciss
Power (W)
Capacitance (pF)
25
600
450
300
Coss
Crss
20
15
10
150
5
0
0.001
0
0
-5
-10
-15
-20
0.01
0.1
1
10
100
1000
Time (s)
VDS (V)
Normalized Effective
Transient Thermal Impedance
Transient Thermal Response, Junction to Ambient
10
1
0.1
0.2
0.5
0.1
Single Pulse
.05
0.01
0.0001
0.001
.02
0.01
0.1
1
10
100
1000
Time (s)
4
8401.2003.06.0.61
AAT8401
20V P-Channel Power MOSFET
Ordering Information
Package
Marking1
Part Number (Tape and Reel)
SC59
IGXYY
AAT8401IGY-T1
Note: Sample stock is generally held on all part numbers listed in BOLD.
Note 1: XYY = assembly and date code.
Package Information
SC59
2.80 ± 0.20
1.575 ± 0.125
2.85 ± 0.15
0.95 BSC
8401.2003.06.0.61
0.40 ± 0.10 × 3
0.45 ± 0.15
0.14 ± 0.06
4° ± 4°
1.20 ± 0.30
0.075 ± 0.075
1.90 BSC
5
AAT8401
20V P-Channel Power MOSFET
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
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