THYRISTOR MODULE AK90HB120/160 UL;E76102 （M） Power ThyristorModule AK90HB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 1,600V are available. 93.5max （Applications） AC/DC motor drives Heater controls Light dimmers Static switches 80 2-φ6.5 2 1 K2 G2 3 K1 G1 13 26max Isolated mounting base ● IT（AV）90A, IT（RMS）200A, ITSM 1100A ● di/dt 200 A/μs ● dv/dt 500V/μs 16.5 23 23 3-M5 110TAB G2 K2 21 30max Internal Configurations A2･K1 3 1 A1K2 K1 G1 2 Unit：A ■Maximum Ratings （Tj＝25℃ unless otherwise specified） Symbol Item VDRM Repetitive Peak Off-State Voltage Symbol IT（AV） Ratings AK90GB120 1200 Item Conditions Single phase, half wave, 180°conduction, Tc：88℃ IT（RMS） R.M.S. On-State Current Tc：88℃ ITSM Surge On-State Current 1／cycle, 2 It Value for one cycle of surge current It 2 V Ratings Average On-State Current 2 Unit AK90GB160 1600 50Hz/60Hz, peak value, non-reqetitive Unit 90 A 200 A 1650/1800 15000 A A2S PGM Peak Gate Power Dissipation 10 W PG（AV） Average Gate Power Dissipation 3 W IFGM Peak Gate Current 3 A VFGM Peak Gate Voltage（Forward） 10 V VRGM Peak Gate Voltage（Reverse） 5 V di/dt VISO Critical Rate of Rise of On-State Current IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs Isolation Breakdown Voltage（R.M.S.） A.C. 1 minute 2500 V Tj Operating Junction Temperature −40 to ＋125 ℃ Storage Temperature Tstg Mounting Torque 200 A/μs −40 to ＋125 ℃ Mounting（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） Terminal（M5） 2.7（28） N･ｍ （㎏f･B） 170 g Ratings Unit Mass Recommended Value 1.5-2.5（15-25） Typical Value ■Electrical Characteristics Symbol Item Conditions IDRM Repetitive Peak Off-State Current, max. at VDRM, Single phase, half wave, Tj＝125℃ VTM Peak On-State Voltage, max. On-State Current 270A, Tj＝125℃ Inst. measurement IGT/VGT VGD Gate Trigger Current/Voltage, max. Non-Trigger Gate, Voltage. min. Tj＝25℃，IT＝1A，VD＝6V Turn On Time, max. IT＝90A，IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝0.1A/μs Critical Rate of Rise of Off-State Voltage, min. Tj＝125℃，VD＝2／3VDRM，Exponential Holding Current, typ. Tj＝25℃ Lutching Current, typ. tgt dv/dt IH IL Rth（j-c） Thermal Impedance, max. SanRex Tj＝125℃，VD＝1／2VDRM 30 mA 1.40 V 100/2 0.25 mA/V V 10 μs 500 V/μs 50 mA Tj＝25℃ 100 mA Junction to case, per 1／2 Module 0.30 Junction to case, per 1 Module 0.15 wave. ℃/W ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] AK90HB120/160 Gate Characteristics ２ ２ １００ ５ 25℃ 125℃ −30℃ ２ Maximum Gate Voltage that will not trigger any unit（0.25V） On-State Current（A） ５ P Po eak we Ga （ t r 10 e W Ga ） te Po we （ r 3W ） Peak Gate Current（3A） Peak Forward Gate Voltag（10V） Av er ag e １０１ ２ １０２ ５ ２ ５ １０３ Tj＝125℃ １０２ ５ ２ １０１ ５ ー１ １０ １０１ ２ ２ ２ ５ １． ０ Gate Current（mA） Average On-State Current Vs Power Dissipation （Single phase half wave） １４０ Allowable Case Temperature（℃） ２００ Power Dissipation（W） Per one element Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） Per one element 2 。 360 １００ θ＝180゜ θ＝120゜ θ＝90゜ θ＝60゜ θ＝30゜ １００ 2 ５０ 。 360 : Conduction Angle ０ ２０ ４０ : Conduction Angle ８０ ６０ θ＝30゜ θ＝90゜ ２０ ０ Transient Thermal Impedance θj-c（℃/W） Surge On-State Current Rating （Non-Repetitive） ４０ ６０ ８０ １００ １２０ １４０ １６０ １８０ ２００ Transient Thermal Impedance ０． ４ ２０００ Per one element Tj＝25℃ start ０． ３ １５００ 60Hz １００ ２ ５ １０１ Junction to Case Per one element ０． ２ １０００ 50Hz ０． １ ４００ ０ １ ２ ５ １０ ２０ ５０ １００ Output Current Conduction Angle 180° W3 W１；Bidirectional connection ld(Ar.m.s) Id（RMS） ６００ Rth:0.8C/W Rth:0.6C/W Rth:0.4C/W Rth:0.2C/W Rth:0.1C/W ４５０ ３００ W1 ９０ １００ １５０ ０ ０ ５０ １００１５０２００２５０３００ Output Current（A） １１０ １２０ １２５ ０ ２５ ５０ ７５ １００１２５ Ambient Temperature（℃） Allowable Case Temperature（℃） Time（cycles） Total Power Dissipation（W） ２０ Average On-State Current（A） Average On-State Current（A） ７５０ D.C. θ＝180゜ θ＝60゜ θ＝120゜ ４０ ８０ １００ １２０ １４０ １６０ １８０ ２００ ６０ ２． ０ １２０ D.C. １５０ Surge On-State Current（A） １． ５ On-State Voltage（V） ０ ２ ５ １０ー３ ２ ５ １０ー２ ２ ５ １０ー１ ２ Time t（sec） Ｗ３；Three phase bidiretional connection ５ １００ RMS On-State Current Vs Allowable Case Temperature Rth:0.8C/W Rth:0.6C/W Rth:0.4C/W Rth:0.2C/W Rth:0.1C/W １００ Id（Ar.m.s.） １３０ １２０ １１０ θ＝30゜ θ＝60゜１ ００ θ＝90゜ θ＝120゜ ９０ θ＝180゜ １１０ ８０ ７０ ６０ １２０ １２５ ０ ２５ ５０ ７５ １００１２５ Ambient Temperature（℃） ０２０ ６０ １００ １４０ １８０ ２２０ RMS On-State Current（A） ５０ Allowable Case Temperature（℃） Gate Voltage（V） On-State Voltage max ５