AO4726 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4726/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. AO4726 and AO4726L are electrically identical. -RoHS Compliant -AO4726L is Halogen Free VDS (V) = 30V ID =18A (VGS = 10V) RDS(ON) < 6mΩ (VGS = 10V) RDS(ON) < 7mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D D D D D S S S G SRFET TM G Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF TA=25°C TA=70°C Pulsed Drain Current Avalanche Current B B Repetitive avalanche energy L=0.3mH B TA=25°C Power Dissipation 14 IAR 42 EAR 265 TJ, TSTG Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Alpha & Omega Semiconductor, Ltd. RθJA RθJL V ±12 18 80 Junction and Storage Temperature Range Maximum Junction-to-Ambient A 30 IDSM IDM A mJ 3.1 PDSM TA=70°C Units Maximum W 2.0 -55 to 150 Typ 32 60 17 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4726 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, V GS=0V VDS=30V, V GS=0V 30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.4 VGS=10V, V DS=5V 80 1.75 2.3 V 4.5 6 7 9 VGS=4.5V, ID=17A 5.3 7 VDS=5V, ID=18A 90 gFS Forward Transconductance VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge mA nA Static Drain-Source On-Resistance Crss 10 ±100 RDS(ON) Output Capacitance Units V TJ=125°C VGS=10V, ID=18A Coss Max 0.1 IDSS IS Typ A mΩ S 0.36 3940 mΩ 0.5 V 5.5 A 5120 pF VGS=0V, VDS=15V, f=1MHz 590 VGS=0V, VDS=0V, f=1MHz 0.72 1.1 Ω 72.8 95 nC pF 255 VGS=10V, V DS=15V, ID=18A pF nC 35.0 10.4 nC Qgd Gate Drain Charge 12.4 nC tD(on) Turn-On DelayTime 9.8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=18A, dI/dt=300A/µs 36 Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=300A/µs 32 VGS=10V, V DS=15V, R L=0.83Ω, RGEN=3Ω 8.4 ns 45 ns 10 ns 43 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. ±12 B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev2: May 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4726 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 30 VGS=10V VDS=5V 25 60 40 ID(A) ID (A) 20 VGS=3V 15 10 20 125° VGS=2.5V 0 0 0 DYNAMIC 1 2 3 4 1 5 1.5 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 8 2 VGS=4.5V 5 VGS=10V 4 ID=18A VGS=10V 1.8 Normalized On-Resistance 7 RDS(ON) (mΩ) 25°C 5 1.6 1.4 ID=17A 1.2 VGS=4.5V 1 2 0 5 10 15 20 25 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ±12 14 1.0E+02 ID=18A 1.0E+01 125°C 1.0E+00 10 IS (A) RDS(ON) (mΩ) 12 125°C 8 6 25°C 1.0E-01 1.0E-02 1.0E-03 4 1.0E-04 25°C 1.0E-05 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4726 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6000 10 VDS=15V ID=18A 5000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 4000 3000 2000 2 0 0 0 10 20 30 40 50 60 70 80 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10 15 20 25 30 100 100.0 TJ(Max)=150°C TA=25°C 80 RDS(ON) limited 10µs 100µ 1ms 10ms 0.1s 1s 10s 1.0 TJ(Max)=150°C TA=25°C 0.1 0.0 0.01 0.1 DC 1 VDS (Volts) 10 Power (W) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics DYNAMIC PARAMETERS ID (Amps) Crss Coss 1000 60 40 20 0 0.0001 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ±12 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 PD Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com